CGH27015 Gallium-Nitride (GaN) High-Electron-Mobil

By Wolfspeed 58

CGH27015 Gallium-Nitride (GaN) High-Electron-Mobil

Wolfspeed's CGH27015 is a GaN HEMT designed specifically for high-efficiency, high-gain, and wide bandwidth capabilities, which makes it ideal for VHF communications, 3G, 4G, LTE, and 2.3 GHz to 2.9 GHz BWA amplifier applications. The unmatched transistor is available in a screw-down flange package.

Cree Wolfspeed Solder Mounted Packaged Transistors 

Cree Wolfspeed Review of GaN on SiC HEMP and MMICs

Access large signal models for Keysight's ADS and National Instruments AWR MWO

Features Applications
  • VHF: 3.0 GHz operation
  • 30 W peak power capability
  • 15 dB small signal gain
  • 4.0 W PAVE at < 2.0% EVM
  • 28% drain efficiency at 4 W average power
  • WiMAX fixed access 802.16-2004 OFDM
  • WiMAX mobile access 802.16e OFDMA
  • Amplifier applications:
    • VHF communications
    • 3G
    • 4G
    • LTE
    • 2.3 GHz to 2.9 GHz BWA

類別

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