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SIHB12N50C-E3

SIHB12N50C-E3
Mfr. #:
SIHB12N50C-E3
製造商:
Vishay / Siliconix
描述:
MOSFET N-Channel 500V
生命週期:
製造商新產品
數據表:
SIHB12N50C-E3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N50C-E3 DatasheetSIHB12N50C-E3 Datasheet (P4-P6)SIHB12N50C-E3 Datasheet (P7-P9)SIHB12N50C-E3 Datasheet (P10)
ECAD Model:
更多信息:
SIHB12N50C-E3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
560 V
Id - 連續漏極電流：
12 A
Rds On - 漏源電阻：
555 mOhms
Vgs th - 柵源閾值電壓：
5 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
32 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
208 W
配置：
單身的
頻道模式：
增強
打包：
大部分
品牌：
威世 / Siliconix
秋季時間：
6 ns
產品類別：
MOSFET
上升時間：
35 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
23 ns
典型的開啟延遲時間：
18 ns
單位重量：
0.050717 oz
Tags
SIHB12N5, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIHB12N50C-E3 N-channel MOSFET Transistor; 12 A; 500 V; 3-Pin D2PAK
***et
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
*** Europe
N-CH SINGLE 500V TO263
SiHx12N50C-E3 500V N-Channel Power MOSFETs
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.Learn More
型號 製造商 描述 庫存 價格
SIHB12N50C-E3
DISTI # SIHB12N50C-E3-ND		Vishay SiliconixMOSFET N-CH 500V 12A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.9106
SIHB12N50C-E3
DISTI # SIHB12N50C-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N50C-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.6900
  • 2000:$2.5900
  • 4000:$2.4900
  • 6000:$2.3900
  • 10000:$2.3900
SIHB12N50C-E3
DISTI # 70616559		Vishay SiliconixSIHB12N50C-E3 N-channel MOSFET Transistor,12 A,500 V,3-Pin D2PAK
RoHS: Compliant		0
  • 100:$3.2400
  • 250:$2.7400
  • 500:$2.5400
  • 1000:$2.3700
SIHB12N50C-E3
DISTI # 781-SIHB12N50C-E3		Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		1000
  • 1:$5.3000
  • 10:$4.3900
  • 100:$3.6100
  • 250:$3.5000
  • 500:$3.1400
  • 1000:$2.6500
  • 2000:$2.5200
SIHB12N50C-E3Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		Americas -
    圖片 型號 描述
    SIHB12N50E-GE3

    Mfr.#: SIHB12N50E-GE3

    OMO.#: OMO-SIHB12N50E-GE3

    		 MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N60E-GE3

    Mfr.#: SIHB12N60E-GE3

    OMO.#: OMO-SIHB12N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N65E-GE3

    Mfr.#: SIHB12N65E-GE3

    OMO.#: OMO-SIHB12N65E-GE3-VISHAY

    		 IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
    SIHB12N50C-E3

    Mfr.#: SIHB12N50C-E3

    OMO.#: OMO-SIHB12N50C-E3-VISHAY

    		 IGBT Transistors MOSFET N-Channel 500V
    SIHB12N50E-GE3

    Mfr.#: SIHB12N50E-GE3

    OMO.#: OMO-SIHB12N50E-GE3-VISHAY

    		 IGBT Transistors MOSFET N-Channel 500V
    SIHB12N50C

    Mfr.#: SIHB12N50C

    OMO.#: OMO-SIHB12N50C-1190

    		 全新原裝
    SIHB12N60E

    Mfr.#: SIHB12N60E

    OMO.#: OMO-SIHB12N60E-1190

    		 全新原裝
    SIHB12N60EGE3

    Mfr.#: SIHB12N60EGE3

    OMO.#: OMO-SIHB12N60EGE3-1190

    		 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB120N60E-GE3

    Mfr.#: SIHB120N60E-GE3

    OMO.#: OMO-SIHB120N60E-GE3-VISHAY

    		 MOSFET N-CHAN 650V D2PAK (TO-263
    SIHB12N60ET1-GE3

    Mfr.#: SIHB12N60ET1-GE3

    OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY

    		 MOSFET N-CH 600V 12A TO263
    可用性
    庫存:
    Available
    訂購:
    3000
    輸入數量:
    SIHB12N50C-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1000
    US$2.64
    US$2 640.00
    2000
    US$2.51
    US$5 020.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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