IPB026N06NATMA1

IPB026N06NATMA1
Mfr. #:
IPB026N06NATMA1
製造商:
Infineon Technologies
描述:
Darlington Transistors MOSFET N-Ch 60V 100A D2PAK-2
生命週期:
製造商新產品
數據表:
IPB026N06NATMA1 數據表
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ECAD Model:
更多信息:
IPB026N06NATMA1 更多信息
產品屬性
屬性值
製造商
英飛凌科技
產品分類
晶體管 - FET、MOSFET - 單
系列
IPB026N06
打包
捲軸
部分別名
IPB026N06N IPB026N06NXT SP000962142
單位重量
0.139332 oz
安裝方式
貼片/貼片
商品名
優化MOS
包裝盒
TO-263-3
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
136 W
最高工作溫度
+ 175 C
最低工作溫度
- 55 C
秋季時間
8 ns
上升時間
15 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
100 A
Vds-漏-源-擊穿電壓
60 V
VGS-th-Gate-Source-Threshold-Voltage
2.8 V
Rds-On-Drain-Source-Resistance
2.6 mOhms
晶體管極性
N通道
典型關斷延遲時間
30 ns
典型開啟延遲時間
17 ns
Qg-門電荷
56 nC
正向跨導最小值
160 S
Tags
IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK Infineon IPB026N06NATMA1
***et Europe
Trans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R
***ark
MOSFET, N-CH, 60V, 100A, TO-263-3
***ical
Trans MOSFET N-CH 60V 100A
***i-Key
MOSFET N-CH 60V 25A TO263-3
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:136W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CANALE N 60V 100A TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
型號 製造商 描述 庫存 價格
IPB026N06NATMA1
DISTI # V72:2272_06382953
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
  • 1:$2.0280
IPB026N06NATMA1
DISTI # IPB026N06NATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
957In Stock
  • 500:$1.6853
  • 100:$2.1669
  • 10:$2.6970
  • 1:$2.9900
IPB026N06NATMA1
DISTI # IPB026N06NATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
957In Stock
  • 500:$1.6853
  • 100:$2.1669
  • 10:$2.6970
  • 1:$2.9900
IPB026N06NATMA1
DISTI # IPB026N06NATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.3558
IPB026N06NATMA1
DISTI # 31066474
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
450
  • 12:$1.3607
IPB026N06NATMA1
DISTI # 27065521
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
  • 7:$2.0280
IPB026N06NATMA1
DISTI # IPB026N06NATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB026N06NATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.9789
  • 2000:$0.9439
  • 4000:$0.9099
  • 6000:$0.8789
  • 10000:$0.8639
IPB026N06NATMA1
DISTI # SP000962142
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R (Alt: SP000962142)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.2459
  • 2000:€0.9679
  • 4000:€0.8989
  • 6000:€0.8709
  • 10000:€0.8369
IPB026N06NATMA1
DISTI # 50Y2002
Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 60 V, 0.0023 ohm, 10 V, 2.8 V RoHS Compliant: Yes657
  • 1:$2.5100
  • 10:$2.1300
  • 25:$1.9900
  • 50:$1.8400
  • 100:$1.7000
  • 250:$1.6000
  • 500:$1.4900
IPB026N06NATMA1
DISTI # 726-IPB026N06NATMA1
Infineon Technologies AGMOSFET N-Ch 60V 100A D2PAK-2
RoHS: Compliant
864
  • 1:$2.5100
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
IPB026N06N
DISTI # 726-IPB026N06N
Infineon Technologies AGMOSFET N-Ch 60V 100A D2PAK-2
RoHS: Compliant
482
  • 1:$2.5100
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
IPB026N06NATMA1
DISTI # 9062883P
Infineon Technologies AGMOSFET N-CHANNEL 60V 100A OPTIMOS TO263, RL975
  • 15:£1.5480
  • 50:£1.3860
  • 100:£1.2240
  • 250:£1.2000
IPB026N06NATMA1
DISTI # IPB026N06NATMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,100A,136W,PG-TO263-328
  • 1:$1.9215
  • 5:$1.6504
  • 25:$1.3299
  • 100:$1.1594
  • 1000:$1.0741
IPB026N06NATMA1
DISTI # C1S322000654323
Infineon Technologies AGMOSFETs
RoHS: Compliant
360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
IPB026N06NATMA1
DISTI # 2480797
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant
657
  • 1:£1.9600
  • 10:£1.4000
  • 100:£1.2300
  • 250:£1.2100
  • 500:£1.0400
IPB026N06NATMA1
DISTI # 2480797
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant
657
  • 1:$3.9700
  • 10:$3.3800
  • 100:$2.6900
  • 500:$2.3700
  • 1000:$1.9700
IPB026N06NATMA1
DISTI # 2480797RL
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant
0
  • 1:$3.9700
  • 10:$3.3800
  • 100:$2.6900
  • 500:$2.3700
  • 1000:$1.9700
圖片 型號 描述
IPB026N06NATMA1

Mfr.#: IPB026N06NATMA1

OMO.#: OMO-IPB026N06NATMA1

MOSFET N-Ch 60V 100A D2PAK-2
IPB026N06N

Mfr.#: IPB026N06N

OMO.#: OMO-IPB026N06N

MOSFET N-Ch 60V 100A D2PAK-2
IPB026N06N

Mfr.#: IPB026N06N

OMO.#: OMO-IPB026N06N-1190

MOSFET N-Ch 60V 100A D2PAK-2
IPB026N06NATMA1

Mfr.#: IPB026N06NATMA1

OMO.#: OMO-IPB026N06NATMA1-INFINEON-TECHNOLOGIES

Darlington Transistors MOSFET N-Ch 60V 100A D2PAK-2
可用性
庫存:
Available
訂購:
2000
輸入數量:
IPB026N06NATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$1.30
US$1.30
10
US$1.23
US$12.31
100
US$1.17
US$116.63
500
US$1.10
US$550.75
1000
US$1.04
US$1 036.70
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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