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FDPF12N50UT

FDPF12N50UT
Mfr. #:
FDPF12N50UT
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 500V 10A N-Chan Ultra FRFET
生命週期:
製造商新產品
數據表:
FDPF12N50UT 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220FP-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
500 V
Id - 連續漏極電流：
10 A
Rds On - 漏源電阻：
650 mOhms
Vgs th - 柵源閾值電壓：
5 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
21 nC
Pd - 功耗：
42 W
配置：
單身的
商品名：
單場效應晶體管
打包：
管子
高度：
16.07 mm
長度：
10.36 mm
系列：
FDPF12N50UT
晶體管類型：
1 N-Channel
寬度：
4.9 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
11 S
秋季時間：
35 ns
產品類別：
MOSFET
上升時間：
45 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
60 ns
典型的開啟延遲時間：
35 ns
單位重量：
0.080072 oz
Tags
FDPF12N5, FDPF12, FDPF1, FDPF, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM, 500V, 10A, 800mΩ, TO-220F
***Yang
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 10A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
***nell
MOSFET, N, TO-220F; Transistor Polarity:N; Max Current Id:5.3A; Max Voltage Vds:500V; On State Resistance:0.73ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:50W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220F; No. of Pins:3; SVHC 2:Cobalt dichloride; Case Style:TO-220F; Cont Current Id:5.3A; Power Dissipation Pd:50W; Pulse Current Idm:21A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:500V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
***emi
N-Channel QFET® MOSFET 500V, 9A, 800mΩ
*** Electronics
N-CHANNEL POWER MOSFET
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F
***ure Electronics
FDPF12N60NZ Series 600 V 12 A 650 mOhm N-Ch PowerTrench® MOSFET - TO-220F
***Yang
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
600V 12A 39W 650m´Î@10V6A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 600V, 0.53OHM, 12A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; MSL:- ;RoHS Compliant: Yes
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***itex
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 35W; -55+150 deg.C; THT; TO220FP
***icroelectronics
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 10A TO220FP
***fin
Transistor NPN MOS STP10NK60/STP10NK60ZFP SGS THOMSON Ampere=10 V=600 TO220
***ure Electronics
N-Channel 600 V 0.75 Ohm Flange Mount SuperMESH™ Power MosFet - TO-220-FP
***enic
600V 10A 35W 750m´Î@10V4.5A 4.5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ark
N CHANNEL MOSFET, 600V, 10A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:-RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
*** Electronics
STMICROELECTRONICS STF10N62K3 Power MOSFET, N Channel, 8.4 A, 620 V, 0.68 ohm, 10 V, 3.75 V
***et
Trans MOSFET N-CH 620V 8.4A 3-Pin(3+Tab) TO-220FP Tube
***ponent Stockers USA
8.4 A 620 V 0.75 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 620V, 8.4A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:30W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
***icroelectronics
N-channel 600 V, 0.53 Ohm, 10 A Zener-protected SuperMESH(TM)2 Power MOSFET in a TO-220FP package
***ical
Trans MOSFET N-CH 600V 10A 3-Pin (3+Tab) TO-220FP Tube
***ure Electronics
N-Channel 650 V 0.64 O SuperMESH™ Power MosFet - TO-220FP
***ponent Stockers USA
10 A 600 V 0.64 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 10A I(D), 600V, 0.64ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 650V, 10A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):530mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Package / Case:TO-220FP; Power Dissipation Pd:35W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V
型號 製造商 描述 庫存 價格
FDPF12N50UT
DISTI # 26962129		ON Semiconductor500V, 10A, 0.8 OHM, N-CHANNEL5000
  • 1000:$0.9750
FDPF12N50UT
DISTI # FDPF12N50UT-ND		ON SemiconductorMOSFET N-CH 500V TO-220F-3
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.2441
FDPF12N50UT
DISTI # FDPF12N50UT		ON SemiconductorTrans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FDPF12N50UT)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.0189
  • 2000:$1.0119
  • 4000:$0.9999
  • 6000:$0.9869
  • 10000:$0.9619
FDPF12N50UTFairchild Semiconductor CorporationPower Field-Effect Transistor, 10A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		15000
  • 1000:$1.1500
  • 500:$1.2100
  • 100:$1.2600
  • 25:$1.3100
  • 1:$1.4100
FDPF12N50UT
DISTI # 512-FDPF12N50UT		ON SemiconductorMOSFET 500V 10A N-Chan Ultra FRFET
RoHS: Compliant		955
  • 1:$2.3000
  • 10:$1.9500
  • 100:$1.5600
  • 500:$1.3700
  • 1000:$1.1400
  • 2000:$1.0600
  • 5000:$1.0200
FDPF12N50UT
DISTI # 8648587P		ON SemiconductorMOSFET N-CH 500V 10A UNIFET ULTRA TO220F, TU345
  • 50:£1.2780
  • 100:£1.1680
  • 250:£1.1020
  • 500:£1.0740
FDPF12N50UT
DISTI # 8648587		ON SemiconductorMOSFET N-CH 500V 10A UNIFET ULTRA TO220F, PK105
  • 5:£1.5620
  • 50:£1.2780
  • 100:£1.1680
  • 250:£1.1020
  • 500:£1.0740
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Mfr.#: STB45N65M5

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Mfr.#: STF13NM60N

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Mfr.#: FQP19N20

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可用性
庫存:
898
訂購:
2881
輸入數量:
FDPF12N50UT的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.51
US$1.51
10
US$1.28
US$12.80
100
US$1.02
US$102.00
500
US$0.90
US$450.00
1000
US$0.74
US$745.00
2000
US$0.69
US$1 388.00
5000
US$0.67
US$3 340.00
10000
US$0.64
US$6 420.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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