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FDMC8010ET30

FDMC8010ET30
Mfr. #:
FDMC8010ET30
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET FET 30V 1.3 MOHM PQFN33
生命週期:
製造商新產品
數據表:
FDMC8010ET30 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
FDMC8010ET30 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
Power-33-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
174 A
Rds On - 漏源電阻：
1.3 mOhms
Vgs th - 柵源閾值電壓：
1.2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
67 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
65 W
配置：
單身的
頻道模式：
增強
商品名：
PowerTrench 電源夾
打包：
捲軸
高度：
0.8 mm
長度：
3.3 mm
系列：
FDMC8010ET30
晶體管類型：
1 N-Channel
寬度：
3.3 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
188 S
秋季時間：
5.3 ns
產品類別：
MOSFET
上升時間：
7.5 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
40 ns
典型的開啟延遲時間：
15 ns
單位重量：
0.005386 oz
Tags
FDMC8010, FDMC801, FDMC80, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel PowerTrench® MOSFET 30V, 174A, 1.3mΩ
***et
Transistor MOSFET N-CH 30V 174A 8-Pin Power 33 T/R
***r Electronics
Power Field-Effect Transistor, 174A I(D), 174V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***ark
Mosfet, N-Ch, 30V, 174A, 65W, Power 33; Transistor Polarity:n Channel; Continuous Drain Current Id:174A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0009Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
***emi
N-Channel Power Trench® MOSFET 30 V, 1.23 mΩ
***ment14 APAC
MOSFET, N-CH, 185A, 30V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:185A; Source Voltage Vds:30V; On Resistance
***r Electronics
Power Field-Effect Transistor, 185A I(D), 30V, 0.00123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N-CH, 185A, 30V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 185A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00096ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.3V; Power Dissipation Pd: 64W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 30 V, 0.00081 Ohm typ., 220 A STripFET H7 Power MOSFET in a PowerFLAT 5x6 package
***ure Electronics
N-Channel 30 V 0.0011 O 46 nC 113 W STripFET VII Power MosFet - PowerFLAT(5 x 6)
***ical
Trans MOSFET N-CH 30V 220A 8-Pin Power Flat EP T/R
***ronik
N-CH 30V 220A 1,1mOhm PwFLAT5x6
***el Electronic
IC REG LIN POS ADJ 150MA SOT23-5
***ineon SCT
30V, N-Ch, 1.05 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS
***ical
Trans MOSFET N-CH 30V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
*** Source Electronics
Trans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R / MOSFET N-CH 25V 38A DIRECTFET
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
N CH MOSFET, 25V, 38A, DIRECTFET MX; Tra; N CH MOSFET, 25V, 38A, DIRECTFET MX; Transistor Polarity:(Not Available); Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.8V
***ical
Trans MOSFET N-CH 25V 35A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 35 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N-CH, 25V, 213A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 213A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 800µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance; Integrated Monolithic Sckottky Diode | Target Applications: MultiPhase SyncFET
***icroelectronics
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
*** Source Electronics
Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5
***ure Electronics
N-Channel 30 V 1.75 mOhm Surface Mount STripFET™ V MosFet - PowerFLAT 5x6
***ark
Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型號 製造商 描述 庫存 價格
FDMC8010ET30
DISTI # V72:2272_16119273		ON SemiconductorN-CHANNEL POWERTRENCH MOSFET,5628
  • 3000:$0.7974
  • 1000:$0.8323
  • 500:$0.9725
  • 250:$1.1096
  • 100:$1.1555
  • 25:$1.2971
  • 10:$1.4412
  • 1:$1.8659
FDMC8010ET30
DISTI # V36:1790_16119273		ON SemiconductorN-CHANNEL POWERTRENCH MOSFET,0
  • 3000000:$0.6743
  • 1500000:$0.6747
  • 300000:$0.7193
  • 30000:$0.8057
  • 3000:$0.8206
FDMC8010ET30
DISTI # FDMC8010ET30CT-ND		ON SemiconductorMOSFET N-CH 30V 30A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2358In Stock
  • 1000:$0.9078
  • 500:$1.0956
  • 100:$1.3336
  • 10:$1.6590
  • 1:$1.8500
FDMC8010ET30
DISTI # FDMC8010ET30DKR-ND		ON SemiconductorMOSFET N-CH 30V 30A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2358In Stock
  • 1000:$0.9078
  • 500:$1.0956
  • 100:$1.3336
  • 10:$1.6590
  • 1:$1.8500
FDMC8010ET30
DISTI # FDMC8010ET30TR-ND		ON SemiconductorMOSFET N-CH 30V 30A 8-PQFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$0.7902
  • 3000:$0.8206
FDMC8010ET30
DISTI # 26623752		ON SemiconductorN-CHANNEL POWERTRENCH MOSFET,9000
  • 9000:$0.7346
  • 6000:$0.7455
  • 3000:$0.7742
FDMC8010ET30
DISTI # 25924334		ON SemiconductorN-CHANNEL POWERTRENCH MOSFET,5628
  • 3000:$0.7974
  • 1000:$0.8323
  • 500:$0.9725
  • 250:$1.1096
  • 100:$1.1555
  • 25:$1.2971
  • 10:$1.4412
  • 8:$1.8659
FDMC8010ET30
DISTI # FDMC8010ET30		ON SemiconductorMOSFET N-Channel PowerTrench MOSFET, PowerClip 33 Single - Tape and Reel (Alt: FDMC8010ET30)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7139
  • 18000:$0.7319
  • 12000:$0.7419
  • 6000:$0.7509
  • 3000:$0.7559
FDMC8010ET30
DISTI # FDMC8010ET30		ON SemiconductorMOSFET N-Channel PowerTrench MOSFET, PowerClip 33 Single (Alt: FDMC8010ET30)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 30000:€0.7319
  • 18000:€0.7739
  • 12000:€0.8059
  • 6000:€0.8719
  • 3000:€1.0479
FDMC8010ET30
DISTI # 01AC8546		ON SemiconductorFET 30V 1.3 MOHM PQFN33 / REEL0
  • 1000:$1.0400
  • 500:$1.1200
  • 250:$1.2100
  • 100:$1.3400
  • 1:$1.6600
FDMC8010ET30
DISTI # 512-FDMC8010ET30		ON SemiconductorMOSFET FET 30V 1.3 MOHM PQFN33
RoHS: Compliant		7876
  • 1:$1.7100
  • 10:$1.4500
  • 100:$1.1600
  • 500:$1.0200
  • 1000:$0.8400
  • 3000:$0.7820
  • 6000:$0.7530
  • 9000:$0.7240
FDMC8010ET30
DISTI # 2992330		ON SemiconductorMOSFET, N-CH, 30V, 174A, 65W, POWER 333000
  • 500:£0.7390
  • 250:£0.7890
  • 100:£0.8380
  • 10:£1.0900
  • 1:£1.4100
FDMC8010ET30
DISTI # XSFP00000116121		Fairchild Semiconductor Corporation 
RoHS: Compliant		24000 in Stock0 on Order
  • 24000:$1.0300
  • 3000:$1.1000
FDMC8010ET30
DISTI # 2992330		ON SemiconductorMOSFET, N-CH, 30V, 174A, 65W, POWER 33
RoHS: Compliant		3000
  • 1000:$1.1100
  • 500:$1.3100
  • 250:$1.4200
  • 100:$1.5300
  • 25:$1.9500
  • 5:$2.1600
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可用性
庫存:
Available
訂購:
1990
輸入數量:
FDMC8010ET30的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.71
US$1.71
10
US$1.45
US$14.50
100
US$1.16
US$116.00
500
US$1.02
US$510.00
1000
US$0.84
US$840.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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