FDJ1027P

Mfr. #:: FDJ1027P
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 1.8 V P-CH PowerTrench MOSFET
生命週期:: 製造商新產品
數據表:: FDJ1027P 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SC-75-6

通道數：: 2 Channel

晶體管極性：: P-通道

Vds - 漏源擊穿電壓：: 20 V

Id - 連續漏極電流：: 2.8 A

Rds On - 漏源電阻：: 160 mOhms

Vgs - 柵源電壓：: 8 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 1.5 W

配置：: 雙重的

頻道模式：: 增強

打包：: 捲軸

高度：: 0.8 mm

長度：: 1.6 mm

產品：: MOSFET 小信號

系列：: FDJ1027P

晶體管類型：: 2 P-Channel

寬度：: 1.6 mm

品牌：: 安森美半導體/飛兆半導體

秋季時間：: 13 ns

產品類別：: MOSFET

上升時間：: 13 ns

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 13 ns

典型的開啟延遲時間：: 8 ns

第 # 部分別名：: FDJ1027P_NL

單位重量：: 0.003386 oz

Tags: FDJ1027P, FDJ1027, FDJ102, FDJ10, FDJ1, FDJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDJ1027P 描述

***ical: Trans MOSFET P-CH 20V 2.8A 6-Pin SC-75 T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-2.8A; On Resistance, Rds(on):108mohm; Package/Case:FLMP; Power Dissipation, Pd:1.5W; Drain-Source Breakdown Voltage:-20V ;RoHS Compliant: Yes

***rchild Semiconductor: This dual P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

***nell: MOSFET P CH -20V -2.8A FLMP SC-75; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.8A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 1.5W; Transistor Case Style: SC-75; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: -2.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -800mV; Voltage Vgs Rds on Measurement: -4.5V

***inecomponents.com: MLP6 2X1.6,-20V,-2.9A,112m ohm,DUAL, PCH POWER TRENCH MOSFET

***ark: Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):93mohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-700mV; Power Dissipation Pd:1.4W ;RoHS Compliant: Yes

***rchild Semiconductor: This dual P-Channel MOSFET uses Fairchild's advanced low voltage PowerTrench® process. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The SC-75 MicroFET package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

***emi: N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ

***el Electronic: Modular Connectors - Jacks With Magnetics 1 (Unlimited) RJ45 1 Solder 90° Angle (Right) Shielded, EMI Finger Through Hole Down 10/100/1000 Base-T, AutoMDIX CONN MAGJACK 1PORT 1000 BASE-T

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

***ment14 APAC: MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V

***rchild Semiconductor: This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

***ure Electronics: Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23

***ical: Trans MOSFET N-CH 20V 1.2A Automotive 3-Pin SC-59 T/R

***ser: Transistor - FET N-Channel 20V 1.2A

***des Inc SCT: N-Channel Mosfet, 20V VDS, 8±V VGS

***ark: Mosfet Bvdss: 8V~24V Sc59 T&r 3K

***(Formerly Allied Electronics): N-Channel Enhancement Mode FET SC-59

***ment14 APAC: MOSFET, N CH, 20V, 1.2A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-59; No. of Pins:3; Current Id Max:4A; Package / Case:SC-59; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V

***(Formerly Allied Electronics): SI1062X-T1-GE3 N-channel MOSFET Transistor; 0.53 A; 20 V; 3-Pin SC-89

***ment14 APAC: MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Source Voltage Vds:20V; On Resistance

***nell: MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 530mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***et Japan: Transistor MOSFET Array Dual N-CH 20V 0.61A 6-Pin SC-89 T/R

***ure Electronics: Dual N-Channel 20 V 0.22 W 1.2 nC Silicon Surface Mount Mosfet - SC-89-6

***ment14 APAC: MOSFET, DUAL N-CH, 20V, 0.16A, SC-89; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:610mA; Source Voltage Vds:20V; On

***nell: MOSFET, DUAL N-CH, 20V, 0.16A, SC-89; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 610mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Market price

型號	製造商	描述	庫存	價格
FDJ1027P DISTI # FDJ1027P-ND	ON Semiconductor	MOSFET 2P-CH 20V 2.8A SC-75 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDJ1027P DISTI # 512-FDJ1027P	ON Semiconductor	MOSFET 1.8 V P-CH PowerTrench MOSFET RoHS: Compliant	0
FDJ1027P	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 2.8A I(D), 20V, 0.16ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	283275	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600
FDJ1027P	Fairchild Semiconductor Corporation		48000
FDJ1027P	Fairchild Semiconductor Corporation		6000	6:$0.8625 25:$0.5606 91:$0.3234 311:$0.2760 672:$0.2415 1596:$0.2243
FDJ1027P	.		27
FDJ1027P	Fairchild Semiconductor Corporation		38400	4580:$0.2808 2138:$0.3276 1:$0.9360
FDJ1027P	Freescale Semiconductor		4800	2677:$0.2875 581:$0.2990 1:$1.1500
FDJ1027P-G	Fairchild Semiconductor Corporation		3000
FDJ1027P. DISTI # 1350570	ON Semiconductor	RoHS: Compliant	0	1000:$0.4810 500:$0.5120 250:$0.6130 100:$0.7260 25:$1.0100 1:$1.2000

相關產品

圖片	型號	描述
	Mfr.#: FDJ1032C OMO.#: OMO-FDJ1032C	MOSFET SC75 FLMP COMPLEMENTARY POWER
	Mfr.#: FDJ127P OMO.#: OMO-FDJ127P	MOSFET P-Ch -1.8 Vgs Spec PowerTrench
	Mfr.#: FDJ1027P OMO.#: OMO-FDJ1027P	MOSFET 1.8 V P-CH PowerTrench MOSFET
	Mfr.#: FDJ1027P-G OMO.#: OMO-FDJ1027P-G-1190	全新原裝
	Mfr.#: FDJ1029P OMO.#: OMO-FDJ1029P-1190	全新原裝
	Mfr.#: FDJ128N-NL OMO.#: OMO-FDJ128N-NL-1190	全新原裝
	Mfr.#: FDJ128N/BXX OMO.#: OMO-FDJ128N-BXX-1190	全新原裝
	Mfr.#: FDJ128N_F077 OMO.#: OMO-FDJ128N-F077-ON-SEMICONDUCTOR	MOSFET N-CH 20V 5.5A SC75-6
	Mfr.#: FDJ128N_NL , 1N5234BRL OMO.#: OMO-FDJ128N-NL-1N5234BRL-1190	全新原裝
	Mfr.#: FDJ129P-NL OMO.#: OMO-FDJ129P-NL-1190	全新原裝