MRF8P29300HR6

Mfr. #:: MRF8P29300HR6
製造商:: NXP / Freescale
描述:: RF MOSFET Transistors HV8 300W 50V NI1230
生命週期:: 製造商新產品
數據表:: MRF8P29300HR6 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 MOSFET 晶體管

RoHS：: Y

晶體管極性：: N通道

技術：: 矽

Vds - 漏源擊穿電壓：: 65 V

獲得：: 13.3 dB

輸出功率：: 320 W

最高工作溫度：: + 150 C

安裝方式：: 貼片/貼片

包裝/案例：: NI-1230

打包：: 捲軸

配置：: 雙重的

工作頻率：: 2.7 GHz to 2.9 GHz

系列：: MRF8P29300H

品牌：: 恩智浦/飛思卡爾

產品類別：: 射頻 MOSFET 晶體管

出廠包裝數量：: 150

子類別：: MOSFET

Vgs - 柵源電壓：: 10 V

Vgs th - 柵源閾值電壓：: 1.9 V

第 # 部分別名：: 935319706128

單位重量：: 0.465355 oz

Tags: MRF8P29, MRF8P2, MRF8P, MRF8, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF8P29300HR6 描述

***escale Semiconductor: Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V

***W: RF Power Transistor,2700 to 2900 MHz, 320 W, Typ Gain in dB is 13.3 @ 2900 MHz, 30 V, LDMOS, SOT1787

***ponent Stockers USA: 2 CHANNEL S BAND Si N-CHANNEL RF POWER MOSFET

***nsix Microsemi: 2-Element S Band Silicon N-Channel Metal-oxide Semiconductor FET

***ical: Trans RF MOSFET N-CH 65V 4-Pin T/R

***el Electronic: RF MOSFET Transistors HV8 300W 50V NI1230

***escale Semiconductor: Airfast RF Power LDMOS Transistor, 1805-1995 MHz 63 W Avg., 28 V

***W: RF Power Transistor,1805 to 1995 MHz, 263 W, Typ Gain in dB is 18.2 @ 1960 MHz, 28 V, LDMOS, SOT1801

***et: Transistor RF FET N-CH 65V 1805MHz to 1995MHz 6-Pin NI−880XS T/R

*** Electronic Components: RF MOSFET Transistors AF1 1.8GHZ NI-880X-2L4S

***DA Technology Co., Ltd.: Product Description Demo for Development.

***i-Key: FET RF 65V 1.96GHZ NI-880X-2L4S

***escale Semiconductor: Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 50 W Avg., 28 V

***W: RF Power Transistor,1805 to 1880 MHz, 207 W, Typ Gain in dB is 19 @ 1880 MHz, 28 V, LDMOS, SOT1799

***et: Trans MOSFET N-CH -0.5V/65V 6-Pin NI-780S T/R

***el Electronic: RF MOSFET Transistors AF 1.8GHZ 230W NI780S-6

***DA Technology Co., Ltd.: Product Description Demo for Development.

*** Semiconductors SCT: Airfast RF Power LDMOS Transistor, 1805-2170 MHz 6.3 W Avg., 28 V, FM4F, RoHS

***W: RF Power Transistor,1805 to 2170 MHz, 60 W, Typ Gain in dB is 18.9 @ 2170 MHz, 28 V, LDMOS, SOT1818

***p One Stop Global: Trans RF MOSFET N-CH 65V 5-Pin OM-780 EP

***el Electronic: Transistors RF MOSFET AF1 2GHz 60W OM780-4

***i-Key: FET RF 2CH 65V 2.17GHZ OM780-4

Market price

型號	製造商	描述	庫存	價格
MRF8P29300HR6 DISTI # V36:1790_07204136	NXP Semiconductors	Trans RF MOSFET N-CH 65V 4-Pin T/R RoHS: Compliant	0
MRF8P29300HR6 DISTI # MRF8P29300HR6-ND	NXP Semiconductors	FET RF 2CH 65V 2.9GHZ NI1230 RoHS: Compliant Min Qty: 150 Container: Tape & Reel (TR)	Temporarily Out of Stock	150:$360.4667
MRF8P29300HR6 DISTI # MRF8P29300HR6	Avnet, Inc.	Trans MOSFET N-CH 65V 4-Pin NI-1230 T/R (Alt: MRF8P29300HR6) RoHS: Compliant Min Qty: 150 Container: Tape and Reel	Europe - 0	1500:€314.2900 900:€325.1900 600:€336.7900 300:€349.2900 150:€362.6900
MRF8P29300HR6 DISTI # MRF8P29300HR6	Avnet, Inc.	Trans MOSFET N-CH 65V 4-Pin NI-1230 T/R - Tape and Reel (Alt: MRF8P29300HR6) RoHS: Compliant Min Qty: 150 Container: Reel	Americas - 0	1500:$344.7900 900:$351.4900 600:$364.6900 300:$379.4900 150:$394.9900
MRF8P29300HR6 DISTI # 841-MRF8P29300HR6	NXP Semiconductors	RF MOSFET Transistors HV8 300W 50V NI1230 RoHS: Compliant	0	150:$346.9400
MRF8P29300HR6 DISTI # MRF8P29300HR6	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	4	150:$345.5600

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