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IPA65R065C7XKSA1

IPA65R065C7XKSA1
Mfr. #:
IPA65R065C7XKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER BEST IN CLASS
生命週期:
製造商新產品
數據表:
IPA65R065C7XKSA1 數據表
交貨:
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ECAD Model:
更多信息:
IPA65R065C7XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220FP-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
650 V
Id - 連續漏極電流：
15 A
Rds On - 漏源電阻：
58 mOhms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
64 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
34 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
管子
高度：
16.15 mm
長度：
10.65 mm
系列：
CoolMOS C7
晶體管類型：
1 N-Channel
寬度：
4.85 mm
品牌：
英飛凌科技
秋季時間：
7 ns
產品類別：
MOSFET
上升時間：
14 ns
出廠包裝數量：
500
子類別：
MOSFET
典型關斷延遲時間：
72 ns
典型的開啟延遲時間：
17 ns
第 # 部分別名：
IPA65R065C7 SP001080114
單位重量：
0.211644 oz
Tags
IPA65R0, IPA65R, IPA65, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.3pF 50volts C0G +/-0.05pF
*** Stop Electro
Power Field-Effect Transistor, 16A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***et Europe
Trans MOSFET N-CH 700V 18A 3-Pin TO-220 FP Tube
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***icroelectronics
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in TO-220FP package
***r Electronics
Power Field-Effect Transistor, 18A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 650V, 18A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***icroelectronics
N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 710 V 179 mOhm Flange Mount MDmesh™ V Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH Si 650V 17A 3-Pin(3+Tab) TO-220FP Tube
*** Electronics
STMICROELECTRONICS STF21N65M5 Power MOSFET, N Channel, 17 A, 650 V, 0.15 ohm, 10 V, 4 V
***ark
MOSFET, N CH, 650V, 17A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
E Series N Channel 650 V 380 mO 70 nC Flange Mount Power Mosfet - TO-220FP
***et
Trans MOSFET N-CH 650V 12A 3-Pin TO-220 Full-Pak
*** Electronics
MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS
***et
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220
***or
N-CHANNEL POWER MOSFET
***icroelectronics
N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package
***r Electronics
Power Field-Effect Transistor, 49A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 650 V 62 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247
***el Electronic
PowerPC e300c3 Microprocessor IC MPC83xx 1 Core, 32-Bit 200MHz 369-PBGA (19x19)
***icroelectronics
Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
***ure Electronics
STB43N65M5 Series 650 V 63 mOhm 42 A N-Channel MDmesh™ M5 Power MOSFET - D²PAK-3
***ical
Trans MOSFET N-CH 650V 42A Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 42A I(D), 650V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 650V, 42A, TO263; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in TO-247 package
***ure Electronics
STW57N65M5 Series 710 V 0.063 Ohm 42 A N-Channel MDmesh™ V Power Mosfet - TO-247
***ark
MOSFET, N-CH, 650V, 42A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***et
Transistor MOSFET N-Channel 650V 33A 3-Pin TO-247 Tube
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
Mosfet, N-Ch, 650V, 33A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***ical
Trans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube
***nell
MOSFET, N-CH, 650V, 33A, 171W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 171W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-4, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***et
Transistor MOSFET N-Channel 650V 33A 3-Pin TO-220 Tube
***ark
Mosfet, N-Ch, 650V, 33A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
型號 製造商 描述 庫存 價格
IPA65R065C7XKSA1
DISTI # V36:1790_06378594		Infineon Technologies AGTrans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		0
    IPA65R065C7XKSA1
    DISTI # IPA65R065C7XKSA1-ND    		Infineon Technologies AGMOSFET N-CH 650V TO220-3
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Temporarily Out of Stock
    • 500:$5.2487
    IPA65R065C7XKSA1
    DISTI # IPA65R065C7XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 15A 3-Pin TO-220 Tube - Bulk (Alt: IPA65R065C7XKSA1)
    RoHS: Compliant
    Min Qty: 89
    Container: Bulk    		Americas - 0
    • 89:$3.9900
    • 178:$3.8900
    • 267:$3.6900
    • 445:$3.5900
    • 890:$3.4900
    IPA65R065C7XKSA1
    DISTI # IPA65R065C7XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 15A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPA65R065C7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 500:$4.3900
    • 1000:$4.1900
    • 2000:$4.0900
    • 3000:$3.8900
    • 5000:$3.8900
    IPA65R065C7
    DISTI # 726-IPA65R065C7    		Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS
    RoHS: Compliant    		0
    • 1:$7.3200
    • 10:$6.6100
    • 25:$6.3100
    • 100:$5.4800
    • 250:$5.2300
    • 500:$4.7700
    IPA65R065C7XKSA1
    DISTI # 726-IPA65R065C7XKSA1    		Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS0
    • 1:$7.3200
    • 10:$6.6100
    • 25:$6.3100
    • 100:$5.4800
    • 250:$5.2300
    • 500:$4.7700
    IPA65R065C7XKSA1Infineon Technologies AGPower Field-Effect Transistor, 19A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		27640
    • 1000:$3.7000
    • 500:$3.8900
    • 100:$4.0500
    • 25:$4.2300
    • 1:$4.5500
    IPA65R065C7XKSA1
    DISTI # IPA65R065C7    		Infineon Technologies AGN-Ch 650V 15A 34W 0,065R TO220-Fullpak
    RoHS: Compliant    		0
    • 1:€12.6000
    • 10:€6.6000
    • 50:€4.6000
    • 100:€4.2200
    圖片 型號 描述
    IPA65R065C7XKSA1

    Mfr.#: IPA65R065C7XKSA1

    OMO.#: OMO-IPA65R065C7XKSA1

    		 MOSFET HIGH POWER BEST IN CLASS
    IPA65R065C7

    Mfr.#: IPA65R065C7

    OMO.#: OMO-IPA65R065C7

    		 MOSFET HIGH POWER BEST IN CLASS
    IPA65R065C7

    Mfr.#: IPA65R065C7

    OMO.#: OMO-IPA65R065C7-1190

    		 MOSFET HIGH POWER BEST IN CLASS
    IPA65R065C7XKSA1

    Mfr.#: IPA65R065C7XKSA1

    OMO.#: OMO-IPA65R065C7XKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET HIGH POWER BEST IN CLASS
    可用性
    庫存:
    Available
    訂購:
    3500
    輸入數量:
    IPA65R065C7XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$7.32
    US$7.32
    10
    US$6.61
    US$66.10
    25
    US$6.31
    US$157.75
    100
    US$5.48
    US$548.00
    250
    US$5.23
    US$1 307.50
    500
    US$4.77
    US$2 385.00
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