SI4932DY-T1-GE3

Name: Vishay - SI4932DY-T1-GE3
Brand: Vishay
SKU: OMO-2921118
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI4932DY-T1-GE3
製造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 30V 8.0A 3.2W 15mohm @ 10V
生命週期:: 製造商新產品
數據表:: SI4932DY-T1-GE3 數據表
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更多信息:: SI4932DY-T1-GE3 更多信息

產品屬性
屬性值

製造商: 威世矽

產品分類: FET - 陣列

系列: 溝槽FETR

打包: 捲帶 (TR)

部分別名: SI4932DY-GE3

單位重量: 0.006596 oz

安裝方式: 貼片/貼片

包裝盒: 8-SOIC (0.154", 3.90mm Width)

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: 8-SO

配置: 雙雙漏

FET型: 2 N-Channel (Dual)

最大功率: 3.2W

晶體管型: 2 N-Channel

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 1750pF @ 15V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 8A

Rds-On-Max-Id-Vgs: 15 mOhm @ 7A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

柵極電荷-Qg-Vgs: 48nC @ 10V

鈀功耗: 2 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 8 ns

上升時間: 10 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 8 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 15 mOhms

晶體管極性: N通道

典型關斷延遲時間: 26 ns

典型開啟延遲時間: 21 ns

通道模式: 增強

Tags: SI493, SI49, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4932DY-T1-GE3 描述

***ure Electronics: Si4932DY Series Dual N-Channel 30 V 15 mOhms Surface Mount Power Mosfet-SOIC-8

***et: Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R

***ark: DUAL N-CHANNEL 30-V (D-S) MOSFET

SI4932DY-T1-GE3 更多信息

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型號	製造商	描述	庫存	價格
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.6237
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4932DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5889 5000:$0.5719 10000:$0.5479 15000:$0.5329 25000:$0.5189
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R (Alt: SI4932DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.6412 5000:$0.4933 7500:$0.3926 12500:$0.3317 25000:$0.3054 62500:$0.2960 125000:$0.2871
SI4932DY-T1-GE3 DISTI # 781-SI4932DY-GE3	Vishay Intertechnologies	MOSFET 30V 8.0A 3.2W 15mohm @ 10V RoHS: Compliant	0	1:$1.4200 10:$1.1700 100:$0.8960 500:$0.7700 1000:$0.6760 2500:$0.6750
SI4932DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V 8.0A 3.2W 15mohm @ 10V RoHS: Compliant	Americas -