DMN3016LSS-13

Mfr. #:: DMN3016LSS-13
製造商:: Diodes Incorporated
描述:: MOSFET 30V N-Ch Enh FET 20Vdss 1.5W
生命週期:: 製造商新產品
數據表:: DMN3016LSS-13 數據表
交貨:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: DMN3016LSS-13 Datasheet DMN3016LSS-13 Datasheet (P4-P6)
ECAD Model:

產品屬性
屬性值

製造商：: 二極管公司

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SO-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 10.3 A

Rds On - 漏源電阻：: 8 mOhms

Vgs th - 柵源閾值電壓：: 1.3 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 25.1 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 1.5 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

系列：: DMN3016

晶體管類型：: 1 N-Channel

品牌：: 二極管公司

正向跨導 - 最小值：: -

秋季時間：: 5.6 ns

產品類別：: MOSFET

上升時間：: 16.5 ns

出廠包裝數量：: 2500

子類別：: MOSFET

典型關斷延遲時間：: 26.1 ns

典型的開啟延遲時間：: 4.8 ns

單位重量：: 0.002610 oz

Tags: DMN3016LS, DMN3016, DMN301, DMN30, DMN3, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN3016LSS-13 描述

***ure Electronics: DMN3016LSS Series 30 V 10.3 A N-Channel Enhancement Mode Mosfet - SOIC-8

***et: Trans MOSFET N-CH 30V 10.3A 8-Pin SO T/R

***ark: Mosfet, N-Ch, 30V, 10.3A, Soic Rohs Compliant: Yes

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ark: MOSFET Transistor, P Channel, -12 A, -30 V, 10 mohm, -10 V, -1.8 V

***ure Electronics: Single P-Channel 30 V 19.7 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***nell: MOSFET,P CH,30V,12A,SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power D

***eco: Transistor MOSFET Negative Channel 30 Volt 13A 8-Pin SOIC T/R

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.011Ohm;ID 13A;SO-8;PD 2.5W;VGS +/-20V;VF 1

***ure Electronics: Single N-Channel 30 V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

***ical: Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 7.3A, 10V 13A Ta -55°C~150°C TJ MOSFET N-CH 30V 13A 8-SOIC

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipat

***Yang: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ

***ure Electronics: N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8

***et Europe: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R

***nell: MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ure Electronics: Single P-Channel 30 V 11.9 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -12A, 11.9 MOHM, 25VGS, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ment14 APAC: MOSFET, P-CH, -30V, -12A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Source Voltage Vds:-30V; On Resistance

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***nell: MOSFET, P-CH, -30V, -12A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***Yang: Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***ure Electronics: N-Channel 30 V 10 mO Surface Mount PowerTrench® Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ

***et Europe: Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N CH, 30V, 11.6A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11.6A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***Yang: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ

***ure Electronics: N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8

***et Europe: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Market price

型號	製造商	描述	庫存	價格
DMN3016LSS-13 DISTI # V72:2272_06698171	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R RoHS: Compliant	24	10:$0.3834 1:$0.4673
DMN3016LSS-13 DISTI # DMN3016LSS-13DICT-ND	Diodes Incorporated	MOSFET N-CH 30V 10.3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2350In Stock	1000:$0.2177 500:$0.2817 100:$0.3841 10:$0.5120 1:$0.6100
DMN3016LSS-13 DISTI # DMN3016LSS-13DIDKR-ND	Diodes Incorporated	MOSFET N-CH 30V 10.3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2350In Stock	1000:$0.2177 500:$0.2817 100:$0.3841 10:$0.5120 1:$0.6100
DMN3016LSS-13 DISTI # DMN3016LSS-13DITR-ND	Diodes Incorporated	MOSFET N-CH 30V 10.3A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.1927
DMN3016LSS-13 DISTI # C1S205700494584	Diodes Incorporated	Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R RoHS: Compliant	24	10:$0.3834
DMN3016LSS-13 DISTI # C1S205700551065	Diodes Incorporated	Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R RoHS: Compliant	24	2500:$0.2153
DMN3016LSS-13 DISTI # DMN3016LSS-13	Diodes Incorporated	Trans MOSFET N-CH 30V 10.3A 8-Pin SO T/R - Tape and Reel (Alt: DMN3016LSS-13) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.1399 5000:$0.1329 10000:$0.1269 15000:$0.1209 25000:$0.1179
DMN3016LSS-13 DISTI # 621-DMN3016LSS-13	Diodes Incorporated	MOSFET 30V N-Ch Enh FET 20Vdss 1.5W RoHS: Compliant	4982	1:$0.5000 10:$0.4080 100:$0.2490 1000:$0.1930 2500:$0.1640

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