FDMT800100DC

FDMT800100DC
Mfr. #:
FDMT800100DC
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET FET 100V 2.95 MOHM PQFN88
生命週期:
製造商新產品
數據表:
FDMT800100DC 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FDMT800100DC 更多信息
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
DualCool-88-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
100 V
Id - 連續漏極電流:
162 A
Rds On - 漏源電阻:
5.39 mOhms
Vgs th - 柵源閾值電壓:
2 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
79 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
156 W
配置:
單身的
頻道模式:
增強
商品名:
動力戰壕
打包:
捲軸
高度:
0.8 mm
長度:
3.3 mm
系列:
FDMT800100DC
晶體管類型:
1 N-channel
寬度:
3.3 mm
品牌:
安森美半導體/飛兆半導體
正向跨導 - 最小值:
66 S
秋季時間:
10 ns
產品類別:
MOSFET
上升時間:
18 ns
出廠包裝數量:
3000
子類別:
MOSFET
典型關斷延遲時間:
40 ns
典型的開啟延遲時間:
29 ns
單位重量:
0.008766 oz
Tags
FDMT8001, FDMT8, FDMT, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
PT5 100V/20V Nch Dual Cool PowerTrench MOSFET - 8LD, PQFN, NON-JEDEC, MV, 8.0X8.0 MM
***Semiconductor
N-Channel PowerTrench® MOSFET, Dual Cool™ 88, 100V, 162A, 2.95mΩ
***ical
Trans MOSFET N-CH Si 100V 24A 8-Pin QFN EP T/R
***et Europe
Trans MOSFET N-CH 100V 24A 8-Pin PQFN T/R
***et
PT5 100V/20V NCH DUAL COOL POWERTRENCH MOSFET
***ure Electronics
MOSFET N-CH 100V 24A
***i-Key
MOSFET P-CH 20V
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 162A, DUAL COOL 88; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:156W; Transistor Case Style:Dual Cool 88; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 100V 162A DOP. FREDDO 5688; Polarità Transistor:Canale N; Corrente Continua di Drain Id:162A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:156W; Modello Case Transistor:Dual Cool 88; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
FDMT8001x N-Channel Dual Cool™ PowerTrench MOSFET
ON Semiconductor FDMT8001x N-channel dual cool™ PowerTrench® MOSFETs combine Dual Cool™ and PowerTrench® processes to offer very low RDS(on) and maintain excellent switching performance. The FDMT8001x maintains extremely low junction to ambient resistance.Learn More
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
型號 製造商 描述 庫存 價格
FDMT800100DC
DISTI # FDMT800100DCCT-ND
ON SemiconductorMOSFET N-CH 100V 24A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1650In Stock
  • 1000:$3.8239
  • 500:$4.3904
  • 100:$5.2401
  • 10:$6.3730
  • 1:$7.0800
FDMT800100DC
DISTI # FDMT800100DCDKR-ND
ON SemiconductorMOSFET N-CH 100V 24A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1650In Stock
  • 1000:$3.8239
  • 500:$4.3904
  • 100:$5.2401
  • 10:$6.3730
  • 1:$7.0800
FDMT800100DC
DISTI # FDMT800100DCTR-ND
ON SemiconductorMOSFET N-CH 100V 24A
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$3.5750
FDMT800100DC
DISTI # FDMT800100DC
ON SemiconductorTrans MOSFET N-CH 100V 24A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMT800100DC)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$3.1900
  • 6000:$3.1900
  • 12000:$3.1900
  • 18000:$3.0900
  • 30000:$2.9900
FDMT800100DC
DISTI # 49Y8342
ON SemiconductorFET 100V 2.95 MOHM PQFN88 / REEL0
  • 1:$5.0000
FDMT800100DC
DISTI # 57AC1882
ON SemiconductorMOSFET, N-CH, 100V, 162A, DUAL COOL 88,Transistor Polarity:N Channel,Continuous Drain Current Id:162A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes425
  • 1:$5.9500
  • 10:$5.3800
  • 25:$5.1300
  • 50:$4.7900
  • 100:$4.4500
  • 250:$4.2600
  • 500:$3.8800
  • 1000:$3.3800
FDMT800100DC
DISTI # 512-FDMT800100DC
ON SemiconductorMOSFET FET 100V 2.95 MOHM PQFN88
RoHS: Compliant
550
  • 1:$5.9500
  • 10:$5.3800
  • 25:$5.1300
  • 100:$4.4500
  • 250:$4.2600
  • 500:$3.8800
  • 1000:$3.3800
  • 3000:$3.2600
FDMT800100DC
DISTI # 2860230
ON SemiconductorMOSFET, N-CH, 100V, 162A, DUAL COOL 88
RoHS: Compliant
600
  • 1:£5.0700
  • 10:£3.9600
  • 100:£3.4300
  • 250:£3.2800
  • 500:£3.0000
FDMT800100DC
DISTI # 2860230
ON SemiconductorMOSFET, N-CH, 100V, 162A, DUAL COOL 88
RoHS: Compliant
425
  • 1:$11.2900
  • 10:$10.1600
  • 100:$8.3600
  • 500:$7.0000
  • 1000:$6.1000
圖片 型號 描述
BAR46AFILM

Mfr.#: BAR46AFILM

OMO.#: OMO-BAR46AFILM

Schottky Diodes & Rectifiers THYRISTOR TRIAC
LM5114AMF/S7003109

Mfr.#: LM5114AMF/S7003109

OMO.#: OMO-LM5114AMF-S7003109

Gate Drivers Sgl 7.6A Peak Currnt Lo-Side Gate Dvr
SM712-02HTG

Mfr.#: SM712-02HTG

OMO.#: OMO-SM712-02HTG

TVS Diodes / ESD Suppressors 600W 2 Channel Green Asymmetrical SOT23-3
TLVH431AQDBZR

Mfr.#: TLVH431AQDBZR

OMO.#: OMO-TLVH431AQDBZR

Voltage References Lo-Vtg Adj Precision Shunt Regulator
UCC25630-3DDBT

Mfr.#: UCC25630-3DDBT

OMO.#: OMO-UCC25630-3DDBT

Switching Controllers LLC Resonant Controller
LM2662M/NOPB

Mfr.#: LM2662M/NOPB

OMO.#: OMO-LM2662M-NOPB

Switching Voltage Regulators SWITCHED CAPACITOR VLTG CONVERTER
UMK107BJ104KAHT

Mfr.#: UMK107BJ104KAHT

OMO.#: OMO-UMK107BJ104KAHT

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1uF 50V X5R +/-10% 0603 AEC-Q200
PL300-101L

Mfr.#: PL300-101L

OMO.#: OMO-PL300-101L-1190

Audio Transformers / Signal Transformers PL160 300W 0.009Ohms Planar Trnsfm
LM5114AMF/S7003109

Mfr.#: LM5114AMF/S7003109

OMO.#: OMO-LM5114AMF-S7003109-TEXAS-INSTRUMENTS

Gate Drivers Sgl 7.6A Peak Currnt Lo-Side Gate Dv
UMK107BJ104KAHT

Mfr.#: UMK107BJ104KAHT

OMO.#: OMO-UMK107BJ104KAHT-TAIYO-YUDEN

Multilayer Ceramic Capacitors MLCC - SMD/SMT MidHi AEC-Q200 0603 X5R 50V 0.1uF 10%
可用性
庫存:
Available
訂購:
4500
輸入數量:
FDMT800100DC的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$5.94
US$5.94
10
US$5.37
US$53.70
25
US$5.12
US$128.00
100
US$4.45
US$445.00
250
US$4.25
US$1 062.50
500
US$3.87
US$1 935.00
1000
US$3.37
US$3 370.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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