FDAF59N30

FDAF59N30
Mfr. #:
FDAF59N30
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 300V 34A NCH MOSFET
生命週期:
製造商新產品
數據表:
FDAF59N30 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-3PN-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
300 V
Id - 連續漏極電流:
34 A
Rds On - 漏源電阻:
56 mOhms
Vgs - 柵源電壓:
30 V
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
161 W
配置:
單身的
頻道模式:
增強
打包:
管子
高度:
20.1 mm
長度:
16.2 mm
晶體管類型:
1 N-Channel
類型:
功率MOSFET
寬度:
5 mm
品牌:
安森美半導體/飛兆半導體
正向跨導 - 最小值:
52 S
秋季時間:
200 ns
產品類別:
MOSFET
上升時間:
575 ns
出廠包裝數量:
30
子類別:
MOSFET
典型關斷延遲時間:
120 ns
典型的開啟延遲時間:
140 ns
單位重量:
0.000194 oz
Tags
FDAF, FDA
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
MOSFETs 300V,34A, NCH MOSFET
***i-Key
MOSFET N-CH 300V 34A TO-3PF
***ark
MOSFET, N, TO-3PF; Transistor type:Enhancement; Voltage, Vds typ:300V; Current, Id cont:34A; Resistance, Rds on:0.056ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-3PF; Current, Idm pulse:136A; Pins, RoHS Compliant: Yes
***nell
MOSFET, N, TO-3PF; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:300V; Current, Id Cont:34A; Resistance, Rds On:0.056ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3PF; Termination Type:Through Hole; Current, Idm Pulse:136A; Pins, No. of:3; Power Dissipation:161W; Voltage, Vds Max:300V; Voltage, Vgs th Max:5V
型號 製造商 描述 庫存 價格
FDAF59N30
DISTI # FDAF59N30-ND
ON SemiconductorMOSFET N-CH 300V 34A TO-3PF
RoHS: Compliant
Min Qty: 360
Container: Tube
Limited Supply - Call
    FDAF59N30
    DISTI # 512-FDAF59N30
    ON SemiconductorMOSFET 300V 34A NCH MOSFET
    RoHS: Compliant
    0
      FDAF59N30Fairchild Semiconductor CorporationPower Field-Effect Transistor, 34A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      3257
      • 1000:$2.4200
      • 500:$2.5500
      • 100:$2.6500
      • 25:$2.7700
      • 1:$2.9800
      FDAF59N30Fairchild Semiconductor CorporationPower Field-Effect Transistor, 34A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      Europe - 480
        圖片 型號 描述
        FDAF75N28

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        OMO.#: OMO-FDAF75N28

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        FDAF62N28

        Mfr.#: FDAF62N28

        OMO.#: OMO-FDAF62N28

        MOSFET 280V 36A NCH MOSFET
        FDAF59N30

        Mfr.#: FDAF59N30

        OMO.#: OMO-FDAF59N30

        MOSFET 300V 34A NCH MOSFET
        FDAF59N30

        Mfr.#: FDAF59N30

        OMO.#: OMO-FDAF59N30-ON-SEMICONDUCTOR

        MOSFET N-CH 300V 34A TO-3PF
        FDAF62N28

        Mfr.#: FDAF62N28

        OMO.#: OMO-FDAF62N28-ON-SEMICONDUCTOR

        MOSFET N-CH 280V 36A TO-3PF
        FDAF69N25

        Mfr.#: FDAF69N25

        OMO.#: OMO-FDAF69N25-ON-SEMICONDUCTOR

        MOSFET N-CH 250V 34A TO-3PF
        FDAF75N28

        Mfr.#: FDAF75N28

        OMO.#: OMO-FDAF75N28-ON-SEMICONDUCTOR

        MOSFET N-CH 280V 46A TO-3PF
        可用性
        庫存:
        Available
        訂購:
        5000
        輸入數量:
        FDAF59N30的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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