SISH106DN-T1-GE3

Mfr. #:: SISH106DN-T1-GE3
製造商:: Vishay / Siliconix
描述:: MOSFET 20V Vds; +/-12V Vgs PowerPAK 1212-8SH
生命週期:: 製造商新產品
數據表:: SISH106DN-T1-GE3 數據表
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HTML Datasheet:: SISH106DN-T1-GE3 Datasheet SISH106DN-T1-GE3 Datasheet (P4-P6)SISH106DN-T1-GE3 Datasheet (P7)
ECAD Model:
更多信息:: SISH106DN-T1-GE3 更多信息

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: PowerPAK1212-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 20 V

Id - 連續漏極電流：: 19.5 A

Rds On - 漏源電阻：: 6.2 mOhms

Vgs th - 柵源閾值電壓：: 600 mV

Vgs - 柵源電壓：: 12 V

Qg - 門電荷：: 27 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 3.8 W

配置：: 單身的

頻道模式：: 增強

商品名：: TrenchFET、PowerPAK

打包：: 捲軸

系列：: 情報局

晶體管類型：: 1 N-Channel

品牌：: 威世 / Siliconix

正向跨導 - 最小值：: 105 S

秋季時間：: 12 ns

產品類別：: MOSFET

上升時間：: 15 ns

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 50 ns

典型的開啟延遲時間：: 25 ns

Tags: SISH10, SISH1, SISH, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISH106DN-T1-GE3 更多信息

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

型號	製造商	描述	庫存	價格
SISH106DN-T1-GE3 DISTI # V99:2348_22587809	Vishay Intertechnologies	N-Channel 20 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , m @ 10V m @ 7.5V 6.2 m @ 4.5V	6000	3000:$0.6717 1000:$0.7427 500:$0.9397 100:$1.0734 10:$1.4187 1:$1.8935
SISH106DN-T1-GE3 DISTI # SISH106DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHAN PPAK 1212-8SH RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5990In Stock	1000:$0.7778 500:$0.9387 100:$1.1426 10:$1.4220 1:$1.5800
SISH106DN-T1-GE3 DISTI # SISH106DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHAN PPAK 1212-8SH RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5990In Stock	1000:$0.7778 500:$0.9387 100:$1.1426 10:$1.4220 1:$1.5800
SISH106DN-T1-GE3 DISTI # SISH106DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHAN PPAK 1212-8SH RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	6000:$0.6944 3000:$0.7291
SISH106DN-T1-GE3 DISTI # 30744705	Vishay Intertechnologies	N-Channel 20 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , m @ 10V m @ 7.5V 6.2 m @ 4.5V	6000	3000:$0.7221 1000:$0.7984 500:$1.0102 100:$1.1539 10:$1.5251
SISH106DN-T1-GE3 DISTI # SISH106DN-T1-GE3	Vishay Intertechnologies	N-CH 20-V (D-S) FAST SWITCHING MOSFE - Tape and Reel (Alt: SISH106DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.6349 30000:$0.6529 18000:$0.6719 12000:$0.6999 6000:$0.7209
SISH106DN-T1-GE3 DISTI # 81AC3491	Vishay Intertechnologies	N-CH 20-V (D-S) FAST SWITCHING MOSFE	0	10000:$0.6300 6000:$0.6450 4000:$0.6700 2000:$0.7440 1000:$0.8190 1:$0.8540
SISH106DN-T1-GE3 DISTI # 99AC9579	Vishay Intertechnologies	MOSFET, N-CH, 20V, 12.5A, 150DEG C, 1.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:12.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0051ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V,RoHS Compliant: Yes	25	500:$0.9520 250:$1.0300 100:$1.1100 50:$1.2200 25:$1.3300 10:$1.4400 1:$1.7600
SISH106DN-T1-GE3 DISTI # 78-SISH106DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds,+/-12V Vgs PowerPAK 1212-8SH RoHS: Compliant	5890	1:$1.7300 10:$1.4200 100:$1.0900 500:$0.9420 1000:$0.7430 3000:$0.6940 6000:$0.6590 9000:$0.6340
SISH106DN-T1-GE3 DISTI # 3019125	Vishay Intertechnologies	MOSFET, N-CH, 20V, 12.5A, 150DEG C, 1.5W RoHS: Compliant	25	5000:$0.9520 1000:$0.9850 500:$1.2200 250:$1.3400 100:$1.4500 25:$1.8600 5:$2.0700
SISH106DN-T1-GE3 DISTI # 3019125	Vishay Intertechnologies	MOSFET, N-CH, 20V, 12.5A, 150DEG C, 1.5W	25	500:£0.6910 250:£0.7480 100:£0.8060 25:£1.0500 5:£1.1500

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