FDR8308P

Mfr. #:: FDR8308P
製造商:: ON Semiconductor
描述:: MOSFET 2P-CH 20V 3.2A SSOT-8
生命週期:: 製造商新產品
數據表:: FDR8308P 數據表
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HTML Datasheet:: FDR8308P Datasheet FDR8308P Datasheet (P4-P5)
ECAD Model:

產品屬性
屬性值

Tags: FDR8308, FDR830, FDR83, FDR8, FDR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDR8308P 描述

***et: TRANS MOSFET P-CH 20V 3.2A 8PIN SUPERSOT

***ark: MOSFET; Transistor Polarity:Dual P Channel; Continuous Drain Current, Id:3.2A; On-Resistance, Rds(on):0.05ohm; Package/Case:SuperSOT-8; Drain-Source Breakdown Voltage:-20V; Gate-Source Voltage:-1.5V; Leaded Process Compatible:No RoHS Compliant: No

***nell: MOSFET, DUAL, PP, SUPERSOT-8; Transistor type:MOSFET; Current, Id cont:3.2A; Resistance, Rds on:0.05ohm; Case style:SuperSOT-8; Current, Idm pulse:20A; Marking, SMD:FDR8308P; Pins, No. of:8; Power dissipation:0.8W; Power, Pd:0.8W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:Dual P; Transistors, No. of:2; Voltage, Vds:20V; Voltage, Vds max:20V; Voltage, Vgs th max:-1.5V

***ure Electronics: Si2323DS Series 20 V 3.7 A 39 mOhm Surface Mount P-Channel Mosfet - SOT-23-3

***(Formerly Allied Electronics): MOSFET, Power,P-Ch,VDSS -20V,RDS(ON) 0.031Ohm,ID -3.7A,TO-236 (SOT-23),PD 0.75W

*** Source Electronics: MOSFET P-CH 20V 3.7A SOT23-3 / Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R

***enic: 20V 3.7A 39m´Î@4.5V4.7A 750mW 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ment14 APAC: MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-4.7A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V

***ark: P Channel Mosfet, -20V, 4.7A To-236, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.039Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No

*** Source Electronics: Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.6A SOT-23

***ure Electronics: Single P-Channel 20 V 0.81 W 15.4 nC Silicon Surface Mount Mosfet - SOT-23

***ment14 APAC: MOSFET, P-CH, -20V, -3.6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Source Voltage Vds:-20V; On Resistance

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.81 W

***nell: MOSFET, P-CH, -20V, -3.6A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.6A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 810mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***enic: 20V 3.7A 39m´Î@4.5V4.7A 750mW 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ure Electronics: Single P-Channel 20 V 0.039 O 19 nC Surface Mount Power Mosfet - SOT-23

***roFlash: Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-4700mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.068ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V ;RoHS Compliant: Yes

***nell: MOSFET, P CH, 20V, 4.7A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.039ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:750mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; Operating Temperature Range:-55°C to +150°C

***roFlash: P-Channel 20 V 42.5 mO Surface Mount Enhancement Mode Mosfet - SOT-23

***ment14 APAC: MOSFET,P CH,20V,4A,SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-20V; On Resistance

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.9 W

***nell: MOSFET,P CH,20V,4A,SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -550mV; Power Dissipation Pd: 900mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -4A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: -8V

***emi: Power MOSFET 20V 5.9A 36 mOhm Single P-Channel WDFN6 with ESD

***Yang: Trans MOSFET P-CH 20V 5.9A 6-Pin WDFN T/R - Tape and Reel

***r Electronics: Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-5.9A; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ

*** Source Electronics: Trans MOSFET P-CH 20V 4A 6-Pin TSOT-23 T/R / MOSFET P-CH 20V 4A 6SSOT

***ment14 APAC: MOSFET, P-CH, -20V, -4A, SOT-23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-20V; On Resistance

***el Electronic: Chip Resistor - Surface Mount 820Ohm 1% 200 ppm/°C Thick Film Tape & Reel 1 (Unlimited) Thick Film Resistors - SMD 0402 1% 820ohm Anti-Sulfur AEC-Q200

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

Market price

型號	製造商	描述	庫存	價格
FDR8308P DISTI # FDR8308PTR-ND	ON Semiconductor	MOSFET 2P-CH 20V 3.2A SSOT-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDR8308P DISTI # FDR8308PCT-ND	ON Semiconductor	MOSFET 2P-CH 20V 3.2A SSOT-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDR8308P DISTI # FDR8308PDKR-ND	ON Semiconductor	MOSFET 2P-CH 20V 3.2A SSOT-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDR8308P DISTI # FDR8308P	ON Semiconductor	TRANS MOSFET P-CH 20V 3.2A 8PIN SUPERSOT - Bulk (Alt: FDR8308P) Min Qty: 1137 Container: Bulk	Americas - 0	11370:$0.2709 5685:$0.2779 3411:$0.2819 2274:$0.2849 1137:$0.2869
FDR8308P DISTI # 512-FDR8308P	ON Semiconductor	MOSFET SSOT-8 P-CH DUAL -20 RoHS: Compliant	0
FDR8308P	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 3.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	18650	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600

相關產品

圖片	型號	描述
	Mfr.#: FDR838P OMO.#: OMO-FDR838P	MOSFET SSOT-8 P-CH -20V
	Mfr.#: FDR8305N_NL OMO.#: OMO-FDR8305N-NL-1190	全新原裝
	Mfr.#: FDR8308P-NL OMO.#: OMO-FDR8308P-NL-1190	全新原裝
	Mfr.#: FDR838P OMO.#: OMO-FDR838P-ON-SEMICONDUCTOR	MOSFET P-CH 20V 8A SSOT-8
	Mfr.#: FDR838P , 1N5251B-TAP OMO.#: OMO-FDR838P-1N5251B-TAP-1190	全新原裝
	Mfr.#: FDR840P-ND(FDS840P) OMO.#: OMO-FDR840P-ND-FDS840P--1190	全新原裝
	Mfr.#: FDR840P-NL OMO.#: OMO-FDR840P-NL-1190	全新原裝
	Mfr.#: FDR840P. OMO.#: OMO-FDR840P--1190	全新原裝
	Mfr.#: FDR842T OMO.#: OMO-FDR842T-1190	全新原裝
	Mfr.#: FDR858P OMO.#: OMO-FDR858P-ON-SEMICONDUCTOR	MOSFET P-CH 30V 8A SSOT-8

可用性

庫存:: Available
訂購:: 5500
輸入數量:

FDR8308P的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.41~~; ~~US$0.41~~

10: ~~US$0.39~~; ~~US$3.86~~

100: ~~US$0.37~~; ~~US$36.57~~

500: ~~US$0.35~~; ~~US$172.70~~

1000: ~~US$0.33~~; ~~US$325.10~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

FDR8308 3
FDR830 6
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FDR8 33
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FDR8308P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes