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SIHB18N60E-GE3

SIHB18N60E-GE3
Mfr. #:
SIHB18N60E-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
生命週期:
製造商新產品
數據表:
SIHB18N60E-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SIHB18N60E-GE3 DatasheetSIHB18N60E-GE3 Datasheet (P4-P6)SIHB18N60E-GE3 Datasheet (P7)
ECAD Model:
更多信息:
SIHB18N60E-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
560 V
Id - 連續漏極電流：
16 A
Rds On - 漏源電阻：
380 mOhms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
46 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
179 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
系列：
E
品牌：
威世 / Siliconix
秋季時間：
24 ns
產品類別：
MOSFET
上升時間：
24 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
51 ns
典型的開啟延遲時間：
17 ns
單位重量：
0.077603 oz
Tags
SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans MOSFET N-CH 600V 18A 3-Pin D2PAK
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHB18N60E-GE3
DISTI # SIHB18N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 18A TO263
RoHS: Not compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.7405
SIHB18N60E-GE3
DISTI # SIHB18N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 18A 3-Pin D2PAK (Alt: SIHB18N60E-GE3)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 500:€1.5900
  • 300:€1.6900
  • 200:€1.8900
  • 100:€2.2900
  • 50:€2.9900
SIHB18N60E-GE3
DISTI # SIHB18N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 18A 3-Pin D2PAK - Tape and Reel (Alt: SIHB18N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.4900
  • 10000:$1.4900
  • 2000:$1.5900
  • 4000:$1.5900
  • 1000:$1.6900
SIHB18N60E-GE3
DISTI # 78-SIHB18N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1000:$1.6600
  • 2000:$1.5800
  • 5000:$1.5200
圖片 型號 描述
SIHB18N60E-GE3

Mfr.#: SIHB18N60E-GE3

OMO.#: OMO-SIHB18N60E-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB18N60E-GE3

Mfr.#: SIHB18N60E-GE3

OMO.#: OMO-SIHB18N60E-GE3-VISHAY

 MOSFET N-CH 600V 18A TO263
可用性
庫存:
Available
訂購:
3500
輸入數量:
SIHB18N60E-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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