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SI3430DV-T1-E3

SI3430DV-T1-E3
Mfr. #:
SI3430DV-T1-E3
製造商:
Vishay
描述:
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
生命週期:
製造商新產品
數據表:
SI3430DV-T1-E3 數據表
交貨:
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ECAD Model:
更多信息:
SI3430DV-T1-E3 更多信息
產品屬性
屬性值
製造商
威世矽
產品分類
FET - 單
系列
-
打包
Digi-ReelR 替代包裝
部分別名
SI3430DV-E3
單位重量
0.000705 oz
安裝方式
貼片/貼片
包裝盒
SOT-23-6 Thin, TSOT-23-6
技術
矽
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
通道數
1 Channel
供應商-設備-包
6-TSOP
配置
單身的
FET型
MOSFET N 溝道，金屬氧化物
最大功率
1.14W
晶體管型
1 N-Channel
漏源電壓 Vdss
100V
輸入電容-Ciss-Vds
-
FET-Feature
標準
Current-Continuous-Drain-Id-25°C
1.8A (Ta)
Rds-On-Max-Id-Vgs
170 mOhm @ 2.4A, 10V
Vgs-th-Max-Id
2V @ 250μA (Min)
柵極電荷-Qg-Vgs
6.6nC @ 10V
鈀功耗
1.14 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
11 ns
上升時間
11 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
2.4 A
Vds-漏-源-擊穿電壓
100 V
Rds-On-Drain-Source-Resistance
170 mOhms
晶體管極性
N通道
典型關斷延遲時間
16 ns
典型開啟延遲時間
9 ns
通道模式
增強
Tags
SI3430, SI343, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6
***et Europe
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
***Components
MOSFET N-Channel 100V 1.8A TSOP6
***i-Key
MOSFET N-CH 100V 1.8A 6-TSOP
***ronik
N-CHANNEL-FET 2,4A 100V TSOP-6 RoHSconf
***ser
N-Channel MOSFETs 100V 8A 2W
***ponent Sense
MOSFET 100V 8A 2W
***ied Electronics & Automation
TRANSITOR, SI2323DS
***
100V, 170 MOHMS@10V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.14W; No. Of Pins:6Pins Rohs Compliant: No
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型號 製造商 描述 庫存 價格
SI3430DV-T1-E3
DISTI # V72:2272_07433160		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
RoHS: Compliant		49
  • 25:$0.8309
  • 10:$0.8590
  • 1:$0.9585
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4500
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3430DV-T1-E3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 61
  • 1:$0.8579
  • 30:$0.8069
  • 75:$0.8049
  • 150:$0.7699
  • 375:$0.6689
  • 750:$0.5459
  • 1500:$0.5439
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.5239
  • 6000:$0.5079
  • 12000:$0.4869
  • 18000:$0.4739
  • 30000:$0.4609
SI3430DV-T1-E3
DISTI # 06J7594		Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W , RoHS Compliant: Yes0
  • 1:$1.2100
  • 10:$1.0700
  • 25:$0.9980
  • 50:$0.9230
  • 100:$0.8480
  • 500:$0.6570
  • 1000:$0.5190
SI3430DV-T1-E3
DISTI # 65K1923		Vishay IntertechnologiesN CHANNEL MOSFET, 100V, 1.8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):185mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes0
  • 1:$0.4700
  • 3000:$0.4700
SI3430DV-T1-E3.
DISTI # 15AC0293		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W,No. of Pins:6Pins , RoHS Compliant: No0
  • 1:$0.4700
  • 3000:$0.4700
SI3430DV-T1-E3
DISTI # 781-SI3430DV-E3		Vishay IntertechnologiesMOSFET 100V 8A 2W
RoHS: Compliant		360
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7940
  • 500:$0.6820
  • 1000:$0.6000
  • 3000:$0.5990
SI3430DV-T1
DISTI # 781-SI3430DV		Vishay IntertechnologiesMOSFET 100V 8A 2W
RoHS: Not compliant		0
    SI3430DV-T1-E3Vishay Intertechnologies1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET16
    • 5:$1.0820
    • 1:$1.3525
    SI3430DV-T1-E3Vishay Intertechnologies1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET292
    • 81:$0.4500
    • 18:$0.7500
    • 1:$1.5000
    SI3430DV-T1-E3Vishay BLH 365
    • 5:$1.1250
    • 19:$0.7313
    • 70:$0.4219
    • 239:$0.3600
    SI3430DV-T1-E3.Vishay IntertechnologiesMOSFET 100V 8A 2W
    RoHS: Compliant    		Americas - 530
    • 10:$0.7040
    SI3430DV-T1-E3Vishay IntertechnologiesMOSFET 100V 8A 2W
    RoHS: Compliant    		Americas - Stock
      SI3430DV-T1-E3
      DISTI # C1S803600844371      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		49
      • 25:$0.8309
      • 10:$0.8590
      圖片 型號 描述
      SI3430DV-T1-GE3

      Mfr.#: SI3430DV-T1-GE3

      OMO.#: OMO-SI3430DV-T1-GE3

      		 MOSFET 100V 2.4A 2.0W 170mohm @ 10V
      SI3430DV-T1-E3

      Mfr.#: SI3430DV-T1-E3

      OMO.#: OMO-SI3430DV-T1-E3

      		 MOSFET 100V, 170 MOHMS@10V
      SI3430DV-T1-GE3

      Mfr.#: SI3430DV-T1-GE3

      OMO.#: OMO-SI3430DV-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
      SI3430DV

      Mfr.#: SI3430DV

      OMO.#: OMO-SI3430DV-1190

      		 全新原裝
      SI3430DV-T1-E3

      Mfr.#: SI3430DV-T1-E3

      OMO.#: OMO-SI3430DV-T1-E3-VISHAY

      		 Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
      可用性
      庫存:
      Available
      訂購:
      4000
      輸入數量:
      SI3430DV-T1-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$0.54
      US$0.54
      10
      US$0.51
      US$5.13
      100
      US$0.49
      US$48.60
      500
      US$0.46
      US$229.50
      1000
      US$0.43
      US$432.00
      從...開始
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