CG2H40045 RF Power GaN HEMT

By Wolfspeed 82

CG2H40045 RF Power GaN HEMT

Cree Wolfspeed’s CG2H40045 is a gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 V rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CG2H40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

Features Applications
  • Up to 4 GHz operation
  • 18 dB small signal gain at 2.0 GHz
  • 14 dB small signal gain at 4.0 GHz
  • 55 W typical PSAT
  • 60% efficiency at PSAT
  • 28 V operation
  • 2-way private radios
  • Broadband amplifiers
  • Cellular infrastructure
  • Test instrumentation
  • Class A and AB linear amplifiers suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms

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