VN2460N3-G-P014

Mfr. #:: VN2460N3-G-P014
製造商:: Microchip Technology
描述:: MOSFET N-CH Enhancmnt Mode MOSFET
生命週期:: 製造商新產品
數據表:: VN2460N3-G-P014 數據表
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更多信息:: VN2460N3-G-P014 更多信息 VN2460N3-G-P014 Product Details

產品屬性
屬性值

製造商：: 微芯片

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-92-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 160 mA

Rds On - 漏源電阻：: 25 Ohms

Vgs - 柵源電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 1 W

配置：: 單身的

頻道模式：: 增強

打包：: 彈藥包

高度：: 5.33 mm

長度：: 5.21 mm

產品：: MOSFET 小信號

晶體管類型：: 1 N-Channel

寬度：: 4.19 mm

品牌：: 微芯科技

秋季時間：: 20 ns

產品類別：: MOSFET

上升時間：: 10 ns

出廠包裝數量：: 2000

子類別：: MOSFET

典型關斷延遲時間：: 25 ns

典型的開啟延遲時間：: 10 ns

單位重量：: 0.016000 oz

Tags: VN2460N3-G, VN2460N3, VN2460N, VN246, VN24, VN2

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

VN2460N3-G-P014 描述

***ark: MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES

***ical: Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 Ammo

***(Formerly Allied Electronics): MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 Ohm3 TO-92 AMMO | Microchip Technology Inc. VN2460N3-G-P014

***rochip SCT: Enhancement-Mode N-Channel, 20Ω, 4V, TO-92-3, RoHS

*** Electronic Components: MOSFET N-CH Enhancmnt Mode MOSFET

***ure Electronics: P-Channel 60 V 14 Ohm Enhancement Mode Vertical DMOS FET - TO-92

***nsix Microsemi: Small Signal Field-Effect Transistor, 0.16A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***ment14 APAC: MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:160mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-160mA; Current Temperature:25°C; Device Marking:ZVP3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:1.6A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V

***ark: Mosfet, N-Ch, 240V, 0.16A, E-Line Rohs Compliant: Yes |Diodes Inc. ZVN0124A

***et: Trans MOSFET N-CH 240V 0.16A 3-Pin E-Line

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET, 240 V, RoHS

*** Stop Electro: Small Signal Field-Effect Transistors

***hard Electronics: P-channel MOSFET Transistor, -140 mA -100 V, 3-Pin TO-92

***ure Electronics: ZVP3310 Series P-Channel 100 V 140 mA 625 mW Vertical DMOS FET - TO-92

***ark: Mosfet, P-Ch, 100V, 0.14A, E-Line Rohs Compliant: Yes |Diodes Inc. ZVP3310A

***et Europe: Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo

***r Electronics: Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***p One Stop Global: Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo

***el Electronic: Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***icroelectronics: N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package

***et: Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo Pack

*** Electronic Components: MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET

***r Electronics: Small Signal Field-Effect Transistor

***el Electronic: CAP CER 2200PF 250V C0G RADIAL

Market price

型號	製造商	描述	庫存	價格
VN2460N3-G-P014 DISTI # V72:2272_06516013	Microchip Technology Inc	Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 T/R RoHS: Compliant	1986	75000:$0.7346 30000:$0.7426 15000:$0.7508 6000:$0.7590 3000:$0.7655 1000:$0.7738 500:$0.7822 250:$0.7906 100:$0.7991 50:$0.8710 25:$0.8806 10:$1.0158 1:$1.0405
VN2460N3-G-P014 DISTI # VN2460N3-G-P014-ND	Microchip Technology Inc	MOSFET N-CH 600V 0.16A TO92-3 RoHS: Compliant Min Qty: 2000 Container: Tape & Box (TB)	Temporarily Out of Stock	2000:$0.9270
VN2460N3-G-P014 DISTI # 25749296	Microchip Technology Inc	Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 T/R RoHS: Compliant	1986	1000:$0.7738 500:$0.7822 250:$0.7906 100:$0.7991 50:$0.8710 25:$0.8806 12:$1.0158
VN2460N3-G-P014 DISTI # 70483928	Microchip Technology Inc	MOSFET,N-CHANNEL ENHANCEMENT-MODE,600V,20 Ohm3 TO-92AMMO RoHS: Compliant	0	2000:$1.3600
VN2460N3-G-P014 DISTI # 689-VN2460N3-G-P014	Microchip Technology Inc	MOSFET N-CH Enhancmnt Mode MOSFET RoHS: Compliant	3957	1:$1.2300 10:$1.2100 25:$1.0200 100:$0.9270
VN2460N3-G-P014 DISTI # VN2460N3-G-P014	Microchip Technology Inc	MOSFETN-CHANNEL ENHANCEMENT-MODE600V20 Ohm RoHS: Compliant	0	1000:$0.7500 100:$0.9000 26:$0.9900 1:$1.1900
VN2460N3-G-P014 DISTI # C1S505201327120	Microchip Technology Inc	Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 T/R RoHS: Compliant	1986	100:$0.7991 50:$0.8710 25:$0.8806 10:$1.0158

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