TSC's 40 V and 60 V N-Channel MOSFET families feature a junction temperature rated to 175°C suited for high-temperature environment applications. These devices offer logic or standard gate threshold voltage levels and a wide range of drain-source on-state resistance (R_DS(ON)) levels for flexible and robust power switching designs. Gate-drain charge/gate-source charge (Q_gd/Q_gs) and the reverse recovery charge (Q_rr) parameters have been optimized to improve figure of merit and reduce EMI, and offer higher surge current capability during cold load start-up and in-rush. The MOSFETs are packaged in a small form factor PDFN56 package for improved power density in application.