BSM180D12P3C007

BSM180D12P3C007
Mfr. #:
BSM180D12P3C007
製造商:
Rohm Semiconductor
描述:
SIC POWER MODULE
生命週期:
製造商新產品
數據表:
BSM180D12P3C007 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
BSM180D12P3C007 更多信息
產品屬性
屬性值
Tags
BSM180D, BSM180, BSM18, BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C ROHM BSM180D12P3C007
***p One Stop Japan
Trans MOSFET N-CH SiC 1.2KV 180A Automotive 10-Pin Tray
***ical
Trans MOSFET N-CH SiC 1.2KV 180A 10-Pin Tray
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 180A C-
***et Europe
SiC Power Module-1200V-180A
***i-Key
SIC POWER MODULE
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
型號 製造商 描述 庫存 價格
BSM180D12P3C007
DISTI # 33952734
ROHM SemiconductorBSM180D12P3C00712
  • 1:$866.2500
BSM180D12P3C007
DISTI # BSM180D12P3C007-ND
ROHM SemiconductorSIC POWER MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk
26In Stock
  • 1:$525.7100
BSM180D12P3C007
DISTI # C1S625901693441
ROHM SemiconductorTrans MOSFET N-CH SiC 1.2KV 180A Automotive 10-Pin Tray
RoHS: Compliant
12
  • 10:$601.0000
  • 5:$630.0000
  • 1:$693.0000
BSM180D12P3C007
DISTI # BSM180D12P3C007
ROHM SemiconductorSiC Power Module-1200V-180A (Alt: BSM180D12P3C007)
RoHS: Compliant
Min Qty: 1
Europe - 8
  • 1:€490.1900
BSM180D12P3C007
DISTI # BSM180D12P3C007
ROHM SemiconductorSiC Power Module-1200V-180A - Trays (Alt: BSM180D12P3C007)
RoHS: Compliant
Min Qty: 12
Container: Tray
Americas - 0
    BSM180D12P3C007
    DISTI # 755-BSM180D12P3C007
    ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
    RoHS: Compliant
    31
    • 1:$506.9700
    BSM180D12P3C007ROHM Semiconductor 9
    • 7:$693.0750
    • 5:$739.2800
    • 1:$808.5875
    BSM180D12P3C007
    DISTI # TMOSP12817
    ROHM SemiconductorSiC Power Module 180A 1200V
    RoHS: Compliant
    Stock DE - 16Stock HK - 0Stock US - 0
    • 12:$589.5700
    BSM180D12P3C007
    DISTI # BSM180D12P3C007
    ROHM SemiconductorSiC-N-Ch-Half-Bridge+2xSBD 1200V 180A C-
    RoHS: Compliant
    1
    • 1:€540.0000
    • 4:€480.0000
    • 8:€450.0000
    • 12:€435.0000
    BSM180D12P3C007ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
    RoHS: Compliant
    Americas -
      BSM180D12P3C007ROHM SemiconductorRoHS(ship within 1day)12
      • 1:$509.7300
      • 10:$491.3900
      • 50:$476.7200
      • 100:$469.3900
      • 500:$465.7200
      • 1000:$462.0500
      圖片 型號 描述
      BSM180D12P3C007

      Mfr.#: BSM180D12P3C007

      OMO.#: OMO-BSM180D12P3C007

      Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
      BSM180D12P2C101

      Mfr.#: BSM180D12P2C101

      OMO.#: OMO-BSM180D12P2C101

      Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
      BSM180D12P3C007

      Mfr.#: BSM180D12P3C007

      OMO.#: OMO-BSM180D12P3C007-ROHM-SEMI

      SIC POWER MODULE
      BSM180D12P3C007 , TDZTR6

      Mfr.#: BSM180D12P3C007 , TDZTR6

      OMO.#: OMO-BSM180D12P3C007-TDZTR6-1190

      全新原裝
      BSM180D12P2E002

      Mfr.#: BSM180D12P2E002

      OMO.#: OMO-BSM180D12P2E002-1190

      IPM Intelligent Power Module SIC-DMOSFET/SIC-SBD 204A 2500V 11-Pin Tray (Alt: BSM180D12P2E002)
      BSM180D12P2C101

      Mfr.#: BSM180D12P2C101

      OMO.#: OMO-BSM180D12P2C101-ROHM-SEMI

      Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
      可用性
      庫存:
      Available
      訂購:
      1000
      輸入數量:
      BSM180D12P3C007的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$741.48
      US$741.48
      10
      US$704.40
      US$7 044.03
      100
      US$667.33
      US$66 732.95
      500
      US$630.26
      US$315 127.85
      1000
      US$593.18
      US$593 181.80
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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