IPT059N15N3ATMA1

IPT059N15N3ATMA1
Mfr. #:
IPT059N15N3ATMA1
製造商:
Infineon Technologies
描述:
MOSFET MV POWER MOS
生命週期:
製造商新產品
數據表:
IPT059N15N3ATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
PG-HSOF-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
150 V
Id - 連續漏極電流:
155 A
Rds On - 漏源電阻:
5.9 mOhms
Vgs th - 柵源閾值電壓:
2 V
Vgs - 柵源電壓:
10 V
Qg - 門電荷:
69 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
375 W
配置:
單身的
頻道模式:
增強
商品名:
優化MOS
打包:
捲軸
高度:
2.4 mm
長度:
10.58 mm
系列:
OptiMOS 3
晶體管類型:
1 N-Channel
寬度:
10.1 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
86 S
秋季時間:
14 ns
產品類別:
MOSFET
上升時間:
35 ns
出廠包裝數量:
2000
子類別:
MOSFET
典型關斷延遲時間:
46 ns
典型的開啟延遲時間:
25 ns
第 # 部分別名:
IPT059N15N3 SP001100162
單位重量:
0.002293 oz
Tags
IPT05, IPT0, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 155 A, 150 V, 8-Pin HSOF Infineon IPT059N15N3ATMA1
***ure Electronics
Single N-Channel 150 V 5.9 mOhm 69 nC OptiMOS™ Power Mosfet - HSOF-8-1
***ical
Trans MOSFET N-CH 150V 155A Automotive 9-Pin(8+Tab) HSOF
***p One Stop Global
Trans MOSFET N-CH 150V 155A 9-Pin(8+Tab) HSOF T/R
***et Europe
Trans MOSFET N-CH 150V 155A 8-Pin HSOF T/R
***ark
MOSFET, N-CH, 150V, 115A, HSOF-8
***i-Key
MOSFET N-CH 150V 155A 8HSOF
***ronik
N-CH 150V 155A 5,9mOhm HSOF-8
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 150V, 115A, HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:115A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; Transistor Case Style:HSOF; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 150V, 115A, HSOF-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:115A; Tensione Drain Source Vds:150V; Resistenza di Attivazione Rds(on):0.005ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:375W; Modello Case Transistor:HSOF; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The new TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. | Summary of Features: Industrys lowest R DS(on); Highest current capability up to 300A; Very low package parasitics and inductances | Benefits: Less paralleling and cooling required; Highest system reliability; System cost reduction; Enabling very compact design | Target Applications: Forklift; Light electric vehicles (LEV) e.g. e-scooter, e-bikes or -car; Point-of-load (POL); Telecom; efuse
型號 製造商 描述 庫存 價格
IPT059N15N3ATMA1
DISTI # V36:1790_06377616
Infineon Technologies AGTrans MOSFET N-CH 150V 155A Automotive 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant
0
  • 2000000:$4.0860
  • 1000000:$4.0880
  • 200000:$4.2650
  • 20000:$4.5540
  • 2000:$4.6020
IPT059N15N3ATMA1
DISTI # V72:2272_06377616
Infineon Technologies AGTrans MOSFET N-CH 150V 155A Automotive 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant
0
    IPT059N15N3ATMA1
    DISTI # IPT059N15N3ATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 150V 155A 8HSOF
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)
    On Order
    • 2000:$3.8347
    IPT059N15N3ATMA1
    DISTI # IPT059N15N3ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 150V 155A 8HSOF
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$4.1017
    • 500:$4.7093
    • 100:$5.4081
    • 10:$6.5320
    • 1:$7.2300
    IPT059N15N3ATMA1
    DISTI # IPT059N15N3ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 150V 155A 8HSOF
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$4.1017
    • 500:$4.7093
    • 100:$5.4081
    • 10:$6.5320
    • 1:$7.2300
    IPT059N15N3ATMA1
    DISTI # IPT059N15N3ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 150V 155A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT059N15N3ATMA1)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 20000:$3.4900
    • 12000:$3.5900
    • 8000:$3.6900
    • 4000:$3.8900
    • 2000:$3.9900
    IPT059N15N3ATMA1
    DISTI # IPT059N15N3
    Infineon Technologies AGTrans MOSFET N-CH 150V 155A 8-Pin HSOF T/R (Alt: IPT059N15N3)
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape and Reel
    Asia - 0
    • 100000:$3.5561
    • 50000:$3.6017
    • 20000:$3.6484
    • 10000:$3.6965
    • 6000:$3.7963
    • 4000:$3.9018
    • 2000:$4.0133
    IPT059N15N3ATMA1
    DISTI # SP001100162
    Infineon Technologies AGTrans MOSFET N-CH 150V 155A 8-Pin HSOF T/R (Alt: SP001100162)
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape and Reel
    Europe - 0
    • 20000:€2.9900
    • 12000:€3.1900
    • 8000:€3.4900
    • 4000:€3.5900
    • 2000:€3.7900
    IPT059N15N3ATMA1
    DISTI # 50Y2080
    Infineon Technologies AGMOSFET, N-CH, 150V, 115A, 175DEG C, 375W,Transistor Polarity:N Channel,Continuous Drain Current Id:115A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1000:$3.8300
    • 500:$4.3900
    • 250:$4.8200
    • 100:$5.0500
    • 50:$5.4300
    • 25:$5.8200
    • 10:$6.1000
    • 1:$6.7500
    IPT059N15N3
    DISTI # 726-IPT059N15N3
    Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant
    0
    • 1:$6.6800
    • 10:$6.0400
    • 25:$5.7600
    • 100:$5.0000
    • 250:$4.7700
    • 500:$4.3500
    • 1000:$3.7900
    • 2000:$3.6500
    IPT059N15N3ATMA1
    DISTI # 726-IPT059N15N3ATMA1
    Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant
    0
    • 1:$6.6800
    • 10:$6.0400
    • 25:$5.7600
    • 100:$5.0000
    • 250:$4.7700
    • 500:$4.3500
    • 1000:$3.7900
    • 2000:$3.6500
    IPT059N15N3ATMA1
    DISTI # 2480870RL
    Infineon Technologies AGMOSFET, N-CH, 150V, 115A, HSOF-8
    RoHS: Compliant
    0
    • 100:$8.1500
    • 10:$9.8500
    • 1:$10.9000
    IPT059N15N3ATMA1
    DISTI # 2480870
    Infineon Technologies AGMOSFET, N-CH, 150V, 115A, HSOF-8
    RoHS: Compliant
    0
    • 100:$8.1500
    • 10:$9.8500
    • 1:$10.9000
    IPT059N15N3ATMA1
    DISTI # 2480870
    Infineon Technologies AGMOSFET, N-CH, 150V, 115A, HSOF-80
    • 100:£4.5400
    • 10:£5.2200
    • 1:£6.6400
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    ABM11W-20.0000MHZ-4-D1X-T3

    Mfr.#: ABM11W-20.0000MHZ-4-D1X-T3

    OMO.#: OMO-ABM11W-20-0000MHZ-4-D1X-T3-ABRACON

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    OMO.#: OMO-AXGD10603NR-LITTELFUSE

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    可用性
    庫存:
    Available
    訂購:
    3000
    輸入數量:
    IPT059N15N3ATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$6.68
    US$6.68
    10
    US$6.04
    US$60.40
    25
    US$5.76
    US$144.00
    100
    US$5.00
    US$500.00
    250
    US$4.77
    US$1 192.50
    500
    US$4.35
    US$2 175.00
    1000
    US$3.79
    US$3 790.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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