SI8808DB-T2-E1

SI8808DB-T2-E1
Mfr. #:
SI8808DB-T2-E1
製造商:
Vishay
描述:
MOSFET N-CH 30V MICROFOOT
生命週期:
製造商新產品
數據表:
SI8808DB-T2-E1 數據表
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SI8808DB-T2-E1 更多信息
產品屬性
屬性值
製造商
威世矽
產品分類
FET - 單
系列
溝槽FETR
打包
Digi-ReelR 替代包裝
安裝方式
貼片/貼片
商品名
微足
包裝盒
4-UFBGA
技術
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
通道數
1 Channel
供應商-設備-包
4-Microfoot
配置
單身的
FET型
MOSFET N 溝道,金屬氧化物
最大功率
500mW
晶體管型
1 N-Channel
漏源電壓 Vdss
30V
輸入電容-Ciss-Vds
330pF @ 15V
FET-Feature
標準
Current-Continuous-Drain-Id-25°C
-
Rds-On-Max-Id-Vgs
95 mOhm @ 1A, 4.5V
Vgs-th-Max-Id
900mV @ 250μA
柵極電荷-Qg-Vgs
10nC @ 8V
鈀功耗
900 mW
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
VGS-柵極-源極-電壓
8 V
Id 連續漏極電流
2.5 A
Vds-漏-源-擊穿電壓
30 V
VGS-th-Gate-Source-Threshold-Voltage
0.9 V
Rds-On-Drain-Source-Resistance
95 mOhms
晶體管極性
N通道
Qg-門電荷
3.7 nC
正向跨導最小值
10 S
Tags
SI880, Si88, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R
***et
N-CHANNEL 30 V (D-S) MOSFET
***
N-CHANNEL 8-V (D-S) MOSFET
***i-Key
MOSFET N-CH 30V MICROFOOT
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.071Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:900Mv; Power Dissipation Pd:900Mw; No. Of Pins:4Pins Rohs Compliant: No
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
型號 製造商 描述 庫存 價格
SI8808DB-T2-E1
DISTI # V72:2272_09216536
Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot
RoHS: Compliant
5955
  • 3000:$0.1448
  • 1000:$0.1577
  • 500:$0.2033
  • 250:$0.2384
  • 100:$0.2480
  • 25:$0.3001
  • 10:$0.3335
  • 1:$0.4370
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1CT-ND
Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
22093In Stock
  • 1000:$0.1872
  • 500:$0.2423
  • 100:$0.3304
  • 10:$0.4410
  • 1:$0.5200
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1DKR-ND
Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
22093In Stock
  • 1000:$0.1872
  • 500:$0.2423
  • 100:$0.3304
  • 10:$0.4410
  • 1:$0.5200
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1TR-ND
Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
21000In Stock
  • 3000:$0.1657
SI8808DB-T2-E1
DISTI # 25790129
Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot
RoHS: Compliant
5955
  • 3000:$0.1448
  • 1000:$0.1577
  • 500:$0.2033
  • 250:$0.2384
  • 100:$0.2480
  • 51:$0.3001
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1
Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8808DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 6000
  • 3000:$0.1949
  • 6000:$0.1939
  • 12000:$0.1939
  • 18000:$0.1929
  • 30000:$0.1929
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1
Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R (Alt: SI8808DB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.2329
  • 6000:€0.1589
  • 12000:€0.1369
  • 18000:€0.1259
  • 30000:€0.1169
SI8808DB-T2-E1.
DISTI # 28AC2185
Vishay IntertechnologiesN-CHANNEL 30 V (D-S) MOSFET , ROHS COMPLIANT: NO6000
  • 1:$0.1620
  • 3000:$0.1620
SI8808DB-T2-E1
DISTI # 78-SI8808DB-T2-E1
Vishay IntertechnologiesMOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
RoHS: Compliant
3856
  • 1:$0.4600
  • 10:$0.3510
  • 100:$0.2610
  • 500:$0.2140
  • 1000:$0.1660
  • 3000:$0.1620
SI8808DBT2E1Vishay Intertechnologies 
RoHS: Compliant
Europe - 3000
    SI8808DB-T2-E1
    DISTI # C1S803602004241
    Vishay IntertechnologiesMOSFETs5955
    • 100:$0.2480
    • 50:$0.2949
    • 25:$0.3277
    • 10:$0.3335
    SI8808DB-T2-E1Vishay IntertechnologiesMOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
    RoHS: Compliant
    Americas -
      圖片 型號 描述
      SI8808DB-T2-E1

      Mfr.#: SI8808DB-T2-E1

      OMO.#: OMO-SI8808DB-T2-E1

      MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
      SI8808DB-T2-E1

      Mfr.#: SI8808DB-T2-E1

      OMO.#: OMO-SI8808DB-T2-E1-VISHAY

      MOSFET N-CH 30V MICROFOOT
      SI8808DBT2E1

      Mfr.#: SI8808DBT2E1

      OMO.#: OMO-SI8808DBT2E1-1190

      Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      可用性
      庫存:
      Available
      訂購:
      3000
      輸入數量:
      SI8808DB-T2-E1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$0.24
      US$0.24
      10
      US$0.23
      US$2.31
      100
      US$0.22
      US$21.87
      500
      US$0.21
      US$103.30
      1000
      US$0.19
      US$194.40
      從...開始
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