SI4431CDY-T1-E3

Mfr. #:: SI4431CDY-T1-E3
製造商:: Vishay
描述:: MOSFET P-CH 30V 9A 8SOIC
生命週期:: 製造商新產品
數據表:: SI4431CDY-T1-E3 數據表
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更多信息:: SI4431CDY-T1-E3 更多信息

產品屬性
屬性值

製造商: 威世

產品分類: FET - 單

打包: 捲軸

部分別名: SI4431CDY-E3

單位重量: 0.006596 oz

安裝方式: 貼片/貼片

包裝盒: SOIC-Narrow-8

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 P-Channel

鈀功耗: 2.5 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 9 ns 11 ns

上升時間: 13 ns 89 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 7 A

Vds-漏-源-擊穿電壓: - 30 V

Rds-On-Drain-Source-Resistance: 32 mOhms

晶體管極性: P-通道

典型關斷延遲時間: 23 ns 22 ns

典型開啟延遲時間: 10 ns 38 ns

通道模式: 增強

Tags: SI4431CDY-T1, SI4431CDY-T, SI4431C, SI4431, SI443, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4431CDY-T1-E3 描述

***ure Electronics: Single P-Channel 30 V 2.5 W 38 nC Silicon Surface Mount Mosfet - SOIC-8

***ical: Trans MOSFET P-CH 30V 9A 8-Pin SOIC N T/R

***i-Key: MOSFET P-CH 30V 9A 8SOIC

***ark: Transistor Polarity:p Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.026Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:4.2W; No. Of Pins:8Pins Rohs Compliant: No

SI4431CDY-T1-E3 更多信息

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型號	製造商	描述	庫存	價格
SI4431CDY-T1-E3 DISTI # V72:2272_09216489	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2426	1000:$0.3957 500:$0.4347 250:$0.4737 100:$0.4739 25:$0.6091 10:$0.6098 1:$0.7477
SI4431CDY-T1-E3 DISTI # V36:1790_09216489	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	0
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2041In Stock	1000:$0.5588 500:$0.6993 100:$0.8924 10:$1.1210 1:$1.2600
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2041In Stock	1000:$0.5588 500:$0.6993 100:$0.8924 10:$1.1210 1:$1.2600
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	12500:$0.4675 5000:$0.4845 2500:$0.5084
SI4431CDY-T1-E3 DISTI # 31749187	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2426	1000:$0.4254 500:$0.4673 250:$0.5092 100:$0.5094 25:$0.6548 15:$0.6555
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R (Alt: SI4431CDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431CDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2911 5000:$0.2825 10000:$0.2710 15000:$0.2635 25000:$0.2564
SI4431CDY-T1-E3 DISTI # 33P5257	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET	0	50000:$0.3160 30000:$0.3300 20000:$0.3550 10000:$0.3790 5000:$0.4110 1:$0.4210
SI4431CDY-T1-E3. DISTI # 23AC9598	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power Dissipation Pd:4.2W,No. of Pins:8Pins RoHS Compliant: No	0	50000:$0.3160 30000:$0.3300 20000:$0.3550 10000:$0.3790 5000:$0.4110 1:$0.4210
SI4431CDY-T1-E3 DISTI # 781-SI4431CDY-E3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant	3041	1:$0.8000 10:$0.6380 100:$0.4850
SI4431CDY-T1-E3	Vishay Intertechnologies		999	201:$0.8000 51:$1.0000 1:$2.0000
SI4431CDYT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 1990

相關產品

圖片	型號	描述
	Mfr.#: SI4431CDY-T1-GE3 OMO.#: OMO-SI4431CDY-T1-GE3	MOSFET -30V Vds 20V Vgs SO-8
	Mfr.#: SI4431CDY-T1-E3 OMO.#: OMO-SI4431CDY-T1-E3	MOSFET -30V Vds 20V Vgs SO-8
	Mfr.#: SI4431CDY OMO.#: OMO-SI4431CDY-1190	全新原裝
	Mfr.#: SI4431CDY-GE3-S OMO.#: OMO-SI4431CDY-GE3-S-1190	全新原裝
	Mfr.#: SI4431CDY-T1-E3 OMO.#: OMO-SI4431CDY-T1-E3-VISHAY	MOSFET P-CH 30V 9A 8SOIC
	Mfr.#: SI4431CDY-T1-GE3 OMO.#: OMO-SI4431CDY-T1-GE3-VISHAY	MOSFET P-CH 30V 9A 8-SOIC
	Mfr.#: SI4431CDY-T1-GE3-S OMO.#: OMO-SI4431CDY-T1-GE3-S-1190	全新原裝
	Mfr.#: SI4431CDY-TI-GE3 OMO.#: OMO-SI4431CDY-TI-GE3-1190	全新原裝

可用性

庫存:: Available
訂購:: 3500
輸入數量:

SI4431CDY-T1-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.38~~; ~~US$0.38~~

10: ~~US$0.37~~; ~~US$3.65~~

100: ~~US$0.35~~; ~~US$34.62~~

500: ~~US$0.33~~; ~~US$163.45~~

1000: ~~US$0.31~~; ~~US$307.70~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

SI4431CDY-T1 3
SI4431CDY-T 4
SI4431C 6
SI4431 34
SI443 128
SI44 574
SI4 2994

SI4431CDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes