FP50R12KT4PBPSA1

Mfr. #:: FP50R12KT4PBPSA1
製造商:: Infineon Technologies
描述:: IGBT Modules LOW POWER ECONO
生命週期:: 製造商新產品
數據表:: FP50R12KT4PBPSA1 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT 模塊

RoHS：: Y

技術：: 矽

產品：: IGBT 矽模塊

配置：: 3-Phase

集電極-發射極電壓 VCEO 最大值：: 1200 V

集電極-發射極飽和電壓：: 1.85 V

25 C 時的連續集電極電流：: 50 A

柵極-發射極漏電流：: 100 nA

包裝/案例：: EconoPIM2

最低工作溫度：: - 40 C

最高工作溫度：: + 150 C

打包：: 托盤

品牌：: 英飛凌科技

安裝方式：: 底盤安裝

最大柵極發射極電壓：: 20 V

產品類別：: IGBT 模塊

出廠包裝數量：: 10

子類別：: IGBT

商品名：: 經濟PIM

第 # 部分別名：: FP50R12KT4P SP001255990

Tags: FP50R12KT4, FP50R12KT, FP50R12K, FP50R1, FP50R, FP50, FP5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FP50R12KT4PBPSA1 描述

***et: EconoPIM 2 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC

***i-Key: MOD IGBT LOW PWR ECONO2-4

***ark: Igbt, Module, N-Ch, 1.2Kv, 50A; Transistor Polarity:n Channel; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 50A; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EconoPIM 2 Series; SVHC:No SVHC (27-Jun-2018)

***nell: IGBT, MODULO, CA-N, 1.2KV, 50A; Polarità Transistor:Canale N; Corrente di Collettore CC:50A; Tensione Saturaz Collettore-Emettitore Vce(on):1.85V; Dissipazione di Potenza Pd:-; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EconoPIM 2 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: EconoPIM 2 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material. | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon

Market price

型號	製造商	描述	庫存	價格
FP50R12KT4PBPSA1 DISTI # FP50R12KT4PBPSA1-ND	Infineon Technologies AG	MOD IGBT LOW PWR ECONO2-4 RoHS: Compliant Min Qty: 10 Container: Tray	Temporarily Out of Stock	10:$97.4430
FP50R12KT4PBPSA1 DISTI # SP001255990	Infineon Technologies AG	EconoPIM 2 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC (Alt: SP001255990) RoHS: Compliant Min Qty: 1	Europe - 6725	1000:€75.0900 500:€80.3900 100:€83.3900 50:€86.5900 25:€90.0900 10:€93.8900 1:€102.3900
FP50R12KT4PBPSA1 DISTI # FP50R12KT4PBPSA1	Infineon Technologies AG	EconoPIM 2 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC - Trays (Alt: FP50R12KT4PBPSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	100:$79.7900 60:$81.7900 40:$83.8900 20:$85.9900 10:$87.1900
FP50R12KT4PBPSA1 DISTI # 34AC1530	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 50A,Transistor Polarity:N Channel,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes	19	100:$90.3800 50:$93.7300 25:$97.0700 10:$100.4100 5:$105.1500 1:$107.1200
FP50R12KT4PBPSA1 DISTI # 726-FP50R12KT4PBPSA1	Infineon Technologies AG	IGBT Modules LOW POWER ECONO RoHS: Compliant	3	1:$106.0600 5:$104.1100 10:$99.4200 25:$96.1100
FP50R12KT4PBPSA1 DISTI # 2781247	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 50A RoHS: Compliant	19	10:$142.6100 5:$147.7100 1:$153.1800
FP50R12KT4PBPSA1 DISTI # 2781247	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 50A	19	10:£73.3300 5:£79.4400 1:£80.9200
FP50R12KT4PBPSA1 DISTI # XSKDRABV0044104	Infineon Technologies AG	1608 (0603) RoHS: Compliant	4895 in Stock0 on Order	4895:$118.5500 10:$127.0200

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