MMJT9410T1G

Mfr. #:: MMJT9410T1G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT 3A 30V 3W NPN
生命週期:: 製造商新產品
數據表:: MMJT9410T1G 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: SOT-223-4

晶體管極性：: NPN

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 30 V

集電極-基極電壓 VCBO：: 45 V

發射極基極電壓 VEBO：: 6 V

集電極-發射極飽和電壓：: 0.15 V

最大直流集電極電流：: 3 A

增益帶寬積 fT：: 72 MHz

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

高度：: 1.57 mm

長度：: 6.5 mm

打包：: 捲軸

寬度：: 3.5 mm

品牌：: 安森美半導體

連續集電極電流：: 1 A

DC 集電極/基極增益 hfe 最小值：: 85

Pd - 功耗：: 3 W

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 1000

子類別：: 晶體管

單位重量：: 0.003951 oz

Tags: MMJT9410T1, MMJT9410T, MMJT941, MMJT94, MMJT9, MMJT, MMJ

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MMJT9410T1G 描述

***S.I.T. Europe - USA - Asia: Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

***et: Trans GP BJT NPN 30V 3A 4-Pin(3+Tab) SOT-223 T/R

***ark: Bipolar Power Transistor; Transistor Polarity:N Channel; C-E Breakdown Voltage:30V; Collector Current:3A; DC Current Gain Max (hfe):200; Leaded Process Compatible:Yes; Package/Case:SOT-223; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes

***r Electronics: Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

***enic: 25V 2W 3A 100@1A2V 600mV@3A300mA NPN -55¡Í~+150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS

***ical: Trans GP BJT NPN 25V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R

***rchild Semiconductor: These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.

***ark: BIPOLAR TRANSISTOR, NPN, 25V; Transistor Polarity:NPN; Collector Emitter Voltage Max:25V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:150MHz RoHS Compliant: Yes

***nell: TRANSISTOR, BIPOL, NPN, 25V, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 2W; DC Collector Current: 3A; DC Current Gain hFE: 15hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

*** Stop Electro: Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

***C: Trans GP BJT NPN 25V 3A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 25V 3A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 25V 3A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 25V 3A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 25V 3A 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: FZT649 Series NPN 3 A 25 V SMT Silicon High Performance Transistor - SOT-223

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

***ure Electronics: FZT489 Series NPN 1 A 30 V Silicon Planar Medium Power Transistor - SOT-223

***C: Trans GP BJT NPN 30V 1A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 30V 1A 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: FZT649 Series 25 V 3 A 2 W NPN High Performance SMT Transistor - SOT-223

***el Electronic: Trans GP BJT NPN 25V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R

***des Inc SCT: NPN, 25V, 3A, SOT223, 240MHz

***ure Electronics: PZTA14 Series 30 V CE Breakdown 1.2 A NPN Darlington Transistor - SOT-223

***r Electronics: Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

***Yang: Trans Darlington NPN 30V 1.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***enic: 1W 1.2A 10000@10mA5V 125MHz 1.5V@100mA100Ã×A NPN -55¡Í~+150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS

***ment14 APAC: Transistor, NPN, 30V, 1.2A, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power

***rchild Semiconductor: NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.

***nell: TRANSISTOR, NPN, 30V, 1.2A, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 1W; DC Collector Current: 1.2A; DC Current Gain hFE: 10000hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ark: TRANSISTOR,BJT,NPN,30V V(BR)CEO,2A I(C),SOT-223

***emi: NPN General Purpose Amplifier

***inecomponents.com: SOT-223 MED PWR TRANSISTOR

***i-Key Marketplace: TRANS NPN 30V 2A SOT223-4

***rchild Semiconductor: NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37.

***el Nordic: Contact for details

Market price

型號	製造商	描述	庫存	價格
MMJT9410T1G DISTI # MMJT9410T1GOSTR-ND	ON Semiconductor	TRANS NPN 30V 3A SOT223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Limited Supply - Call
MMJT9410T1G DISTI # MMJT9410T1GOSCT-ND	ON Semiconductor	TRANS NPN 30V 3A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
MMJT9410T1G DISTI # MMJT9410T1GOSDKR-ND	ON Semiconductor	TRANS NPN 30V 3A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
MMJT9410T1G DISTI # MMJT9410T1G	ON Semiconductor	Trans GP BJT NPN 30V 3A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: MMJT9410T1G) RoHS: Compliant Min Qty: 1924 Container: Bulk	Americas - 0	19240:$0.1599 9620:$0.1639 5772:$0.1659 3848:$0.1679 1924:$0.1689
MMJT9410T1 DISTI # 863-MMJT9410T1	ON Semiconductor	Bipolar Transistors - BJT 3A 30V 3W NPN RoHS: Not compliant	0
MMJT9410T1G DISTI # 863-MMJT9410T1G	ON Semiconductor	Bipolar Transistors - BJT 3A 30V 3W NPN RoHS: Compliant	0
MMJT9410T1G	ON Semiconductor	Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Compliant	1	1000:$0.1700 500:$0.1800 100:$0.1900 25:$0.2000 1:$0.2100

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