LMG1205YFXT

Mfr. #:: LMG1205YFXT
描述:: LMG1205YFXT
生命週期:: 製造商新產品
數據表:: LMG1205YFXT 數據表
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更多信息:: LMG1205YFXT 更多信息 LMG1205YFXT Product Details

產品屬性
屬性值

Tags: LMG120, LMG12, LMG1, LMG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

LMG1205YFXT 描述

***as Instruments: 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA -40 to 125

***et Europe: 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 5A 12-Pin DSBGA T/R

***ical: Driver 5A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 12-Pin DSBGA T/R

***i-Key: IC GATE DRVR HALF-BRIDGE 12DSBGA

***ark: 5A 100V Half-Bridge Gate Driver For Enh

LMG1205YFXT 更多信息

LMG1205 Half-Bridge Gate Driver: OMO Electronic LMG1205 Half-Bridge Gate Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5V. This feature prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LMG1205 has split-gate outputs which provide flexibility to adjust the turn-on and turn-off strength independently.

Gallium Nitride (GaN): OMO Electronic Gallium Nitride (GaN) solutions deliver high-efficiency, power density, and reliability. The OMO Electronic GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.

Market price

型號	描述	庫存	價格
LMG1205YFXT DISTI # 31723997	5A 100V HALF-BRIDGE GATE DRIVE	10000	1250:$2.0901 500:$2.4782 250:$2.7619
LMG1205YFXT DISTI # 296-49744-1-ND	LMG1205YFXT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1484In Stock	100:$3.0288 10:$3.6970 1:$4.1200
LMG1205YFXT DISTI # 296-49744-6-ND	LMG1205YFXT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1484In Stock	100:$3.0288 10:$3.6970 1:$4.1200
LMG1205YFXT DISTI # 296-49744-2-ND	LMG1205YFXT RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	1250In Stock	1250:$2.1112 500:$2.5033 250:$2.7898
LMG1205YFXT DISTI # V39:1801_17535455	5A 100V HALF-BRIDGE GATE DRIVE	0
LMG1205YFXT DISTI # V72:2272_17535455	5A 100V HALF-BRIDGE GATE DRIVE	0
LMG1205YFXT DISTI # LMG1205YFXT	100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 5A 12-Pin DSBGA T/R - Tape and Reel (Alt: LMG1205YFXT) RoHS: Compliant Min Qty: 250 Container: Reel	Americas - 0	2500:$1.7900 1500:$1.8900 500:$1.9900 1000:$1.9900 250:$2.0900
LMG1205YFXT	100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs	730	1000:$1.7100 750:$1.8000 500:$2.1300 250:$2.5000 100:$2.6700 25:$3.0500 10:$3.2700 1:$3.6300
LMG1205YFXT DISTI # 595-LMG1205YFXT	Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH RoHS: Compliant	2221	1:$3.9900 10:$3.5900 100:$2.9400 250:$2.7600 500:$2.5000 1000:$2.1100 2500:$2.0000
LMG1205YFXR DISTI # 595-LMG1205YFXR	Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH RoHS: Compliant	162	1:$3.4700 10:$3.1200 100:$2.5500 250:$2.4000 500:$2.1700 1000:$1.8300 3000:$1.7400

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