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FCPF650N80Z

FCPF650N80Z
Mfr. #:
FCPF650N80Z
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET SF2 800V 650MOHM E TO220F
生命週期:
製造商新產品
數據表:
FCPF650N80Z 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
FCPF650N80Z 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220FP-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
800 V
Id - 連續漏極電流：
8 A
Rds On - 漏源電阻：
650 mOhms
Vgs th - 柵源閾值電壓：
4.5 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
27 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
30.5 W
配置：
單身的
商品名：
超級場效應晶體管 II
打包：
管子
高度：
16.07 mm
長度：
10.36 mm
系列：
FCPF650N80Z
晶體管類型：
1 N-Channel
寬度：
4.9 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
3.4 ns
產品類別：
MOSFET
上升時間：
11 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
40 ns
典型的開啟延遲時間：
17 ns
單位重量：
0.080072 oz
Tags
FCPF6, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220F
*** Stop Electro
Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***Yang
Trans MOSFET N-CH 800V 8A 3-Pin TO-220F Tube - Rail/Tube
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
***ineon SCT
Single N-Channel 600 V 460 mOhm 28 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
***ical
Trans MOSFET N-CH 600V 13.1A 3-Pin(3+Tab) TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 13.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.1A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F
***ark
SuperFET2, 600mohm, TO220F, Zener - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
*** Stop Electro
Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***Yang
Trans MOSFET N-CH 600V 7.4A 3-Pin TO-220F Tube - Rail/Tube
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, TO-220F
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220F Rail
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
***ineon SCT
Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
***ow.cn
Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 600V, 9.9A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 10 A, 750 mΩ, TO-220F
***itex
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 38W; -55+150 deg.C; THT; TO220F
*** Source Electronics
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 10A TO-220F
***ark
RAIL/UNIFET2 600V N-CHANNEL MOSFET, TO220F SINGLE GAUGE
***nell
MOSFET, N-CHANNEL, 600V, 10A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***roFlash
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***el Electronic
VISHAY SIHF7N60E-E3 MOSFET Transistor, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
***ure Electronics
SiHF7N60E Series 600 V 7 A 31 W Through Hole Power Mosfet - TO-220FP
***et
Trans MOSFET N-CH 600V 7A 3-Pin TO-220 Full-Pak
***nell
MOSFET, N-CH, 600V, 7A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
型號 製造商 描述 庫存 價格
FCPF650N80Z
DISTI # V79:2366_17795829		ON SemiconductorSUPERFET2 800V 650MOHM ZENER282
  • 10000:$0.7546
  • 5000:$0.7923
  • 2000:$0.8315
  • 1000:$0.9016
  • 500:$1.0962
  • 100:$1.2604
  • 10:$1.5897
  • 1:$2.0623
FCPF650N80Z
DISTI # V99:2348_06359854		ON SemiconductorSUPERFET2 800V 650MOHM ZENER0
  • 1000000:$0.8495
  • 500000:$0.8499
  • 100000:$0.8937
  • 10000:$0.9782
  • 1000:$0.9927
FCPF650N80Z
DISTI # V36:1790_06359854		ON SemiconductorSUPERFET2 800V 650MOHM ZENER0
  • 1000000:$0.7902
  • 500000:$0.7907
  • 100000:$0.8505
  • 10000:$0.9716
  • 1000:$0.9927
FCPF650N80Z
DISTI # FCPF650N80Z-ND		ON SemiconductorMOSFET N-CH 800V 8A TO220F
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.9927
FCPF650N80Z
DISTI # 26119025		ON SemiconductorSUPERFET2 800V 650MOHM ZENER282
  • 13:$2.0623
FCPF650N80Z
DISTI # FCPF650N80Z		ON SemiconductorTrans MOSFET N-CH 800V 8A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF650N80Z)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.8039
  • 6000:$0.8249
  • 4000:$0.8349
  • 2000:$0.8459
  • 1000:$0.8519
FCPF650N80Z
DISTI # FCPF650N80Z		ON SemiconductorTrans MOSFET N-CH 800V 8A 3-Pin TO-220F Tube - Bulk (Alt: FCPF650N80Z)
Min Qty: 264
Container: Bulk		Americas - 0
  • 2640:$1.0900
  • 264:$1.1900
  • 528:$1.1900
  • 792:$1.1900
  • 1320:$1.1900
FCPF650N80Z
DISTI # FCPF650N80Z		ON SemiconductorTrans MOSFET N-CH 800V 8A 3-Pin TO-220F Tube (Alt: FCPF650N80Z)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€0.8099
  • 500:€0.8399
  • 100:€0.8719
  • 50:€0.9069
  • 25:€0.9449
  • 10:€1.0299
  • 1:€1.1339
FCPF650N80Z
DISTI # 512-FCPF650N80Z		ON SemiconductorMOSFET SF2 800V 650MOHM E TO220F
RoHS: Compliant		984
  • 1:$1.9100
  • 10:$1.6300
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9450
  • 2000:$0.8800
  • 5000:$0.8470
FCPF650N80ZFairchild Semiconductor CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Compliant		9654
  • 1000:$0.9500
  • 500:$1.0000
  • 100:$1.0400
  • 25:$1.0800
  • 1:$1.1700
FCPF650N80Z
DISTI # 8647929P		ON SemiconductorMOSFET N-CH 800V 8A SUPERFET II TO220F, TU740
  • 100:£1.2340
  • 50:£1.5440
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OMO.#: OMO-X-NUCLEO-LPM01A

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INA240A2QDRQ1

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OMO.#: OMO-INA240A2QDRQ1-TEXAS-INSTRUMENTS

 WIDE CM BI-DIR CURRENT SHUNT MON
AC0603FR-13100RL

Mfr.#: AC0603FR-13100RL

OMO.#: OMO-AC0603FR-13100RL-1190

 YAGAC0603FR-13100RL - Tape and Reel (Alt: AC0603FR-13100RL)
X-NUCLEO-LPM01A

Mfr.#: X-NUCLEO-LPM01A

OMO.#: OMO-X-NUCLEO-LPM01A-STMICROELECTRONICS

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INA181A1IDBVR

Mfr.#: INA181A1IDBVR

OMO.#: OMO-INA181A1IDBVR-TEXAS-INSTRUMENTS

 INA181A1IDBVR
可用性
庫存:
984
訂購:
2967
輸入數量:
FCPF650N80Z的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.91
US$1.91
10
US$1.63
US$16.30
100
US$1.30
US$130.00
500
US$1.14
US$570.00
1000
US$0.94
US$945.00
2000
US$0.88
US$1 760.00
5000
US$0.85
US$4 235.00
10000
US$0.82
US$8 150.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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