A3T19H455W23SR6

A3T19H455W23SR6
Mfr. #:
A3T19H455W23SR6
製造商:
NXP Semiconductors
描述:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V
生命週期:
製造商新產品
數據表:
A3T19H455W23SR6 數據表
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HTML Datasheet:
A3T19H455W23SR6 DatasheetA3T19H455W23SR6 Datasheet (P4-P6)A3T19H455W23SR6 Datasheet (P7-P9)A3T19H455W23SR6 Datasheet (P10-P12)A3T19H455W23SR6 Datasheet (P13-P15)A3T19H455W23SR6 Datasheet (P16)
ECAD Model:
更多信息:
A3T19H455W23SR6 更多信息 A3T19H455W23SR6 Product Details
產品屬性
屬性值
製造商:
恩智浦
產品分類:
射頻 MOSFET 晶體管
RoHS:
Y
晶體管極性:
雙 N 通道
技術:
Id - 連續漏極電流:
3.6 A
Vds - 漏源擊穿電壓:
- 500 mV, 65 V
獲得:
16.4 dB
輸出功率:
81 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
安裝方式:
貼片/貼片
包裝/案例:
ACP-1230S-4L2S
打包:
捲軸
工作頻率:
1930 MHz to 1990 MHz
類型:
射頻功率MOSFET
品牌:
恩智浦半導體
通道數:
2 Channel
產品類別:
射頻 MOSFET 晶體管
出廠包裝數量:
150
子類別:
MOSFET
Vgs - 柵源電壓:
- 6 V, 10 V
Vgs th - 柵源閾值電壓:
1.4 V
第 # 部分別名:
935363503128
Tags
A3T1, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
型號 製造商 描述 庫存 價格
A3T19H455W23SR6
DISTI # A3T19H455W23SR6-ND
NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$119.7000
A3T19H455W23SR6
DISTI # A3T19H455W23SR6
Avnet, Inc.Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V - Tape and Reel (Alt: A3T19H455W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel
Americas - 0
    A3T19H455W23SR6
    DISTI # 51AC1917
    NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTOR, 1930-1990 MHZ, 81 W AVG., 30 V REEL0
    • 100:$112.5000
    • 50:$119.7000
    • 25:$121.5000
    • 10:$123.3000
    • 5:$126.9000
    • 1:$130.5000
    A3T19H455W23SR6
    DISTI # 771-A3T19H455W23SR6
    NXP SemiconductorsRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V
    RoHS: Compliant
    0
    • 150:$111.3500
    圖片 型號 描述
    A3T19H455W23SR6

    Mfr.#: A3T19H455W23SR6

    OMO.#: OMO-A3T19H455W23SR6

    RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V
    A3T19H455W23SR6

    Mfr.#: A3T19H455W23SR6

    OMO.#: OMO-A3T19H455W23SR6-NXP-SEMICONDUCTORS

    AIRFAST RF POWER LDMOS TRANSISTO
    可用性
    庫存:
    Available
    訂購:
    3000
    輸入數量:
    A3T19H455W23SR6的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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