OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

IRLU120NPBF

IRLU120NPBF
Mfr. #:
IRLU120NPBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
生命週期:
製造商新產品
數據表:
IRLU120NPBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU120NPBF DatasheetIRLU120NPBF Datasheet (P4-P6)IRLU120NPBF Datasheet (P7-P9)IRLU120NPBF Datasheet (P10-P11)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-251-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
11 A
Rds On - 漏源電阻：
265 mOhms
Vgs - 柵源電壓：
16 V
Qg - 門電荷：
13.3 nC
Pd - 功耗：
39 W
配置：
單身的
打包：
管子
高度：
6.22 mm
長度：
6.73 mm
晶體管類型：
1 N-Channel
寬度：
2.38 mm
品牌：
英飛凌科技
產品類別：
MOSFET
出廠包裝數量：
3000
子類別：
MOSFET
第 # 部分別名：
SP001567330
單位重量：
0.139332 oz
Tags
IRLU120N, IRLU12, IRLU1, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W
***ure Electronics
Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***trelec
MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 48 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ment14 APAC
MOSFET, N, 100V, 11A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:10A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; On State resistance @ Vgs = 10V:185mohm; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK
***ark
MOSFET Transistor, N Channel, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
***r Electronics
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 100V, 10A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ical
Trans MOSFET N-CH 100V 10A 3-Pin (3+Tab) TO-251 Rail
***ser
MOSFETs 10a,100V, 0.165 Ohm 1Ch HS Logic Gate
***ter Electronics
PWR MOS 100V/11A/0.178 OHM N-CH LOGIC LVL TO-251AA
***SIT Distribution GmbH
Power Field-Effect Transistor, 10A I(D), 100V, 0.168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***eco
ADDED FOR DPP(INTERSIL) PKG ID CHANGE
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W
***ure Electronics
Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***SIT Distribution GmbH
Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48
***ment14 APAC
MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ohm; ID 17A; I-Pak (TO-251AA); PD 79W
***ure Electronics
Single N-Channel 100 V 105 mOhm 34 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***trelec
MOSFET Operating temperature: -55...+175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 79 W
***el Electronic
Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:15A; On Resistance Rds(On):0.105Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 100V, 15A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:100V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:52W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Junction to Case Thermal Resistance A:2.4°C/W; On State resistance @ Vgs = 10V:105mohm; Package / Case:IPAK; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W
***ineon SCT
-100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ure Electronics
Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK
***SIT Distribution GmbH
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***nell
MOSFET, P, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.205ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 66W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-251; Current Id Max: -13A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Length: 9.65mm; Lead Spacing: 2.28mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 52A; SMD Marking: IRFU5410PBF; Termination Type: Through Hole; Turn Off Time: 45ns; Turn On Time: 15ns; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V
***ure Electronics
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***ark
N Channel Mosfet, 100V, 7.7A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
*** Stop Electro
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
型號 製造商 描述 庫存 價格
IRLU120NPBF
DISTI # 26749316		Infineon Technologies AGTrans MOSFET N-CH Si 100V 10A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		12144
  • 2000:$0.2256
  • 400:$0.2496
  • 49:$0.2640
IRLU120NPBF
DISTI # 30606834		Infineon Technologies AGTrans MOSFET N-CH Si 100V 10A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2990
  • 100:$0.4577
  • 50:$0.5266
  • 38:$0.6770
IRLU120NPBF
DISTI # IRLU120NPBF-ND		Infineon Technologies AGMOSFET N-CH 100V 10A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		25In Stock
  • 1000:$0.3631
  • 500:$0.4539
  • 100:$0.6127
  • 10:$0.7940
  • 1:$0.9100
IRLU120NPBF
DISTI # C1S322000631854		Infineon Technologies AGTrans MOSFET N-CH Si 100V 10A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2990
  • 100:$0.3590
  • 50:$0.4130
  • 10:$0.5310
IRLU120NPBF
DISTI # C1S322000505249		Infineon Technologies AGTrans MOSFET N-CH Si 100V 10A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		12150
  • 1000:$0.3550
  • 500:$0.3870
  • 100:$0.4710
  • 50:$0.5280
  • 10:$0.7260
  • 1:$2.9000
IRLU120NPBF
DISTI # IRLU120NPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK (Alt: IRLU120NPBF)
RoHS: Compliant
Min Qty: 3000		Asia - 0
    IRLU120NPBF
    DISTI # IRLU120NPBF    		Infineon Technologies AGTrans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRLU120NPBF)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Americas - 0
    • 1:$0.4479
    • 10:$0.3939
    • 25:$0.3929
    • 50:$0.3919
    • 100:$0.3379
    • 500:$0.3379
    • 1000:$0.2629
    IRLU120NPBF
    DISTI # 38K3011    		Infineon Technologies AGMOSFET Transistor, N Channel, 10 A, 100 V, 185 mohm, 10 V, 2 V RoHS Compliant: Yes2865
    • 1:$0.7700
    • 10:$0.6400
    • 100:$0.4130
    • 500:$0.3720
    • 1000:$0.3310
    • 2500:$0.3000
    • 10000:$0.2690
    IRLU120NPBF
    DISTI # 70017413    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.185Ohm,ID 10A,I-Pak (TO-251AA),PD 48W
    RoHS: Compliant    		4
    • 1:$0.7750
    • 10:$0.6840
    • 100:$0.5960
    • 500:$0.5170
    • 1000:$0.4560
    IRLU120NPBFInfineon Technologies AGSingle N-Channel 100 V 0.265 Ohm 20 nC HEXFET Power Mosfet - TO-251AA
    RoHS: Compliant    		2175Tube
    • 40:$0.3300
    • 400:$0.2950
    • 1750:$0.2600
    IRLU120NPBF
    DISTI # 942-IRLU120NPBF    		Infineon Technologies AGMOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
    RoHS: Compliant    		316
    • 1:$0.7700
    • 10:$0.6400
    • 100:$0.4130
    • 1000:$0.3310
    IRLU120NPBFInternational RectifierPower Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant    		75
    • 1000:$0.2800
    • 500:$0.2900
    • 100:$0.3000
    • 25:$0.3200
    • 1:$0.3400
    IRLU120NPBF
    DISTI # 5431718    		Infineon Technologies AGMOSFET N-CHANNEL 100V 10A IPAK, PK2180
    • 5:£0.5960
    • 25:£0.3620
    • 100:£0.2400
    • 250:£0.2300
    • 500:£0.2260
    IRLU120NPBF
    DISTI # 8651345    		Infineon Technologies AGMOSFET, N, 100V, 11A, I-PAK
    RoHS: Compliant    		3026
    • 1:$1.2200
    • 10:$1.0200
    • 100:$0.6540
    • 1000:$0.5240
    • 3000:$0.4410
    • 9000:$0.4260
    • 24000:$0.4090
    IRLU120NPBF
    DISTI # 8651345    		Infineon Technologies AGMOSFET, N, 100V, 11A, I-PAK
    RoHS: Compliant    		2895
    • 5:£0.5560
    • 25:£0.3340
    • 100:£0.2450
    • 250:£0.2350
    • 500:£0.2310
    圖片 型號 描述
    LAN8741AI-EN

    Mfr.#: LAN8741AI-EN

    OMO.#: OMO-LAN8741AI-EN

    		 Ethernet ICs Small Footprint MII/RMII 10/100 Energy Efficient Ethernet Transceiver
    AD5687RBRUZ

    Mfr.#: AD5687RBRUZ

    OMO.#: OMO-AD5687RBRUZ

    		 Digital to Analog Converters - DAC 12B 2ch SPI nanoDAC+ with on-chip ref
    MB16S-TP

    Mfr.#: MB16S-TP

    OMO.#: OMO-MB16S-TP

    		 Schottky Diodes & Rectifiers 60V, 1A
    MIC6315-26D2UY-TR

    Mfr.#: MIC6315-26D2UY-TR

    OMO.#: OMO-MIC6315-26D2UY-TR

    		 Supervisory Circuits Reset Generator, Active Low, 2.63V VTH, Manual Reset
    CD74AC139M96

    Mfr.#: CD74AC139M96

    OMO.#: OMO-CD74AC139M96

    		 Encoders, Decoders, Multiplexers & Demultiplexers Line Decoder
    CD74AC04M96

    Mfr.#: CD74AC04M96

    OMO.#: OMO-CD74AC04M96

    		 Inverters Hex
    74VHCT14AM

    Mfr.#: 74VHCT14AM

    OMO.#: OMO-74VHCT14AM

    		 Inverters Hex Schmitt Inverter
    RN73C2A15KBTD

    Mfr.#: RN73C2A15KBTD

    OMO.#: OMO-RN73C2A15KBTD

    		 Thin Film Resistors - SMD RN 0805 15K 0.1% 1 0PPM 5KRL
    AD5687RBRUZ

    Mfr.#: AD5687RBRUZ

    OMO.#: OMO-AD5687RBRUZ-ANALOG-DEVICES-INC-ADI

    		 Digital to Analog Converters - DAC 12B 2ch SPI nanoDAC+ with on-chip ref
    LAN8741AI-EN

    Mfr.#: LAN8741AI-EN

    OMO.#: OMO-LAN8741AI-EN-MICROCHIP-TECHNOLOGY

    		 Ethernet ICs
    可用性
    庫存:
    Available
    訂購:
    1987
    輸入數量:
    IRLU120NPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.77
    US$0.77
    10
    US$0.64
    US$6.40
    100
    US$0.41
    US$41.30
    1000
    US$0.33
    US$331.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
    從...開始
    最新產品
    • XC6227 Series Regulator
      XC6227 Series Regulator
      Torex's XC6227 series is a high-speed LDO regulator with the ability to operate with high accuracy, low noise, and high ripple rejection.
    • XMC4700 and XMC4800 Family of Microcontrollers
      XMC4700 and XMC4800 Family of Microcontrollers
      Infineon Technologies’ XMC4700 and XMC4800 devices are members of the XMC4000 family of microcontrollers based on the ARM Cortex-M4 processor core.
    • Compare IRLU120NPBF
      Compare IRLU120NPBF
      IRLU120N vs IRLU120NPBF vs IRLU120NPBFLU120NIRLU1
    • TLF502x1EL Step-Down DC / DC
      TLF502x1EL Step-Down DC / DC
      Infineon's TLF502x1-family are asynchronous DC / DCs with integrated power transistor providing 500 mA output current at 5 V (±2%).
    • XC9261 Series Step-Down DC/DC Converters
      XC9261 Series Step-Down DC/DC Converters
      Torex's 1.5 A synchronous step-down DC/DC converter with high speed transient response control feature that provides excellent load transient response.
    • LITIX™ Automotive LED Driver ICs
      LITIX™ Automotive LED Driver ICs
      LITIX automotive LED driver ICs from Infineon use a constant-current regulator that enables stable brightness over the whole automotive temperature and voltage range.
    More Newest Products
    Top