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NTR4502PT3G

NTR4502PT3G
Mfr. #:
NTR4502PT3G
製造商:
ON Semiconductor
描述:
MOSFET -30V -1.95A P-Channel
生命週期:
製造商新產品
數據表:
NTR4502PT3G 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
NTR4502PT3G DatasheetNTR4502PT3G Datasheet (P4-P5)
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SOT-23-3
通道數：
1 Channel
晶體管極性：
P-通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
1.95 A
Rds On - 漏源電阻：
240 mOhms
Vgs - 柵源電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
1.25 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
高度：
0.94 mm
長度：
2.9 mm
產品：
MOSFET 小信號
晶體管類型：
1 P-Channel
類型：
MOSFET
寬度：
1.3 mm
品牌：
安森美半導體
正向跨導 - 最小值：
3 S
秋季時間：
12 ns
產品類別：
MOSFET
上升時間：
12 ns
出廠包裝數量：
10000
子類別：
MOSFET
典型關斷延遲時間：
19 ns
典型的開啟延遲時間：
5.2 ns
單位重量：
0.000282 oz
Tags
NTR4502PT, NTR4502P, NTR4502, NTR45, NTR4, NTR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Single P-Channel Power MOSFET -30V -1.95A 200mΩ
***ical
Trans MOSFET P-CH 30V 1.13A 3-Pin SOT-23 T/R
***r Electronics
Small Signal Field-Effect Transistor, 1.95A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-1.95A; On Resistance, Rds(on):155mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:3-SOT-23 ;RoHS Compliant: Yes
***ure Electronics
ZXM61N03F Series 30 V 1.4 A 220 mOhm N-Channel Enhancement Mode Mosfet-SOT-23-3
***C
Trans MOSFET N-CH 30V 3-Pin SOT-23 T/R Trans MOSFET N-CH 30V 3-Pin SOT-23 T/R
***nell
MOSFET, N SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:1.4A; Resistance, Rds On:0.22ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.3A; No. of Pins:3; Power, Pd:625W; Power, Ptot:625W; Quantity, Reel:3000; Resistance, Rds on Max:0.22ohm; SMD Marking:N03; Temperature, Current:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V; Voltage, Vgs th Min:1V; Width, Tape:8mm
***emi
N-Channel, PowerTrench® MOSFET, Logic Level, 30V, 1.4A, 110mΩ
*** Source Electronics
Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.4A SSOT3
***nell
MOSFET, N CH, 30V, 1.4A, SOT-23-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V;
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
*** Source Electronics
Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 1.1A SSOT3
***emi
-30V P-Channel Logic Level Enhancement Mode Field Effect Transistor
***nell
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.6V; Power Dissipatio
***ment14 APAC
MOSFET, P SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):300mohm; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23 (TO-236); Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS356AP; Tape Width:8mm; Termination Type:SMD; Voltage Vgs th Max:-2.5V
***rchild Semiconductor
SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
***ure Electronics
Single N-Channel 30 V 160 mOhm 0.6 nC OptiMOS™ Small Signal Mosfet - SOT-23
***p One Stop Global
Trans MOSFET N-CH 30V 1.4A Automotive 3-Pin SOT-23 T/R
***el Electronic
30V 1.4A 500mW 160mΩ@10V,1.4A [email protected] N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.4 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 160 / Gate-Source Voltage V = 20 / Fall Time ns = 1 / Rise Time ns = 2.3 / Turn-OFF Delay Time ns = 5.8 / Turn-ON Delay Time ns = 3.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
***ure Electronics
ZXMP3A13 Series 30 V 0.21 Ohm P-Channel Enhancement Mode MOSFET - SOT-23-3
***C
Trans MOSFET P-CH 30V 1.6A 3-Pin SOT-23 T/R
***ark
MOSFET, P CHANNEL, 30V, -1.6A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
***nell
MOSFET, P, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.21ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 806mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -1.6A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 210mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Pulse Current Idm: 6A; SMD Marking: 313; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Max: -20V; Voltage Vgs Rds on Measurement: -10V; Voltage Vgs th Min: -1V
***ure Electronics
ZXM61P03F 30 V 0.35 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23
***ow.cn
Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R
***(Formerly Allied Electronics)
MOSFET P-Channel 30V HDMOS SOT23
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***S
French Electronic Distributor since 1988
***nell
MOSFET, P SOT-23 REEL 3K; Transistor Polarity:P; Max Current Id:-1.1A; Max Voltage Vds:30V; On State Resistance:0.35ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:-20V; Power Dissipation:625mW; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:1.1A; Current Temperature:25°C; Max Junction Temperature Tj:150°C; Max On State Resistance:0.35ohm; Max Power Dissipation Ptot:625W; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:-1V; No. of Transistors:1; Power Dissipation Pd:625W; Pulse Current Idm:4.3A; Reel Quantity:3000; SMD Marking:P03; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:-30V; Typ Voltage Vgs th:-1V; Voltage Vgs Rds on Measurement:-10V
型號 製造商 描述 庫存 價格
NTR4502PT3G
DISTI # VAH:2490_17820135		ON SemiconductorTrans MOSFET P-CH 30V 1.13A 3-Pin SOT-23 T/R
RoHS: Compliant		3359
  • 2500:$0.1690
  • 1000:$0.2060
  • 500:$0.2340
  • 100:$0.3190
  • 25:$0.4670
  • 1:$0.6400
NTR4502PT3G
DISTI # NTR4502PT3G-ND		ON SemiconductorMOSFET P-CH 30V 1.13A SOT-23
RoHS: Compliant
Min Qty: 10000
Container: Tape & Reel (TR)		Limited Supply - Call
    NTR4502PT3G
    DISTI # 26077813    		ON SemiconductorTrans MOSFET P-CH 30V 1.13A 3-Pin SOT-23 T/R
    RoHS: Compliant    		3359
    • 2500:$0.1690
    • 1000:$0.2060
    • 500:$0.2340
    • 100:$0.3190
    • 25:$0.4670
    • 10:$0.6400
    NTR4502PT3G
    DISTI # 863-NTR4502PT3G    		ON SemiconductorMOSFET -30V -1.95A P-Channel
    RoHS: Compliant    		0
      NTR4502PT3
      DISTI # 863-NTR4502PT3      		ON SemiconductorMOSFET -30V -1.95A
      RoHS: Not compliant      		0
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        可用性
        庫存:
        Available
        訂購:
        4000
        輸入數量:
        NTR4502PT3G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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