FDMS7602S

Mfr. #:: FDMS7602S
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 30V Dual N-Channel PowerTrench
生命週期:: 製造商新產品
數據表:: FDMS7602S 數據表
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更多信息:: FDMS7602S 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: Power-56-8

通道數：: 2 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 30 A

Rds On - 漏源電阻：: 7.5 mOhms, 5 mOhms

Vgs th - 柵源閾值電壓：: 1.8 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 20 nC, 33 nC

Pd - 功耗：: 1 W

配置：: 雙重的

商品名：: PowerTrench 同步場效應晶體管

打包：: 捲軸

高度：: 0.8 mm

長度：: 6 mm

系列：: FDMS7602S

晶體管類型：: 2 N-Channel

寬度：: 5 mm

品牌：: 安森美半導體/飛兆半導體

正向跨導 - 最小值：: 63 S, 87 S

秋季時間：: 2.3 ns, 3.2 ns

產品類別：: MOSFET

上升時間：: 2.5 ns, 3.8 ns

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 20 ns, 27 ns

典型的開啟延遲時間：: 8.6 ns, 11 ns

單位重量：: 0.007443 oz

Tags: FDMS760, FDMS76, FDMS7, FDMS, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMS7602S 描述

***Yang: Transistor MOSFET Array Dual N-CH 30V 30A 8-Pin Power 56 T/R - Tape and Reel

***ment14 APAC: DUAL N CH MOSFET, POWERTRENCH, 30V, 30A,; DUAL N CH MOSFET, POWERTRENCH, 30V, 30A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:30A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0075ohm

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

***ure Electronics: Single N-Channel 30 V 6.6 mOhm 20 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ical: Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ark: MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curren

***emi: N-Channel Power Trench® MOSFET 30V, 26A, 5.5mΩ

***r Electronics: Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***nell: MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***ure Electronics: Single N-Channel 30 V 6.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC Tube

***icontronic: Small Signal Field-Effect Transistor, 17.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; On Resistance Rds(On):0.0047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes

*** Source Electronics: Trans MOSFET N-CH Si 30V 13.2A 8-Pin PQFN EP T/R / MOSFET N-CH 30V POWER56

***emi: N-Channel PowerTrench® MOSFET 30V, 9.5mΩ

***ure Electronics: Single N-Channel 30 V 14.5 mOhm 10 nC 2.5 W PowerTrench SMT Mosfet - POWER 56-8

***r Electronics: Power Field-Effect Transistor, 13.2A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.

***nell: MOSFET, N CH, 30V, 20A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0076ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:27W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***emi: N-Channel PowerTrench® MOSFET 30V, 19.5A, 5.3mΩ

***(Formerly Allied Electronics): Transistor, N-channel, PowerTrench MOSFET, 30V, 17.5A, 5.3mOhm, MLP8EP | ON Semiconductor FDMC7678

*** Stop Electro: Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***nell: MOSFET, N CH, 30V, 19.5A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDMS7602S 更多信息

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

FDMS36xxS Power Stage Dual Asymmetric MOSFETs: ON Semiconductor FDMS36xxS Power Stage Dual Asymmetric MOSFET modules provide the highest output current capability among all 5mm x 6mm dual MOSFET solutions on the market. The FDMS36xxS dual asymmetric MOSFETs incorporate a control and synchronous MOSFET as well as a monolithic Schottky body diode in a PQFN package. The switch node has been internally connected to allow enable easy placement and routing of synchronous buck converters. The control MOSFET and synchronous MOSFET have been designed to provide optimal power efficiency for output currents up to 30A. These ON Semiconductor devices achieve industry-leading sub-2mΩ low side rDS(on) at high performance computing rated breakdown voltages. FDMS36xxS MOSFETs are optimized to minimize the combination of conduction and switching losses from 300kHz to 600kHz, delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.Learn More

Market price

型號	製造商	描述	庫存	價格
FDMS7602S DISTI # 32873394	ON Semiconductor	DUAL N-CHANNEL POWER TRENCH MO	159000	3000:$0.4188
FDMS7602S DISTI # FDMS7602SCT-ND	ON Semiconductor	MOSFET 2N-CH 30V 12A/17A POWER56 Min Qty: 1 Container: Cut Tape (CT)	8510In Stock	1000:$0.5099 500:$0.6458 100:$0.7818 10:$1.0030 1:$1.1200
FDMS7602S DISTI # FDMS7602SDKR-ND	ON Semiconductor	MOSFET 2N-CH 30V 12A/17A POWER56 Min Qty: 1 Container: Digi-Reel®	8510In Stock	1000:$0.5099 500:$0.6458 100:$0.7818 10:$1.0030 1:$1.1200
FDMS7602S DISTI # FDMS7602STR-ND	ON Semiconductor	MOSFET 2N-CH 30V 12A/17A POWER56 Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	6000:$0.4389 3000:$0.4620
FDMS7602S DISTI # V72:2272_06338091	ON Semiconductor	DUAL N-CHANNEL POWER TRENCH MO	0
FDMS7602S DISTI # V36:1790_06338091	ON Semiconductor	DUAL N-CHANNEL POWER TRENCH MO	0	3000:$0.4390
FDMS7602S DISTI # FDMS7602S	ON Semiconductor	Trans MOSFET N-CH 30V 12A/17A 8-Pin Power 56 T/R (Alt: FDMS7602S) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	30000:$0.5690 18000:$0.5893 12000:$0.6111 6000:$0.6346 3000:$0.6600
FDMS7602S DISTI # FDMS7602S	ON Semiconductor	Trans MOSFET N-CH 30V 12A/17A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS7602S) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.4069 18000:$0.4169 12000:$0.4229 6000:$0.4279 3000:$0.4309
FDMS7602S DISTI # FDMS7602S	ON Semiconductor	Trans MOSFET N-CH 30V 12A/17A 8-Pin Power 56 T/R (Alt: FDMS7602S) Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.5812 18000:€0.6170 12000:€0.6458 6000:€0.6816 3000:€0.7175
FDMS7602S DISTI # 58T5427	ON Semiconductor	Trans MOSFET N-CH 30V 12A/17A 8-Pin Power 56 T/R - Product that comes on tape, but is not reeled (Alt: 58T5427) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.4074 500:$0.4125 100:$0.4177 50:$0.4231 25:$0.4258 10:$0.4286 1:$0.4314
FDMS7602S-T DISTI # FDMS7602S-T	ON Semiconductor	Trans MOSFET N-CH 30V12A@Q1/17A@Q2 8-Pin Power 56 T/R (Alt: FDMS7602S-T) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
FDMS7602S DISTI # 92R5557	ON Semiconductor	DUAL N CHANNEL MOSFET, POWERTRENCH, 30V, 30A, POWER56, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes RoHS: Compliant	0	30000:$0.4100 18000:$0.4170 12000:$0.4230 6000:$0.4280 3000:$0.4340 1:$0.4390
FDMS7602S DISTI # 512-FDMS7602S	ON Semiconductor	MOSFET 30V Dual N-Channel PowerTrench RoHS: Compliant	2783	1:$1.0800 10:$0.9240 100:$0.7100 500:$0.6280 1000:$0.4950 3000:$0.4390 9000:$0.4230
FDMS7602S	Fairchild Semiconductor Corporation	12 A, 30 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET	57	58:$0.9900 16:$1.3200 1:$1.9800
FDMS7602S DISTI # 2372264	ON Semiconductor	DUAL N CHANNEL MOSFET, POWERTRENCH, 30V, 30A, POWER56, FULL REEL RoHS: Compliant	0	18000:£0.3860 12000:£0.3890 6000:£0.3930 3000:£0.3990
FDMS7602S DISTI # 2372264	ON Semiconductor	DUAL N CHANNEL MOSFET, POWERTRENCH, 30V, 30A, POWER56, FULL REEL RoHS: Compliant	0	15000:$0.6090 6000:$0.6290 3000:$0.6620
FDMS7602S DISTI # 2009254	ON Semiconductor	DUAL N CHANNEL MOSFET, POWERTRENCH, 30V, RoHS: Compliant	2690	24000:$0.6180 9000:$0.6370 3000:$0.6620 1000:$0.7460 500:$0.9460 100:$1.0700 10:$1.3900 1:$1.6300

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