FQP8N60C

Mfr. #:: FQP8N60C
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 600V N-Ch Q-FET advance C-Series
生命週期:: 製造商新產品
數據表:: FQP8N60C 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 7.5 A

Rds On - 漏源電阻：: 1.2 Ohms

Vgs - 柵源電壓：: 30 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 147 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

高度：: 16.3 mm

長度：: 10.67 mm

系列：: FQP8N60C

晶體管類型：: 1 N-Channel

類型：: MOSFET

寬度：: 4.7 mm

品牌：: 安森美半導體/飛兆半導體

正向跨導 - 最小值：: 8.7 S

秋季時間：: 64.5 ns

產品類別：: MOSFET

上升時間：: 60.5 ns

出廠包裝數量：: 1000

子類別：: MOSFET

典型關斷延遲時間：: 81 ns

典型的開啟延遲時間：: 16.5 ns

第 # 部分別名：: FQP8N60C_NL

單位重量：: 0.063493 oz

Tags: FQP8N60C, FQP8N60, FQP8N6, FQP8N, FQP8, FQP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQP8N60C 描述

***emi: Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220

***ical: Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail

***enic: 600V 7.5A 147W 1.2´Î@10V3.75A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:147W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.2ohm; Package / Case:TO-220; Power Dissipation Pd:147W; Power Dissipation Pd:147W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Market price

型號	製造商	描述	庫存	價格
FQP8N60C DISTI # FQP8N60C-ND	ON Semiconductor	MOSFET N-CH 600V 7.5A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	1000In Stock	1000:$1.0170 500:$1.2274 100:$1.5781 10:$1.9640 1:$2.1700
FQP8N60C DISTI # FQP8N60C	ON Semiconductor	Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8N60C) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.7599 2000:$0.7559 4000:$0.7459 6000:$0.7359 10000:$0.7179
FQP8N60C DISTI # 97K0198	ON Semiconductor	MOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:7.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:147W,MSL:- , RoHS Compliant: Yes	0	1:$1.8700 10:$1.5900 100:$1.2700 500:$1.1100 1000:$0.9250 2500:$0.8610 5000:$0.8290
FQP8N60C	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	43736	1000:$1.0600 500:$1.1200 100:$1.1600 25:$1.2100 1:$1.3000
FQP8N60C DISTI # 512-FQP8N60C	ON Semiconductor	MOSFET 600V N-Ch Q-FET advance C-Series RoHS: Compliant	926	1:$1.8700 10:$1.5900 100:$1.2700 500:$1.1100 1000:$0.9250 2000:$0.8610 5000:$0.8290 10000:$0.7970
FQP8N60C_Q DISTI # 512-FQP8N60C_Q	ON Semiconductor	MOSFET 600V N-Ch Q-FET advance C-Series RoHS: Not compliant	0
FQP8N60C DISTI # 1095074	ON Semiconductor	MOSFET, N, TO-220 RoHS: Compliant	47	5:£1.1600 25:£1.0600 100:£0.8100 250:£0.7630 500:£0.7160
FQP8N60C DISTI # 1095074	ON Semiconductor	MOSFET, N, TO-220 RoHS: Compliant	52	1:$1.5100
FQP8N60C DISTI # XSFP00000021118	Fairchild Semiconductor Corporation	RoHS: Compliant	3365	1000:$1.8700 3365:$1.7000

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