FS50R06YL4

Mfr. #:: FS50R06YL4
製造商:: Infineon Technologies
描述:: IGBT Modules N-CH 600V 55A
生命週期:: 製造商新產品
數據表:: FS50R06YL4 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT 模塊

產品：: IGBT 矽模塊

配置：: 十六進制

集電極-發射極電壓 VCEO 最大值：: 600 V

25 C 時的連續集電極電流：: 55 A

包裝/案例：: EASY2

最低工作溫度：: - 40 C

最高工作溫度：: + 125 C

打包：: 托盤

高度：: 17 mm

長度：: 55.9 mm

寬度：: 45.6 mm

品牌：: 英飛凌科技

安裝方式：: 底盤安裝

最大柵極發射極電壓：: 20 V

產品類別：: IGBT 模塊

出廠包裝數量：: 20

子類別：: IGBT

第 # 部分別名：: FS50R06YL4BOMA1 SP000100285

Tags: FS50R06Y, FS50R06, FS50R0, FS50R, FS50, FS5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FS50R06YL4 評級和評論

I***v

Corresponds to the description i recommend the seller 2018-11-09 ordered a came 2019-01-08

2019-01-08

A***o

Wavgat board, atmega 168 chip.

2019-04-06

FS50R06YL4 描述

*** Electronic Components: IGBT Modules N-CH 600V 55A

***el Nordic: Contact for details

*** Stop Electro: Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel

***el Electronic: Trans IGBT Module N-CH 1.2KV 55A 12-Pin Case SP-1

***rochip SCT: High Voltage Power Module, Phase leg, 1200V, RoHS

***ark: PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes

***ical: Trans IGBT Module N-CH 1200V 55A 208000mW 32-Pin Case SP-3 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Three Phase bridge, 1200V, RoHS

***ark: PM-IGBT-TFS-SP3F SP3F Tube RoHS Compliant: Yes

***i-Key: IGBT MOD TRENCH 3PH BRIDGE SP3

***ical: Trans IGBT Module N-CH 1200V 55A 210000mW 28-Pin ECONO2-6 Tray

***ark: Igbt Mod, 6 N-Ch, 1.2Kv, 55A, 210W Rohs Compliant: Yes

***et: Transistor IGBT Module N-CH 1200V 55A ±20V Screw Tray

***ineon SCT: 1200 V, 35 A sixpack IGBT Module, AG-ECONO2-6, RoHS

***ment14 APAC: IGBT MODULE, 1.2KV, 55A, SIX PACK;

***S: French Electronic Distributor since 1988

***ineon: EconoPACK 2 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT3, Emitter Controlled HE diode and NTC | Summary of Features: High power density; Established Econo module concept; Integrated temperature sensor available; Low stray inductance module design; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon

*** Stop Electro: Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel

***el Electronic: Trans IGBT Module N-CH 1.2KV 55A 32-Pin Case SP-3

***rochip SCT: High Voltage Power Module, Full bridge, 1200V, RoHS

***ark: PM-IGBT-TFS-SP3F SP3F Tube RoHS Compliant: Yes

***i-Key: IGBT MOD TRENCH FULL BRIDGE SP3

***ical: Trans IGBT Module N=-CH 1200V 45A 205000mW 18-Pin EASY1B Tray

***nell: IGBT, LOW POW, 1200V, 25A, EASYPACK; Transistor Polarity: N Channel; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 205W; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans

***ark: Igbt Module; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:205W; Operating Temperature Max:150°C; Igbt Termination:press Fit; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes

***ineon: EasyPACK 1B 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon; ups

***ource: EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC

***ment14 APAC: IGBT, LOW POWER, 600V, 50A, EASYPACK; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:205W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:18; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:205W

***ineon: EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; majorhomeapplicances

Market price

型號	製造商	描述	庫存	價格
FS50R06YL4BOMA1 DISTI # FS50R06YL4BOMA1-ND	Infineon Technologies AG	MOD IGBT LOW PWR EASY2-1 RoHS: Compliant Min Qty: 20 Container: Tray	Limited Supply - Call	20:$62.0275
FS50R06YL4 DISTI # FS50R06YL4	Infineon Technologies AG	Trans IGBT Module N-CH 600V 55A 18-Pin EASY2 (Alt: FS50R06YL4) RoHS: Compliant Min Qty: 20	Asia - 0	20:$54.4457 40:$52.9333 60:$51.5027 100:$50.1474 200:$49.4961 500:$48.8615 1000:$48.2430
FS50R06YL4BOMA1 DISTI # FS50R06YL4BOMA1	Infineon Technologies AG	LOW POWER EASY - Trays (Alt: FS50R06YL4BOMA1) RoHS: Compliant Min Qty: 20 Container: Tray	Americas - 0	20:$54.8900 40:$52.8900 80:$50.9900 120:$49.2900 200:$48.3900
FS50R06YL4 DISTI # 641-FS50R06YL4X	Infineon Technologies AG	IGBT Modules N-CH 600V 55A	0

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