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IXTQ170N10P

IXTQ170N10P
Mfr. #:
IXTQ170N10P
製造商:
Littelfuse
描述:
MOSFET 170 Amps 100V 0.009 Ohm Rds
生命週期:
製造商新產品
數據表:
IXTQ170N10P 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IXTQ170N10P DatasheetIXTQ170N10P Datasheet (P4-P5)
ECAD Model:
產品屬性
屬性值
製造商：
IXYS
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-3P-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
170 A
Rds On - 漏源電阻：
9 mOhms
Vgs - 柵源電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
714 W
配置：
單身的
頻道模式：
增強
打包：
管子
高度：
20.3 mm
長度：
15.8 mm
系列：
IXTQ170N10
晶體管類型：
1 N-Channel
寬度：
4.9 mm
品牌：
IXYS
秋季時間：
33 ns
產品類別：
MOSFET
上升時間：
50 ns
出廠包裝數量：
30
子類別：
MOSFET
典型關斷延遲時間：
90 ns
典型的開啟延遲時間：
35 ns
單位重量：
0.194007 oz
Tags
IXTQ1, IXTQ, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-3P
***ark
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:170A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Termination ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-3P; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 15V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 714W; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Capacitance Ciss Typ: 6000pF; Current Id Max: 170A; Junction to Case Thermal Resistance A: 0.21°C/W; N-channel Gate Charge: 198nC; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Reverse Recovery Time trr Max: 120ns; Termination Type: Through Hole; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W
***ure Electronics
Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
N Channel Mosfet, 100V, 130A, To-220Ab; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ark
Mosfet Transistor, N Channel, 180 A, 100 V, 0.0025 Ohm, 15 V, 4 V
***ical
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220 Tube
***emi
Power MOSFET, 100V, 3.0mΩ, 180A, N-Channel
***nell
MOSFET, N-CH, 100V, 180A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 15V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 200W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
N-CHANNEL 75V - 0.0065 OHM -120A TO-220 STripFET II MOSFET
***ure Electronics
N-Channel 75 V 7.5 mO Flange Mount STripFET™III Power MosFet - TO-220
***ical
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 75V 120A UltraFET III TO220
***nell
MOSFET, N CH, 75V, 120A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0078Ohm;ID 130A;TO-220AB;PD 330W;VGS +/-20
***ure Electronics
Single N-Channel 75 V 7.8 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***eco
MOSFET, 75V, 130A, 7.8 MOHM, 160 NC QG, TO-220AB
***Yang
Trans MOSFET N-CH 80V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ment14 APAC
MOSFET, N, 75V, 130A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:7.8ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:520A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***icroelectronics
N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
*** Source Electronics
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N CH 100V 180A TO-220
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0023Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Msl:- Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
型號 製造商 描述 庫存 價格
IXTQ170N10P
DISTI # V36:1790_15876307		IXYS CorporationTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-3P
RoHS: Compliant		20
  • 2500:$4.0480
  • 1000:$4.7080
  • 500:$4.9660
  • 250:$5.4580
  • 100:$5.9860
  • 50:$6.1730
  • 25:$6.6620
  • 10:$7.9230
  • 1:$8.7760
IXTQ170N10P
DISTI # IXTQ170N10P-ND		IXYS CorporationMOSFET N-CH 100V 170A TO-3P
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.8677
IXTQ170N10P
DISTI # 32022822		IXYS CorporationTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-3P
RoHS: Compliant		20
  • 2500:$4.0480
  • 1000:$4.7080
  • 500:$4.9660
  • 250:$5.4580
  • 100:$5.9860
  • 50:$6.1730
  • 25:$6.6620
  • 10:$7.9230
  • 2:$8.7760
IXTQ170N10P
DISTI # 31673116		IXYS CorporationTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-3P
RoHS: Compliant		10
  • 2500:$4.2816
  • 1000:$4.9920
  • 500:$5.2320
  • 250:$5.7408
  • 100:$6.2880
  • 50:$6.4320
  • 25:$6.9216
  • 10:$8.3232
  • 3:$9.2448
IXTQ170N10P
DISTI # 747-IXTQ170N10P		IXYS CorporationMOSFET 170 Amps 100V 0.009 Ohm Rds
RoHS: Compliant		730
  • 1:$9.6300
  • 10:$8.6700
  • 25:$6.8600
  • 50:$6.7000
  • 100:$6.5500
  • 250:$5.9800
  • 500:$5.4500
  • 1000:$5.2000
IXTQ170N10P
DISTI # IXTQ170N10P		IXYS CorporationTransistor: N-MOSFET,Polar™,unipolar,100V,170A,715W,TO3P26
  • 1:$7.1300
  • 3:$6.4200
  • 10:$5.6700
  • 30:$5.0900
IXTQ170N10P
DISTI # 1427383		IXYS CorporationMOSFET, N, TO-3P
RoHS: Compliant		0
  • 1000:$7.8400
  • 500:$8.2100
  • 250:$9.0100
  • 100:$9.8700
  • 50:$10.1000
  • 25:$10.3400
  • 10:$13.0700
  • 1:$14.5100
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可用性
庫存:
679
訂購:
2662
輸入數量:
IXTQ170N10P的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$9.63
US$9.63
10
US$8.67
US$86.70
25
US$6.86
US$171.50
50
US$6.70
US$335.00
100
US$6.55
US$655.00
250
US$5.98
US$1 495.00
500
US$5.45
US$2 725.00
1000
US$5.20
US$5 200.00
2500
US$4.46
US$11 150.00
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