IPB015N08N5ATMA1

Mfr. #:: IPB015N08N5ATMA1
製造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET N-Ch 80V 180A D2PAK-2
生命週期:: 製造商新產品
數據表:: IPB015N08N5ATMA1 數據表
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更多信息:: IPB015N08N5ATMA1 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

打包: 捲軸

部分別名: IPB015N08N5 SP001226034

單位重量: 0.056438 oz

安裝方式: 貼片/貼片

包裝盒: TO-263-7

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 375 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 28 ns

上升時間: 32 ns

VGS-柵極-源極-電壓: +/- 20 V

Id 連續漏極電流: 180 A

Vds-漏-源-擊穿電壓: 80 V

VGS-th-Gate-Source-Threshold-Voltage: 2.2 V

Rds-On-Drain-Source-Resistance: 1.8 mOhms

晶體管極性: N通道

典型關斷延遲時間: 83 ns

典型開啟延遲時間: 33 ns

Qg-門電荷: 178 nC

正向跨導最小值: 123 S

通道模式: 增強

Tags: IPB015N08, IPB015, IPB01, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB015N08N5ATMA1 描述

***ical: Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R

***ure Electronics: IPB015N08N5 Series 80 V 180 A OptiMOS 5 Power Transistor - PG-TO-263-7

***ark: Mosfet, N-Ch, 80V, 180A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0011Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPB015N08N5ATMA1 更多信息

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Market price

型號	製造商	描述	庫存	價格
IPB015N08N5ATMA1 DISTI # IPB015N08N5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$3.5163
IPB015N08N5ATMA1 DISTI # IPB015N08N5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$4.2944 100:$5.3033 10:$6.4670 1:$7.2400
IPB015N08N5ATMA1 DISTI # IPB015N08N5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$4.2944 100:$5.3033 10:$6.4670 1:$7.2400
IPB015N08N5ATMA1 DISTI # IPB015N08N5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB015N08N5ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.1900 2000:$3.0900 4000:$2.9900 6000:$2.8900 10000:$2.8900
IPB015N08N5ATMA1 DISTI # SP001226034	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: SP001226034) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€3.0900 2000:€2.8900 4000:€2.7900 6000:€2.5900 10000:€2.3900
IPB015N08N5ATMA1 DISTI # 13AC9020	Infineon Technologies AG	MOSFET, N-CH, 80V, 180A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	500:$3.8000 250:$4.2300 100:$4.4600 50:$4.6900 25:$4.9100 10:$5.1400 1:$6.0500
IPB015N08N5ATMA1 DISTI # 726-IPB015N08N5ATMA1	Infineon Technologies AG	MOSFET N-Ch 80V 180A D2PAK-2 RoHS: Compliant	44	1:$6.0500 10:$5.1400 100:$4.4600 250:$4.2300 500:$3.8000 1000:$3.2000
IPB015N08N5ATMA1 DISTI # 2725833	Infineon Technologies AG	MOSFET, N-CH, 80V, 180A, TO-263 RoHS: Compliant	0	500:$6.8500 100:$8.4600 10:$10.3100 1:$11.5400
IPB015N08N5ATMA1 DISTI # 2725833	Infineon Technologies AG	MOSFET, N-CH, 80V, 180A, TO-263 RoHS: Compliant	0	500:£2.9000 250:£3.2300 100:£3.4000 10:£3.9300 1:£5.1000

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