IPS65R950C6AKMA1

IPS65R950C6AKMA1
Mfr. #:
IPS65R950C6AKMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 700V 4.5A IPAK-3
生命週期:
製造商新產品
數據表:
IPS65R950C6AKMA1 數據表
交貨:
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ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-251-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
650 V
Id - 連續漏極電流:
4.5 A
Rds On - 漏源電阻:
855 mOhms
Vgs th - 柵源閾值電壓:
2.5 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
15.3 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
37 W
配置:
單身的
頻道模式:
增強
商品名:
酷摩
打包:
管子
高度:
6.22 mm
長度:
6.73 mm
系列:
CoolMOS C6
晶體管類型:
1 N-Channel
寬度:
2.38 mm
品牌:
英飛凌科技
秋季時間:
13.6 ns
產品類別:
MOSFET
上升時間:
5.2 ns
出廠包裝數量:
1500
子類別:
MOSFET
典型關斷延遲時間:
41 ns
典型的開啟延遲時間:
6.6 ns
第 # 部分別名:
IPS65R950C6AKMA1 SP000991122
單位重量:
0.012102 oz
Tags
IPS65R, IPS65, IPS6, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 4.5A 3-Pin(3+Tab) TO-251 Tube
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO251-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ineon SCT
Trans MOSFET N-CH 700V 4.3A 3-Pin(3+Tab) TO-251 Tube, PG-TO251-3, RoHS
***ronik
N-CH 650V 4,3A 1000mOhm TO251SL
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***icroelectronics
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***el Electronic
STMICROELECTRONICS STU9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 5A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***icroelectronics
N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) IPAK Tube
***ark
Mosfet, N-Ch, 650V, 5.5A, 150Deg C; Transistor Polarity:n Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.71Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
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***icroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***et Europe
Trans MOSFET N-CH 650V 4.3A 3-Pin TO-251 Tube
***ronik
N-CH 600V 4,3A 1000mOhm TO251
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***emi
Power MOSFET 600V 5.9A 900mOhm Single N-Channel DPAK
***ical
Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK Tube
***ark
TUBE / NFET DPAK 600V 5.9A 900
型號 製造商 描述 庫存 價格
IPS65R950C6AKMA1
DISTI # IPS65R950C6AKMA1-ND
Infineon Technologies AGMOSFET N-CH 650V 4.5A TO-251
RoHS: Compliant
Min Qty: 1
Container: Tube
150In Stock
  • 100:$0.8110
  • 25:$0.9872
  • 10:$1.0400
  • 1:$1.1600
IPS65R950C6AKMA1
DISTI # IPS65R950C6AKMA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Bulk (Alt: IPS65R950C6AKMA1)
Min Qty: 715
Container: Bulk
Americas - 0
  • 7150:$0.4439
  • 3575:$0.4519
  • 2145:$0.4679
  • 1430:$0.4859
  • 715:$0.5039
IPS65R950C6
DISTI # 726-IPS65R950C6
Infineon Technologies AGMOSFET N-Ch 700V 4.5A IPAK-3
RoHS: Compliant
1465
  • 1:$1.1100
  • 10:$0.9410
  • 100:$0.7220
  • 500:$0.6390
  • 1000:$0.5040
IPS65R950C6AKMA1
DISTI # 726-IPS65R950C6AKMA1
Infineon Technologies AGMOSFET N-Ch 700V 4.5A IPAK-3
RoHS: Compliant
0
    IPS65R950C6AKMA1Infineon Technologies AGPower Bipolar Transistor
    RoHS: Compliant
    35
    • 1000:$0.4600
    • 500:$0.4900
    • 100:$0.5100
    • 25:$0.5300
    • 1:$0.5700
    圖片 型號 描述
    IPS65R950C6AKMA1

    Mfr.#: IPS65R950C6AKMA1

    OMO.#: OMO-IPS65R950C6AKMA1

    MOSFET N-Ch 700V 4.5A IPAK-3
    IPS65R950C6

    Mfr.#: IPS65R950C6

    OMO.#: OMO-IPS65R950C6-1190

    Trans MOSFET N-CH 700V 4.5A 3-Pin(3+Tab) TO-251
    IPS65R950C6AKMA1

    Mfr.#: IPS65R950C6AKMA1

    OMO.#: OMO-IPS65R950C6AKMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 650V 4.5A TO-251
    可用性
    庫存:
    Available
    訂購:
    3000
    輸入數量:
    IPS65R950C6AKMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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