FCMT299N60

Mfr. #:: FCMT299N60
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET SF2 600V 299MOHM F PQFN88
生命週期:: 製造商新產品
數據表:: FCMT299N60 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: FCMT299N60 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: Power-88-4

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 12 A

Rds On - 漏源電阻：: 299 mOhms

Vgs th - 柵源閾值電壓：: 3.5 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 39 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 125 W

配置：: 單身的

商品名：: 超級場效應晶體管 II

打包：: 捲軸

高度：: 1.1 mm

長度：: 8 mm

系列：: FCMT299N60

晶體管類型：: 1 N-Channel

寬度：: 8 mm

品牌：: 安森美半導體/飛兆半導體

正向跨導 - 最小值：: 12 S

秋季時間：: 7 ns

產品類別：: MOSFET

上升時間：: 9 ns

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 51 ns

典型的開啟延遲時間：: 19 ns

單位重量：: 0.015839 oz

Tags: FCMT, FCM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCMT299N60 描述

***emi: N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 12 A, 299 mΩ, Power88

***ical: Trans MOSFET N-CH 600V 12A 4-Pin Power 88 EP T/R

***ark: TAPE REEL / PQFN88 PKG, 199mohm, 600V, SuperFET2

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as server/telecom power, adaptor and solar inverter applications.The Power88 package is an ultra-slim surface-mount package (1 mm high) with a low profile and small footprint (8x8 mm2). SuperFET II MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1).

FCMT299N60 更多信息

SuperFET® II Power MOSFETs: ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More

Market price

型號	製造商	描述	庫存	價格
FCMT299N60 DISTI # V36:1790_06337774	ON Semiconductor	PQFN88 PKG, 199MOHM, 600V, SUP	0	3000000:$0.9974 1500000:$0.9987 300000:$1.0620 30000:$1.1520 3000:$1.1660
FCMT299N60 DISTI # V72:2272_06337774	ON Semiconductor	PQFN88 PKG, 199MOHM, 600V, SUP	0
FCMT299N60 DISTI # FCMT299N60TR-ND	ON Semiconductor	MOSFET N-CH 600V 12A POWER88 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	6000:$1.1233 3000:$1.1665
FCMT299N60 DISTI # FCMT299N60CT-ND	ON Semiconductor	MOSFET N-CH 600V 12A POWER88 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.2905 500:$1.5574 100:$1.8956 10:$2.3580 1:$2.6300
FCMT299N60 DISTI # FCMT299N60DKR-ND	ON Semiconductor	MOSFET N-CH 600V 12A POWER88 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.2905 500:$1.5574 100:$1.8956 10:$2.3580 1:$2.6300
FCMT299N60 DISTI # FCMT299N60	ON Semiconductor	Trans MOSFET N-CH 600V 12A 4-Pin Power 88 T/R - Tape and Reel (Alt: FCMT299N60) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$1.0149 18000:$1.0409 12000:$1.0549 6000:$1.0679 3000:$1.0749
FCMT299N60 DISTI # FCMT299N60	ON Semiconductor	Trans MOSFET N-CH 600V 12A 4-Pin Power 88 T/R (Alt: FCMT299N60) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.9539 18000:€1.0219 12000:€1.0999 6000:€1.1919 3000:€1.4309
FCMT299N60 DISTI # 40Y7271	ON Semiconductor	SF2 600V 299MOHM F PQFN88 / REEL	0	1:$1.4300
FCMT299N60 DISTI # 99AC9139	ON Semiconductor	MOSFET, N-CH, 12A, 600V, PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power Dissipation RoHS Compliant: Yes	0	1000:$1.2000 500:$1.4500 250:$1.5600 100:$1.6600 50:$1.7900 25:$1.9300 10:$2.0700 1:$2.4400
FCMT299N60 DISTI # 512-FCMT299N60	ON Semiconductor	MOSFET SF2 600V 299MOHM F PQFN88 RoHS: Compliant	0	1:$2.4200 10:$2.0500 100:$1.6400 500:$1.4400 1000:$1.1900 3000:$1.1100 6000:$1.0600
FCMT299N60 DISTI # 3018889	ON Semiconductor	MOSFET, N-CH, 12A, 600V, PQFN	0	500:£1.1200 250:£1.1500 100:£1.1900 10:£1.4800 1:£1.9800
FCMT299N60 DISTI # 3018889	ON Semiconductor	MOSFET, N-CH, 12A, 600V, PQFN RoHS: Compliant	0	1000:$1.8900 500:$2.2900 250:$2.5500 100:$2.7400 10:$3.3600 1:$4.3900

相關產品

圖片	型號	描述
	Mfr.#: STL33N60DM2 OMO.#: OMO-STL33N60DM2	MOSFET N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
	Mfr.#: STL22N65M5 OMO.#: OMO-STL22N65M5	MOSFET N-Ch 650V .198Ohm 15A MDmesh M5
	Mfr.#: STL22N65M5 OMO.#: OMO-STL22N65M5-STMICROELECTRONICS	MOSFET N CH 650V 15A PWRFLT8X8HV
	Mfr.#: STL33N60DM2 OMO.#: OMO-STL33N60DM2-STMICROELECTRONICS	N-CHANNEL 600 V, 0.115 OHM TYP.,