IPB027N10N5ATMA1

Mfr. #:: IPB027N10N5ATMA1
製造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET N-Ch 100V 120A D2PAK-2
生命週期:: 製造商新產品
數據表:: IPB027N10N5ATMA1 數據表
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更多信息:: IPB027N10N5ATMA1 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

打包: 捲軸

部分別名: IPB027N10N5 SP001227034

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-263-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 250 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 17 ns

上升時間: 15 ns

VGS-柵極-源極-電壓: +/- 20 V

Id 連續漏極電流: 120 A

Vds-漏-源-擊穿電壓: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 2.2 V

Rds-On-Drain-Source-Resistance: 3.5 mOhms

晶體管極性: N通道

典型關斷延遲時間: 52 ns

典型開啟延遲時間: 26 ns

Qg-門電荷: 112 nC

正向跨導最小值: 102 S

通道模式: 增強

Tags: IPB027N10N5, IPB027, IPB02, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB027N10N5ATMA1 描述

***ical: Trans MOSFET N-CH 100V 166A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: Single N-Channel 100 V 2.7 mOhm 142 nC OptiMOS5 Power Mosfet - D2PAK-3

***ark: Mosfet, N-Ch, 100V, 166A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0024Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPB027N10N5ATMA1 更多信息

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Light Electric Vehicles (LEV): Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.

Market price

型號	製造商	描述	庫存	價格
IPB027N10N5ATMA1 DISTI # IPB027N10N5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 120A D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	414In Stock	500:$3.1749 100:$3.9209 10:$4.7820 1:$5.3600
IPB027N10N5ATMA1 DISTI # IPB027N10N5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 120A D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	414In Stock	500:$3.1749 100:$3.9209 10:$4.7820 1:$5.3600
IPB027N10N5ATMA1 DISTI # IPB027N10N5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 120A D2PAK-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$2.5997
IPB027N10N5ATMA1 DISTI # IPB027N10N5	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: IPB027N10N5) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 1000	1000:$2.8135 2000:$2.7227 3000:$2.6377 5000:$2.5577 10000:$2.5196 25000:$2.4825 50000:$2.4465
IPB027N10N5ATMA1 DISTI # IPB027N10N5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N5ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.3900 2000:$2.2900 4000:$2.1900 6000:$2.0900 10000:$2.0900
IPB027N10N5ATMA1 DISTI # SP001227034	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001227034) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€2.1900 2000:€2.1900 4000:€2.0900 6000:€1.8900 10000:€1.7900
IPB027N10N5ATMA1 DISTI # 34AC1652	Infineon Technologies AG	MOSFET, N-CH, 100V, 166A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:166A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	92	500:$2.8100 250:$3.1300 100:$3.3000 50:$3.4700 25:$3.6300 10:$3.8000 1:$4.4700
IPB027N10N5ATMA1	Infineon Technologies AG	Single N-Channel 100 V 2.7 mOhm 142 nC OptiMOS5 Power Mosfet - D2PAK-3 RoHS: Not Compliant	30Cut Tape/Mini-Reel	1:$3.2500 50:$2.7900 100:$2.7100 250:$2.6200 500:$2.4800
IPB027N10N5ATMA1 DISTI # 726-IPB027N10N5ATMA1	Infineon Technologies AG	MOSFET N-Ch 100V 120A D2PAK-2 RoHS: Compliant	290	1:$4.4600 10:$3.7900 100:$3.2900 250:$3.1200 500:$2.8000 1000:$2.3600 2000:$2.2400
IPB027N10N5ATMA1 DISTI # 2781065	Infineon Technologies AG	MOSFET, N-CH, 100V, 166A, TO-263 RoHS: Compliant	298	500:£2.1800 250:£2.4400 100:£2.5700 10:£2.9600 1:£3.8900
IPB027N10N5ATMA1 DISTI # 2781065	Infineon Technologies AG	MOSFET, N-CH, 100V, 166A, TO-263 RoHS: Compliant	92	1000:$3.5300 500:$3.7100 250:$3.9100 100:$4.1400 10:$4.6800 1:$5.0000

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