STGB6NC60HT4

STGB6NC60HT4
Mfr. #:
STGB6NC60HT4
製造商:
STMicroelectronics
描述:
IGBT Transistors PowerMESH TM IGBT
生命週期:
製造商新產品
數據表:
STGB6NC60HT4 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STGB6NC60HT4 DatasheetSTGB6NC60HT4 Datasheet (P4-P6)STGB6NC60HT4 Datasheet (P7-P9)STGB6NC60HT4 Datasheet (P10-P12)STGB6NC60HT4 Datasheet (P13-P14)
ECAD Model:
更多信息:
STGB6NC60HT4 更多信息 STGB6NC60HT4 Product Details
產品屬性
屬性值
製造商:
意法半導體
產品分類:
IGBT晶體管
RoHS:
Y
技術:
包裝/案例:
D2PAK-3
安裝方式:
貼片/貼片
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
600 V
集電極-發射極飽和電壓:
2.7 V
最大柵極發射極電壓:
20 V
Pd - 功耗:
80 W
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
系列:
STGB6NC60H
打包:
捲軸
連續集電極電流 Ic 最大值:
15 A
高度:
4.6 mm
長度:
10.4 mm
寬度:
9.35 mm
品牌:
意法半導體
連續集電極電流:
12 A
柵極-發射極漏電流:
100 nA
產品類別:
IGBT晶體管
出廠包裝數量:
1000
子類別:
IGBT
單位重量:
0.079014 oz
Tags
STGB6NC60H, STGB6N, STGB6, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) D2PAK T/R
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH TM IGBT
***r Electronics
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors PowerMESH TM IGBT
***nell
IGBT, SMD, 600V, 7A, D2-PAK; Transistor Type:PowerMESH; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.5V; Power Dissipation:56W; Case Style:D2-PAK; Termination Type:SMD; Current, Icm Pulsed:21A; No. of Pins:3; Time, Fall:76ns; Time, Rise:5ns
***ical
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
14 A, 600 V short-circuit rugged IGBT
*** Source Electronics
IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***(Formerly Allied Electronics)
IGBT, N-CHANNEL 600V 25A, D2PAK
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***nell
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;
***roFlash
Trans IGBT Chip N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel
***icroelectronics
New short circuit rugged "K" series
***nell
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 25A; Fall Time tf: 75ns; Pulsed Current Icm: 50A; Rise Time: 8.5ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: Power IGBT; Voltage Vces: 600V
*** Source Electronics
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 20A 65W D2PAK
***Parts
IGBTs - Single, Transistors N-Channel, D2PAK 20A 600V 65W Surface Mount
***nell
IGBT, SMD, 600V, 10A, D2-PAK; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 20A; Fall Time tf: 82ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 60W; Pulsed Current Icm: 30A; Rise Time: 6ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ical
Trans IGBT Chip N=-CH 600V 14A 83000mW 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***emi
IGBT, 600V, 7A, Short Circuit Rated
***el Electronic
IGBT Transistors 600V 7A NPT IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential.
***et
Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
***nell
IGBT, SINGLE, 600V, 10A, TO-263AB; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 73.5W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N=-CH 600V 40A 208000mW 3-Pin(2+Tab) D2PAK T/R
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,600V,20A,D2PAK; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:208W
型號 製造商 描述 庫存 價格
STGB6NC60HT4
DISTI # 497-5111-1-ND
STMicroelectronicsIGBT 600V 15A 56W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1474In Stock
  • 500:$1.1526
  • 100:$1.4029
  • 10:$1.7450
  • 1:$1.9400
STGB6NC60HT4
DISTI # 497-5111-6-ND
STMicroelectronicsIGBT 600V 15A 56W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1474In Stock
  • 500:$1.1526
  • 100:$1.4029
  • 10:$1.7450
  • 1:$1.9400
STGB6NC60HT4
DISTI # 497-5111-2-ND
STMicroelectronicsIGBT 600V 15A 56W D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 1000:$0.9272
STGB6NC60HT4
DISTI # STGB6NC60HT4
STMicroelectronicsTrans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) D2PAK T/R (Alt: STGB6NC60HT4)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
    STGB6NC60HT4
    DISTI # 511-STGB6NC60HT4
    STMicroelectronicsIGBT Transistors PowerMESH TM IGBT
    RoHS: Compliant
    0
      圖片 型號 描述
      STGB6NC60HDT4

      Mfr.#: STGB6NC60HDT4

      OMO.#: OMO-STGB6NC60HDT4

      IGBT Transistors PowerMESH TM IGBT
      STGB6NC60HD-1

      Mfr.#: STGB6NC60HD-1

      OMO.#: OMO-STGB6NC60HD-1

      IGBT Transistors N Ch 6A 600V
      STGB6NC60HT4

      Mfr.#: STGB6NC60HT4

      OMO.#: OMO-STGB6NC60HT4

      IGBT Transistors PowerMESH TM IGBT
      STGB6NC60HDT4

      Mfr.#: STGB6NC60HDT4

      OMO.#: OMO-STGB6NC60HDT4-STMICROELECTRONICS

      IGBT 600V 15A 56W D2PAK
      STGB6NC60

      Mfr.#: STGB6NC60

      OMO.#: OMO-STGB6NC60-1190

      全新原裝
      STGB6NC60HD

      Mfr.#: STGB6NC60HD

      OMO.#: OMO-STGB6NC60HD-1190

      全新原裝
      STGB6NC60HD-1

      Mfr.#: STGB6NC60HD-1

      OMO.#: OMO-STGB6NC60HD-1-STMICROELECTRONICS

      IGBT 600V 15A 56W I2PAK
      STGB6NC60HDT4,GB6NC60HD,

      Mfr.#: STGB6NC60HDT4,GB6NC60HD,

      OMO.#: OMO-STGB6NC60HDT4-GB6NC60HD--1190

      全新原裝
      STGB6NC60HDT4,GB6NC60HD,6NC60,6N60

      Mfr.#: STGB6NC60HDT4,GB6NC60HD,6NC60,6N60

      OMO.#: OMO-STGB6NC60HDT4-GB6NC60HD-6NC60-6N60-1190

      全新原裝
      STGB6NC60HT4

      Mfr.#: STGB6NC60HT4

      OMO.#: OMO-STGB6NC60HT4-STMICROELECTRONICS

      IGBT 600V 15A 56W D2PAK
      可用性
      庫存:
      Available
      訂購:
      2000
      輸入數量:
      STGB6NC60HT4的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      從...開始
      最新產品
      • MDmesh™ M6 Series 600 V Power MOSFETs
        STMicroelectronics’ MDmesh M6 series power MOSFETs in PowerFLAT 5 mm x 6 mm high voltage packages have reduced switching loss and low gate input resistance.
      • Compare STGB6NC60HT4
        STGB6NC60HD vs STGB6NC60HD1 vs STGB6NC60HDT4
      • LDCL015 Series
        STMicroelectronics' LDCL015 series are ultra-low drop, capless linear regulators with low noise and low current consumption.
      • VNI8200XP Monolithic 8-Channel Driver
        STMicroelectronics' monolithic octal driver IC has low supply current and integrated protection features that prevent against overload.
      • Ultra-Low Power Arm® Cortex®-M4 MCUs
        STMicroelectronics' ultra-low power Arm® Cortex®-M4 MCUs are available in low-pin-count-packages ranging from 32-pin LQFP to 64-pin BGA including 36-pin WLCSP.
      • LSM303C e-compass Accelerometer
        STMicroelectronics' LSM303C accelerometers are tiny which helps to save board space. Used for advanced navigation and motion sensitive applications.
      Top