 | | |
| PartNumber | SCT10N120 | SCT10N120H |
| Description | MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package | MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | SiC | SiC |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | HiP-247-3 | HiP247-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1.2 kV | 1200 V |
| Id Continuous Drain Current | 12 A | 12 A |
| Rds On Drain Source Resistance | 500 mOhms | 690 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.8 V | 1.8 V |
| Vgs Gate Source Voltage | 25 V | - 10 V to 25 V |
| Qg Gate Charge | 22 nC | 22 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 200 C | + 200 C |
| Pd Power Dissipation | 150 W | 150 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | HiP247â?¢ | - |
| Packaging | Tube | - |
| Series | SCT10N120 | SCT10N120H |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 17 ns | 17 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 12 ns | 12 ns |
| Factory Pack Quantity | 600 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 14 ns |
| Typical Turn On Delay Time | 7 ns | 7 ns |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
SCT10N120 | MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package | |
| SCT10N120H | MOSFET | ||
| SCT10N120H | - Tape and Reel (Alt: SCT10N120H) | ||
| SCT10N120 | MOSFET N-CH 1.2KV TO247-3 | ||
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TE Connectivity |
SCT-NO.1-E6-0-50MM | Heat Shrink Tubing ST Polyolefin Black Loose Piece | |
| SCT-NO.4-E2-0-75MM | Heat Shrink Tubing ST Polyolefin Black Piece | ||
TDK-Lambda |
SCT120P030512 | 3.3V8.0A 5V10A 12V2A |