FQPF10N60C

Mfr. #:: FQPF10N60C
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 600V N-Ch Q-FET advance C-Series
生命週期:: 製造商新產品
數據表:: FQPF10N60C 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: E

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 9.5 A

Rds On - 漏源電阻：: 730 mOhms

Vgs - 柵源電壓：: 30 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 50 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

高度：: 16.3 mm

長度：: 10.67 mm

系列：: FQPF10N60C

晶體管類型：: 1 N-Channel

類型：: MOSFET

寬度：: 4.7 mm

品牌：: 安森美半導體/飛兆半導體

秋季時間：: 77 ns

產品類別：: MOSFET

上升時間：: 69 ns

出廠包裝數量：: 1000

子類別：: MOSFET

典型關斷延遲時間：: 144 ns

典型的開啟延遲時間：: 23 ns

第 # 部分別名：: FQPF10N60C_NL

單位重量：: 0.080072 oz

Tags: FQPF10N60C, FQPF10N60, FQPF10N6, FQPF10, FQPF1, FQPF, FQP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQPF10N60C 描述

***Semiconductor: Power MOSFET, N-Channel, QFET®, 600 V, 9.5 A, 730 mΩ, TO-220F

***ical: Trans MOSFET N-CH 600V 9.5A 3-Pin(3+Tab) TO-220F Rail

***o-Tech: Trans MOSFET N-CH 600V 9.5A 3- TO-220F

*** Source Electronics: MOSFET N-CH 600V 9.5A TO-220F

***ser: MOSFETs 600V N-Ch Q-FET advance C-Series

***inecomponents.com: 600V N-Channel Advance QFET® C-Series

***ark: RAIL / N-CH/600V/10A/QFET C-Series

***ter Electronics: N-CH/600V/10A/QFET C-Series

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Market price

型號	製造商	描述	庫存	價格
FQPF10N60C DISTI # FQPF10N60C-ND	ON Semiconductor	MOSFET N-CH 600V 9.5A TO-220F RoHS: Compliant Min Qty: 1 Container: Tube	946In Stock	1000:$1.3299 500:$1.6051 100:$2.0637 10:$2.5680 1:$2.8400
FQPF10N60CYDTU DISTI # FQPF10N60CYDTU-ND	ON Semiconductor	MOSFET N-CH 600V 9.5A TO-220F RoHS: Compliant Min Qty: 800 Container: Tube	Limited Supply - Call
FQPF10N60CF DISTI # FQPF10N60CF-ND	ON Semiconductor	MOSFET N-CH 600V 9A TO-220F RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
FQPF10N60CT DISTI # FQPF10N60CT-ND	ON Semiconductor	MOSFET N-CH 600V 9.5A TO-220F RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
FQPF10N60C_F105 DISTI # FQPF10N60C_F105-ND	ON Semiconductor	IC POWER MANAGEMENT RoHS: Compliant Min Qty: 1 Container: Bulk	Limited Supply - Call
FQPF10N60C DISTI # FQPF10N60C	ON Semiconductor	Trans MOSFET N-CH 600V 9.5A 3-Pin TO-220F Tube (Alt: FQPF10N60C) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.5759 10:€1.2889 25:€1.1019 50:€0.9999 100:€0.9849 500:€0.9689 1000:€0.9549
FQPF10N60C DISTI # FQPF10N60C	ON Semiconductor	Trans MOSFET N-CH 600V 9.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF10N60C) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.9469 2000:$0.9409 4000:$0.9289 6000:$0.9169 10000:$0.8949
FQPF10N60C DISTI # 84H4755	ON Semiconductor	TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9.5A I(D),TO-220AB(FP) ROHS COMPLIANT: YES	0	1:$2.4500 10:$2.0800 100:$1.6700 500:$1.5500 1000:$1.3900 2500:$1.1200 5000:$1.0900
FQPF10N60C_F105 DISTI # 01AC8770	ON Semiconductor	FQPF10N60C_F105	0	1:$2.0500 10:$1.7400 100:$1.4000 500:$1.3000 1000:$1.1600 2500:$0.9360 5000:$0.9080
FQPF10N60C	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	29177	1000:$1.3400 500:$1.4100 100:$1.4700 25:$1.5300 1:$1.6500
FQPF10N60CYDTU	Fairchild Semiconductor Corporation	RoHS: Not Compliant	549	1000:$0.8200 500:$0.8600 100:$0.8900 25:$0.9300 1:$1.0000
FQPF10N60C DISTI # 512-FQPF10N60C	ON Semiconductor	MOSFET 600V N-Ch Q-FET advance C-Series RoHS: Compliant	171	1:$2.5500 10:$2.1700 100:$1.7400 500:$1.5200 1000:$1.2600 2000:$1.1700 5000:$1.1300
FQPF10N60CT DISTI # 512-FQPF10N60CT	ON Semiconductor	MOSFET N-CH/600V/10A QFET C-Series RoHS: Compliant	0
FQPF10N60CF DISTI # 512-FQPF10N60CF	ON Semiconductor	MOSFET 600V N-Ch MOSFET RoHS: Compliant	0
FQPF10N60C_F105 DISTI # 512-FQPF10N60C_F105	ON Semiconductor	MOSFET N-CH/600V/10A/QFET C-Series	0
FQPF10N60CYDTU DISTI # 512-FQPF10N60CYDTU	ON Semiconductor	MOSFET 600V N-Channel Adv Q-FET C-Series RoHS: Compliant	0

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