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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SI5468DC-T1-GE3 DISTI # SI5468DC-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 6A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 6099In Stock |
|
| SI5468DC-T1-GE3 DISTI # SI5468DC-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 6A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 6099In Stock |
|
| SI5468DC-T1-GE3 DISTI # SI5468DC-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 6A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 3000In Stock |
|
| SI5468DC-T1-GE3 DISTI # SI5468DC-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5468DC-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI5468DC-T1-GE3 DISTI # SI5468DC-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6A 8-Pin Chip FET T/R (Alt: SI5468DC-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SI5468DC-T1-GE3. DISTI # 30AC0176 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:5.7W,No. of Pins:8Pins RoHS Compliant: No | 0 |
|
| SI5468DC-T1-GE3 DISTI # 70616984 | Vishay Siliconix | MOSFET N-CH 30V 6A 1206-8 RoHS: Compliant | 0 |
|
| SI5468DC-T1-GE3 DISTI # 781-SI5468DC-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant | 5723 |
|
| SI5468DC-T1-GE3 DISTI # 8181324P | Vishay Intertechnologies | TRANS MOSFET N-CH 30V 6A, RL | 1420 |
|
| SI5468DC-T1-GE3 DISTI # TMOSP10733 | Vishay Intertechnologies | N-CH 30V 6A 28mOhm 1206-ChipFET RoHS: Compliant | Stock DE - 0Stock HK - 0Stock US - 0 |
|
| SI5468DCT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 | |
| SI5468DC-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant | Americas - 3000 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: SI5411EDU-T1-GE3 OMO.#: OMO-SI5411EDU-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SI5419DU-GE3 |
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Mfr.#: SI5476DU-T1-E3 OMO.#: OMO-SI5476DU-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI5476DU-GE3 |
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Mfr.#: SI5406DC-T1-E3 OMO.#: OMO-SI5406DC-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 |
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Mfr.#: SI5433BDC-T1-E3 OMO.#: OMO-SI5433BDC-T1-E3-VISHAY |
IGBT Transistors MOSFET 20V 6.7A 2.5W |
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Mfr.#: SI5402DC-T1-E3 OMO.#: OMO-SI5402DC-T1-E3-VISHAY |
MOSFET N-CH 30V 4.9A 1206-8 |
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Mfr.#: SI5404DC-T1-E3 SOT163- |
全新原裝 |
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Mfr.#: SI54090-A01AGT OMO.#: OMO-SI54090-A01AGT-1190 |
全新原裝 |
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Mfr.#: SI5465ECD-T1-E3 OMO.#: OMO-SI5465ECD-T1-E3-1190 |
全新原裝 |
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Mfr.#: SI5499DCT1E3 OMO.#: OMO-SI5499DCT1E3-1190 |
Power Field-Effect Transistor, 2.1A I(D), 8V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI5415AEDU-T1-GE3 OMO.#: OMO-SI5415AEDU-T1-GE3-VISHAY |
Trans MOSFET P-CH 20V 15A 8-Pin PowerPAK ChipFET T/R |