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SIZ710DT-T1-GE3

SIZ710DT-T1-GE3
Mfr. #:
SIZ710DT-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
生命週期:
製造商新產品
數據表:
SIZ710DT-T1-GE3 數據表
交貨:
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支付:
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HTML Datasheet:
SIZ710DT-T1-GE3 DatasheetSIZ710DT-T1-GE3 Datasheet (P4-P6)SIZ710DT-T1-GE3 Datasheet (P7-P9)SIZ710DT-T1-GE3 Datasheet (P10-P12)SIZ710DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
更多信息:
SIZ710DT-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
E
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAIR-6x3.7-8
通道數：
2 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
20 V
Id - 連續漏極電流：
16 A, 35 A
Rds On - 漏源電阻：
6.8 mOhms, 3.3 mOhms
Vgs th - 柵源閾值電壓：
1 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
18 nC, 60 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
27 W, 48 W
配置：
雙重的
頻道模式：
增強
商品名：
溝槽場效應晶體管
打包：
捲軸
系列：
工業區
晶體管類型：
2 N-Channel
品牌：
威世 / Siliconix
正向跨導 - 最小值：
45 S, 85 S
秋季時間：
12 ns, 12 ns
產品類別：
MOSFET
上升時間：
15 ns, 15 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
20 ns, 30 ns
典型的開啟延遲時間：
15 ns, 25 ns
第 # 部分別名：
SIZ710DT-GE3
Tags
SIZ710DT-T, SIZ71, SIZ7, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 20 V 0.0068 Ohm Surface Mount Power MosFet - PowerPAIR 6 x 3.7 mm
***et Europe
Transistor MOSFET Array Dual N-CH 20V 16A/35A 6-Pin PowerPAIR T/R
***ark
MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:35A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.0068ohm; Rds(on) Test Voltage Vgs:10V
***ment14 APAC
MOSFET,NN CH,HALF BR,DIO,20V,PPAIR6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:4.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAIR; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):5500µohm; Power Dissipation Pd:4.6W
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
型號 製造商 描述 庫存 價格
SIZ710DT-T1-GE3
DISTI # V72:2272_09216120		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R
RoHS: Compliant		2000
  • 1000:$0.6544
  • 500:$0.7412
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 10:$1.0236
  • 1:$1.1931
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.6622
SIZ710DT-T1-GE3
DISTI # 30150542		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R
RoHS: Compliant		2000
  • 1000:$0.6544
  • 500:$0.7412
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 12:$1.0236
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 3000:$0.6596
  • 6000:$0.5074
  • 9000:$0.4039
  • 15000:$0.3412
  • 30000:$0.3141
  • 75000:$0.3044
  • 150000:$0.2954
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€1.2499
  • 6000:€0.8959
  • 12000:€0.7269
  • 18000:€0.6429
  • 30000:€0.6149
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.6249
  • 6000:$0.6069
  • 12000:$0.5819
  • 18000:$0.5659
  • 30000:$0.5509
SIZ710DT-T1-GE3
DISTI # 83T3536		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$1.5100
  • 25:$1.2400
  • 50:$1.1000
  • 100:$0.9510
  • 250:$0.8850
  • 500:$0.8180
  • 1000:$0.7190
SIZ710DT-T1-GE3
DISTI # 65T1676		Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V , RoHS Compliant: Yes0
  • 1:$0.6370
  • 3000:$0.6330
  • 6000:$0.6020
  • 12000:$0.5340
SIZ710DT-T1-GE3
DISTI # 781-SIZ710DT-T1-GE3		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
RoHS: Compliant		378
  • 1:$1.5100
  • 10:$1.2400
  • 100:$0.9510
  • 500:$0.8180
  • 1000:$0.7190
  • 3000:$0.7170
SIZ710DT-T1-GE3
DISTI # C1S803601344629		Vishay IntertechnologiesMOSFETs2000
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 10:$1.0236
SIZ710DT-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7Americas -
    SIZ710DT-T1-GE3
    DISTI # 2129099    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, 16A/35A, POWERPA
    RoHS: Compliant    		0
    • 3000:£0.6370
    圖片 型號 描述
    S1G-13-F

    Mfr.#: S1G-13-F

    OMO.#: OMO-S1G-13-F

    		 Rectifiers 400V 1A
    S1G-13-F

    Mfr.#: S1G-13-F

    OMO.#: OMO-S1G-13-F-DIODES

    		 DIODE GEN PURP 400V 1A SMA
    可用性
    庫存:
    Available
    訂購:
    5000
    輸入數量:
    SIZ710DT-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.50
    US$1.50
    10
    US$1.23
    US$12.30
    100
    US$0.95
    US$95.00
    500
    US$0.82
    US$408.50
    1000
    US$0.64
    US$644.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
    從...開始
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