SI3973DV-T1-GE3

SI3973DV-T1-GE3
Mfr. #:
SI3973DV-T1-GE3
製造商:
Vishay / Siliconix
描述:
RF Bipolar Transistors MOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
生命週期:
製造商新產品
數據表:
SI3973DV-T1-GE3 數據表
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更多信息:
SI3973DV-T1-GE3 更多信息
產品屬性
屬性值
製造商
威世 / Siliconix
產品分類
晶體管 - FET、MOSFET - 單
打包
捲軸
部分別名
SI3973DV-GE3
單位重量
0.000705 oz
安裝方式
貼片/貼片
包裝盒
TSOP-6
技術
通道數
2 Channel
配置
雙重的
晶體管型
2 P-Channel
鈀功耗
830 mW
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
VGS-柵極-源極-電壓
8 V
Id 連續漏極電流
2.4 A
Vds-漏-源-擊穿電壓
- 12 V
Rds-On-Drain-Source-Resistance
87 mOhms
晶體管極性
P-通道
Tags
SI397, SI39, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型號 製造商 描述 庫存 價格
SI3973DV-T1-GE3
DISTI # 781-SI3973DV-GE3
Vishay IntertechnologiesMOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$0.3500
  • 6000:$0.3330
  • 9000:$0.3210
  • 24000:$0.3100
圖片 型號 描述
SI3973DV-T1-E3

Mfr.#: SI3973DV-T1-E3

OMO.#: OMO-SI3973DV-T1-E3

MOSFET 12V 2.7A 0.83W
SI3973DV-T1-GE3

Mfr.#: SI3973DV-T1-GE3

OMO.#: OMO-SI3973DV-T1-GE3

MOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
SI3973DV-T1-E3

Mfr.#: SI3973DV-T1-E3

OMO.#: OMO-SI3973DV-T1-E3-317

RF Bipolar Transistors MOSFET 12V 2.7A 0.83W
SI3973DV-T1-GE3

Mfr.#: SI3973DV-T1-GE3

OMO.#: OMO-SI3973DV-T1-GE3-317

RF Bipolar Transistors MOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
SI3973DV

Mfr.#: SI3973DV

OMO.#: OMO-SI3973DV-1190

全新原裝
可用性
庫存:
Available
訂購:
1500
輸入數量:
SI3973DV-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.46
US$0.46
10
US$0.44
US$4.42
100
US$0.42
US$41.85
500
US$0.40
US$197.65
1000
US$0.37
US$372.00
從...開始
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