Silicon Carbide (SiC) 650 V Schottky Diodes – LSIC

By Littelfuse Inc 67

Silicon Carbide (SiC) 650 V Schottky Diodes – LSIC

Littelfuse's 650 V TO-220-2L GEN2 SiC Schottky barrier diode series of silicon carbide (SiC) Schottky diodes have negligible reverse recovery current, high surge capability, and maximum operating junction temperature of +175°C. These diodes are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Compared to standard silicon bipolar power diodes, GEN2 SiC Schottky diodes dramatically reduce switching losses and enable substantial increases in the efficiency and robustness of power electronics systems.

Features and Benefits
  • AEC-Q101 qualified
  • Dramatically reduced switching losses compared to Si bipolar diodes
  • Extremely fast, temperature-independent switching behavior
  • Positive temperature coefficient for safe operation and ease of paralleling
  • +175°C maximum operating junction temperature
  • Excellent surge capability
  • Exceptional performance in demanding applications
  • Suitable for high-frequency power switching
  • Negligible switching losses
  • Reduced stress on the opposing switch
  • Larger design margin and relaxed thermal management requirements
  • Enhanced surge capability and extremely low leakage

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