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IRLU8113PBF

IRLU8113PBF
Mfr. #:
IRLU8113PBF
製造商:
Infineon / IR
描述:
MOSFET MOSFT 30V 94A 6mOhm 22nC Qg Log Lvl
生命週期:
製造商新產品
數據表:
IRLU8113PBF 數據表
交貨:
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支付:
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HTML Datasheet:
IRLU8113PBF DatasheetIRLU8113PBF Datasheet (P4-P6)IRLU8113PBF Datasheet (P7-P9)IRLU8113PBF Datasheet (P10-P12)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-251-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
94 A
Rds On - 漏源電阻：
7.4 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
22 nC
Pd - 功耗：
89 W
配置：
單身的
打包：
管子
高度：
6.22 mm
長度：
6.73 mm
晶體管類型：
1 N-Channel
寬度：
2.38 mm
品牌：
英飛凌/紅外
產品類別：
MOSFET
出廠包裝數量：
75
子類別：
MOSFET
第 # 部分別名：
SP001552924
單位重量：
0.139332 oz
Tags
IRLU8, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 94A, 6 MOHM, 22 NC QG, I-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N, 30V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Threshold Voltage Vgs Typ:2.25V; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Package / Case:IPAK; Power Dissipation Pd:89mW; Pulse Current Idm:380A; SMD Marking:89; Termination Type:Through Hole; Transistor Type:Power MOSFET; Turn Off Time:15ns; Turn On Time:9.2ns; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***ser
MOSFETs 30V,116A,5.1OHM,NCH PWR TRENCH MOSFET
***ter Electronics
30V,116A,5.1 OHM, NCH, IPAK, POWER TRENCH MOSFET
***ical
Trans MOSFET N-CH 30V 18A 3-Pin(3+Tab) IPAK Tube
***r Electronics
Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ser
MOSFETs- Power and Small Signal NFET 30V 88A 5MOHM
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:88A; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:88A; Resistance, Rds On:0.005ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:66W; Voltage, Vds Max:30V
***i-Key
MOSFET N-CH 30V 90A IPAK
***ser
MOSFETs 30V N-Channel PowerTrench SyncFET
***el Nordic
Contact for details
***inecomponents.com
30V N-Channel PowerTrench MOSFET
***et
30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 17A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ser
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
***r Electronics
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 11.3A/79A IPAK
***th Star Micro
Not recommended for new design. Use NTD4906N
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes
型號 製造商 描述 庫存 價格
IRLU8113PBF
DISTI # IRLU8113PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 94A I-PAK
RoHS: Compliant
Min Qty: 900
Container: Tube		Limited Supply - Call
    IRLU8113PBF
    DISTI # 70017972    		Infineon Technologies AGMOSFET,N Ch.,30V,94A,6 MOHM,22 NC QG,I-PAK,Pb-Free
    RoHS: Compliant    		0
    • 1:$0.5600
    IRLU8113PBFInternational Rectifier 
    RoHS: Compliant    		1198
      IRLU8113PBF
      DISTI # 1436999      		Infineon Technologies AG 
      RoHS: Compliant      		0
      • 1000:$2.1100
      • 500:$2.2600
      • 250:$2.5500
      • 100:$2.8600
      • 10:$3.5300
      • 1:$4.2900
      圖片 型號 描述
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      IRLU8113PBF

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      OMO.#: OMO-IRLU8743PBF-INFINEON-TECHNOLOGIES

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      OMO.#: OMO-IRLU8726PBF-INFINEON-TECHNOLOGIES

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      		 IGBT Transistors MOSFET MOSFT 58A 8.9mOhm 30V 10nC Qg log lvl
      IRLU8721PBF

      Mfr.#: IRLU8721PBF

      OMO.#: OMO-IRLU8721PBF-126

      		 IGBT Transistors MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl
      IRLU8256PBF

      Mfr.#: IRLU8256PBF

      OMO.#: OMO-IRLU8256PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl
      可用性
      庫存:
      Available
      訂購:
      2000
      輸入數量:
      IRLU8113PBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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