NTTFS5116PLTWG

NTTFS5116PLTWG
Mfr. #:
NTTFS5116PLTWG
製造商:
ON Semiconductor
描述:
MOSFET PFET U8FL 60V
生命週期:
製造商新產品
數據表:
NTTFS5116PLTWG 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
NTTFS5116PLTWG DatasheetNTTFS5116PLTWG Datasheet (P4-P6)
ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
WDFN-8
通道數:
1 Channel
晶體管極性:
P-通道
Vds - 漏源擊穿電壓:
60 V
Id - 連續漏極電流:
5.7 A
Rds On - 漏源電阻:
72 mOhms
Vgs th - 柵源閾值電壓:
1 V
Vgs - 柵源電壓:
4.5 V
Qg - 門電荷:
25 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
40 W
配置:
單身的
頻道模式:
增強
打包:
捲軸
系列:
NTTFS5116PL
晶體管類型:
1 P-Channel
品牌:
安森美半導體
正向跨導 - 最小值:
11 S
秋季時間:
37 ns
產品類別:
MOSFET
上升時間:
58 ns
出廠包裝數量:
5000
子類別:
MOSFET
典型關斷延遲時間:
30 ns
典型的開啟延遲時間:
15 ns
Tags
NTTFS51, NTTFS5, NTTFS, NTTF, NTT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Power MOSFET -60V -20A 52 mOhm Single P-Channel u8FL Logic Level / REEL RoHS Compliant: Yes
***emi
Single P-Channel Power MOSFET -60V, -20A, 52mΩ
***Yang
Trans MOSFET P-CH 60V 5.7A 8-Pin WDFN - Tape and Reel
***roFlash
Power Field-Effect Transistor, 5.7A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
P-Channel owerTrench® MOSFET, -40V, -14A, 44mΩ
*** Source Electronics
Trans MOSFET P-CH Si 40V 6.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 6.7A DPAK
***ure Electronics
P-Channel 40 V 44 mOhm Surface Mount PowerTrench Mosfet TO-252-3
***sible Micro
XTR,PWR,MFT,FDD4243,DPK -40V,-14A,40mOHM,P-CHNL POWER MOSFET,D-PAK PKG
***roFlash
Power Field-Effect Transistor, 6.7A I(D), 40V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-40V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -14 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42
***ure Electronics
P-Channel 60 V 52 mOhm 3.2 W Surface Mount Power Mosfet - WDFN-8
***emi
Single P-Channel Power MOSFET -60V, -14A, 52mΩ
***nell
MOSFET, AEC-Q101, P-CH, -60V, WDFN; Transistor Polarity: P Channel; Continuous Drain Current Id: -14A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 21W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
P-Channel 60 V 14 A 52 mOhm Surface Mount Power Mosfet - WDFN-8 (3.3 x 3.3)
***emi
Single P-Channel Power MOSFET -60V, -14A, 52mΩ
***ment14 APAC
MOSFET, P-CH, -60V, -6A, WDFN-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Source Voltage Vds:-60V; On Resistance
***nell
MOSFET, P-CH, -60V, -6A, WDFN-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -6A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 3.2W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Si4447ADY Series 40 V 7.2 A 45 mOhm Surface Mount P-Channel Mosfet - SOIC-8
***roFlash
Small Signal Field-Effect Transistor, 7.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:4.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***ure Electronics
SiA441DJ Series 40 V 12 A Surface Mount P-Channel Mosfet - PowerPAK SC-70-6L
***et
Trans MOSFET P-CH 40V 6.6A 6-Pin PowerPAK SC-70 T/R
***roFlash
Power Field-Effect Transistor, 12A I(D), 40V, 0.047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***enic
PowerPAK SC-70-6 Single MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistors
***ure Electronics
Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
型號 製造商 描述 庫存 價格
NTTFS5116PLTWG
DISTI # 32333843
ON SemiconductorTrans MOSFET P-CH 60V 5.7A 8-Pin WDFN T/R
RoHS: Compliant
5000
  • 5000:$0.3176
NTTFS5116PLTWG
DISTI # NTTFS5116PLTWGOSCT-ND
ON SemiconductorMOSFET P-CH 60V 5.7A 8-WDFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
9940In Stock
  • 1000:$0.3916
  • 500:$0.4895
  • 100:$0.6608
  • 10:$0.8570
  • 1:$0.9800
NTTFS5116PLTWG
DISTI # NTTFS5116PLTWGOSDKR-ND
ON SemiconductorMOSFET P-CH 60V 5.7A 8-WDFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
9940In Stock
  • 1000:$0.3916
  • 500:$0.4895
  • 100:$0.6608
  • 10:$0.8570
  • 1:$0.9800
NTTFS5116PLTWG
DISTI # NTTFS5116PLTWGOSTR-ND
ON SemiconductorMOSFET P-CH 60V 5.7A 8-WDFN
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 25000:$0.3024
  • 10000:$0.3089
  • 5000:$0.3208
NTTFS5116PLTWG
DISTI # V36:1790_07311639
ON SemiconductorTrans MOSFET P-CH 60V 5.7A 8-Pin WDFN T/R
RoHS: Compliant
0
    NTTFS5116PLTWG
    DISTI # NTTFS5116PLTWG
    ON SemiconductorTrans MOSFET P-CH 60V 5.7A 8-Pin WDFN (Alt: NTTFS5116PLTWG)
    RoHS: Compliant
    Min Qty: 5000
    Europe - 0
    • 50000:€0.2729
    • 30000:€0.2939
    • 20000:€0.3189
    • 10000:€0.3479
    • 5000:€0.4249
    NTTFS5116PLTWG
    DISTI # NTTFS5116PLTWG
    ON SemiconductorTrans MOSFET P-CH 60V 5.7A 8-Pin WDFN - Tape and Reel (Alt: NTTFS5116PLTWG)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 50000:$0.2659
    • 30000:$0.2729
    • 20000:$0.2759
    • 10000:$0.2799
    • 5000:$0.2819
    NTTFS5116PLTWG
    DISTI # 24T3499
    ON SemiconductorPFET U8FL 60V 5.4A 52MOHM / REEL0
    • 10000:$0.2900
    • 5000:$0.2980
    • 1000:$0.3630
    • 500:$0.4230
    • 250:$0.4360
    • 100:$0.4490
    • 25:$0.6870
    • 1:$0.8790
    NTTFS5116PLTWG
    DISTI # 863-NTTFS5116PLTWG
    ON SemiconductorMOSFET PFET U8FL 60V
    RoHS: Compliant
    25885
    • 1:$0.8100
    • 10:$0.6700
    • 100:$0.4320
    • 1000:$0.3460
    • 5000:$0.2920
    • 10000:$0.2810
    • 25000:$0.2700
    圖片 型號 描述
    24LC256T-I/SN

    Mfr.#: 24LC256T-I/SN

    OMO.#: OMO-24LC256T-I-SN

    EEPROM 32kx8 - 2.5V
    REF3440IDBVR

    Mfr.#: REF3440IDBVR

    OMO.#: OMO-REF3440IDBVR

    Voltage References REF3440 - 6 PPM/C IQ 95UA 4V
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    OMO.#: OMO-LMR33630ADDAR

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    LT8364IDE#PBF

    Mfr.#: LT8364IDE#PBF

    OMO.#: OMO-LT8364IDE-PBF

    Switching Voltage Regulators Low IQ Boost/SEPIC/ Inverting Converter with 4A, 60V Switch
    TLV70212QDSERQ1

    Mfr.#: TLV70212QDSERQ1

    OMO.#: OMO-TLV70212QDSERQ1

    LDO Voltage Regulators LDO
    REF3440IDBVR

    Mfr.#: REF3440IDBVR

    OMO.#: OMO-REF3440IDBVR-TEXAS-INSTRUMENTS

    REF3440 - 6 PPM/C IQ 95UA 4.1V
    24LC256T-I/SN

    Mfr.#: 24LC256T-I/SN

    OMO.#: OMO-24LC256T-I-SN-MICROCHIP-TECHNOLOGY

    EEPROM 32kx8 - 2.5V
    2311765-1

    Mfr.#: 2311765-1

    OMO.#: OMO-2311765-1-TE-CONNECTIVITY

    CONN RCPT HD20 R/A 9P S/L .318
    LMR33630ADDAR

    Mfr.#: LMR33630ADDAR

    OMO.#: OMO-LMR33630ADDAR-TEXAS-INSTRUMENTS

    IC REG BUCK ADJUSTABLE 3A 8SOPWR
    TLV70212QDSERQ1

    Mfr.#: TLV70212QDSERQ1

    OMO.#: OMO-TLV70212QDSERQ1-TEXAS-INSTRUMENTS

    Low-Dropout Regulato
    可用性
    庫存:
    26
    訂購:
    2009
    輸入數量:
    NTTFS5116PLTWG的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$0.81
    US$0.81
    10
    US$0.67
    US$6.70
    100
    US$0.43
    US$43.20
    1000
    US$0.35
    US$346.00
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