FDFME2P823ZT

Mfr. #:: FDFME2P823ZT
製造商:: ON Semiconductor
描述:: IGBT Transistors MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode
生命週期:: 製造商新產品
數據表:: FDFME2P823ZT 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 仙童半導體

產品分類: 晶體管 - FET、MOSFET - 單

打包: 捲軸

單位重量: 0.000889 oz

安裝方式: 貼片/貼片

包裝盒: microFET-6

技術: 矽

通道數: 2 Channel

配置: 單用肖特基二極管

晶體管型: 2 P-Channel

鈀功耗: 1.3 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 16 ns

上升時間: 4.8 ns

VGS-柵極-源極-電壓: +/- 8 V

Id 連續漏極電流: - 2.3 A

Vds-漏-源-擊穿電壓: - 20 V

VGS-th-Gate-Source-Threshold-Voltage: - 0.6 V

Rds-On-Drain-Source-Resistance: 95 mOhms

晶體管極性: P-通道

典型關斷延遲時間: 33 ns

典型開啟延遲時間: 4.7 ns

Qg-門電荷: 5.5 nC

正向跨導最小值: 7 S

Tags: FDFME, FDFM, FDF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDFME2P823ZT 描述

***p One Stop Global: Trans MOSFET P-CH 20V 2.3A 6-Pin MicroFET T/R

***nell: MOSFET, P CH, 20V, 2.6A, 6MICROFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:1.4W; Transistor Case Style:µFET; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appliacrions. It features as MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum condution losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Market price

型號	製造商	描述	庫存	價格
FDFME2P823ZT DISTI # FDFME2P823ZTTR-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
FDFME2P823ZT DISTI # FDFME2P823ZTCT-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDFME2P823ZT DISTI # FDFME2P823ZTDKR-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDFME2P823ZT	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	40000	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3400 1:$0.3600
FDFME2P823ZT DISTI # 512-FDFME2P823ZT	ON Semiconductor	MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS: Compliant	0

相關產品

圖片

型號

描述

Mfr.#: FDFME2P823ZT

OMO.#: OMO-FDFME2P823ZT-ON-SEMICONDUCTOR

IGBT Transistors MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode

可用性

庫存:: Available
訂購:: 1500
輸入數量:

FDFME2P823ZT的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.39~~; ~~US$0.39~~

10: ~~US$0.37~~; ~~US$3.70~~

100: ~~US$0.35~~; ~~US$35.10~~

500: ~~US$0.33~~; ~~US$165.75~~

1000: ~~US$0.31~~; ~~US$312.00~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

FDFME 3
FDFM 42
FDF 129

FDFME2P823ZT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes