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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SQJ942EP-T1_GE3 DISTI # SQJ942EP-T1_GE3 | Vishay Intertechnologies | Dual N-Channel MOSFETs in 5 mm x 6 mm PowerPAK, 40 V, 11 mΩ / 22 mΩ - Tape and Reel (Alt: SQJ942EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SQJ942EP-T1_GE3 DISTI # SQJ942EP-T1-GE3 | Vishay Intertechnologies | Dual N-Channel MOSFETs in 5 mm x 6 mm PowerPAK, 40 V, 11 mΩ / 22 mΩ (Alt: SQJ942EP-T1-GE3) RoHS: Compliant Min Qty: 3000 | Europe - 0 |
|
| SQJ942EP-T1_GE3 DISTI # 78-SQJ942EP-T1_GE3 | Vishay Intertechnologies | MOSFET 40V 15A AEC-Q101 Qualified RoHS: Compliant | 0 |
|
| SQJ942EP-T1-GE3 DISTI # 78-SQJ942EP-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SQJ942EP-T1_GE3 RoHS: Compliant | 0 | |
| SQJ942EP-T1_GE3 | Vishay Intertechnologies | 2300 | ||
| SQJ942EPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 15A I(D), 40V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 |
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: SQJ942EP-T1_GE3 OMO.#: OMO-SQJ942EP-T1-GE3-35F |
MOSFET 40V 15A AEC-Q101 Qualified |
|
|
Mfr.#: SQJ942EP-T1-GE3 OMO.#: OMO-SQJ942EP-T1-GE3-74F |
MOSFET RECOMMENDED ALT 78-SQJ942EP-T1_GE3 |
|
Mfr.#: SQJ942EP-T1-GE3 OMO.#: OMO-SQJ942EP-T1-GE3-1190 |
MOSFET RECOMMENDED ALT 78-SQJ942EP-T1_GE3 |
|
|
Mfr.#: SQJ942EPT1GE3 OMO.#: OMO-SQJ942EPT1GE3-1190 |
Power Field-Effect Transistor, 15A I(D), 40V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |