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FGA3060ADF

FGA3060ADF
Mfr. #:
FGA3060ADF
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V proliferation PFC home application
生命週期:
製造商新產品
數據表:
FGA3060ADF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FGA3060ADF 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-3PN
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
1.8 V
最大柵極發射極電壓：
30 V
25 C 時的連續集電極電流：
60 A
Pd - 功耗：
176 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
系列：
FGA3060ADF
打包：
管子
連續集電極電流 Ic 最大值：
60 A
品牌：
安森美半導體/飛兆半導體
柵極-發射極漏電流：
400 nA
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
單位重量：
0.225789 oz
Tags
FGA30, FGA3, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 600V 60A 176000mW 3-Pin(3+Tab) TO-3PN Rail
***emi
IGBT, 600 V, 30 A Field Stop Trench
*** Electronic Components
IGBT Transistors 600V proliferation PFC home application
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
***ark
Fs3Tigbt To3Pn 20A 600V Rohs Compliant: Yes
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Vce(sat) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance. TO3P package provide Super Low thermal resistance for much wider SOA for system stability.
***ical
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
600 V, 30 A high speed trench gate field-stop IGBT
***nell
IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
STGP20NC60V Series 600 V 3 A Flange Mount Very Fast IGBT - TO-220
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***(Formerly Allied Electronics)
STGP20NC60V,IGBT N-ch 600V 30A,TO220-3
***ark
N CHANNEL IGBT, 60V, 60A, TO-220; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 60A, TO-220; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins
***ical
Trans IGBT Chip N-CH 600V 60A 235800mW 3-Pin(3+Tab) TO-247A Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ark
Igbt, High Speed, 600V, 60A, To-247A
***nell
IGBT, HIGH SPEED, 600V, 60A, TO-247A; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 235.8W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
***ure Electronics
IRG4PC40SPbF Series 600 V 31 A N-Channel Standard Speed IGBT - TO-220AC
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 940 ns Power dissipation: 160 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):1.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 60A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Current Temperature:25°C; Device Marking:IRG4PC40SPbF; Fall Time Max:380ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***el Electronic
In a Pack of 5, Infineon IRG4BC40SPBF IGBT, 60 A 600 V, 3-Pin TO-220AB
***ure Electronics
Insulated Gate Bipolar Transistor Through Hole IGBT - TO-220-3
***itex
Transistor; IGBT; 600V; 60A; 160W; -55+150 deg.C; THT; TO220
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 380 ns Power dissipation: 160 W
***nell
IGBT, 600V, 60A, TO-220AB-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.68V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
型號 製造商 描述 庫存 價格
FGA3060ADF
DISTI # V99:2348_14141228		ON SemiconductorFS3 600V PROLIFERATION FOR PFC450
  • 1000:$1.6640
  • 500:$1.9160
  • 250:$2.1570
  • 100:$2.2950
  • 10:$2.6700
  • 1:$3.4859
FGA3060ADF
DISTI # FGA3060ADF-ND		ON SemiconductorIGBT 600V 60A 176W TO-3PN
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$1.6556
FGA3060ADF
DISTI # 25887474		ON SemiconductorFS3 600V PROLIFERATION FOR PFC450
  • 4:$3.4859
FGA3060ADF
DISTI # FGA3060ADF		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA3060ADF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$0.9729
  • 2700:$0.9969
  • 1800:$1.0099
  • 900:$1.0229
  • 450:$1.0299
FGA3060ADF
DISTI # FGA3060ADF		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin TO-3PN Tube - Bulk (Alt: FGA3060ADF)
Min Qty: 187
Container: Bulk		Americas - 0
  • 935:$1.5900
  • 1870:$1.5900
  • 187:$1.6900
  • 374:$1.6900
  • 561:$1.6900
FGA3060ADF
DISTI # FGA3060ADF		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin TO-3PN Tube (Alt: FGA3060ADF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Asia - 0
  • 22500:$1.2925
  • 11250:$1.3140
  • 4500:$1.3593
  • 2250:$1.4079
  • 1350:$1.4600
  • 900:$1.5162
  • 450:$1.5768
FGA3060ADF
DISTI # FGA3060ADF		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin TO-3PN Tube (Alt: FGA3060ADF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.0589
  • 500:€1.0749
  • 100:€1.0919
  • 50:€1.1099
  • 25:€1.2219
  • 10:€1.4299
  • 1:€1.7479
FGA3060ADF
DISTI # 01AC8661		ON SemiconductorFS3TIGBT TO3PN 20A 600V / TUBE0
  • 500:$1.5700
  • 250:$1.6200
  • 100:$1.9400
  • 50:$2.2400
  • 25:$2.3800
  • 10:$2.7200
  • 1:$3.1400
FGA3060ADF.
DISTI # 23AC5250		Fairchild Semiconductor CorporationFS3TIGBT TO3PN 20A 600V ROHS COMPLIANT: YES0
  • 4500:$1.3900
  • 1:$1.4900
FGA3060ADF
DISTI # 512-FGA3060ADF		ON SemiconductorIGBT Transistors 600V proliferation PFC home application
RoHS: Compliant		637
  • 1:$3.1900
  • 10:$2.7100
  • 100:$2.3500
  • 250:$2.2300
  • 500:$2.0000
  • 1000:$1.6900
  • 2500:$1.6000
  • 5000:$1.5400
FGA3060ADFFairchild Semiconductor Corporation 
RoHS: Not Compliant		368
  • 1000:$1.1600
  • 500:$1.2200
  • 100:$1.2700
  • 25:$1.3200
  • 1:$1.4300
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 DIODE GEN PURP 600V 30A DO247
可用性
庫存:
637
訂購:
2620
輸入數量:
FGA3060ADF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$3.19
US$3.19
10
US$2.71
US$27.10
100
US$2.35
US$235.00
250
US$2.23
US$557.50
500
US$2.00
US$1 000.00
1000
US$1.69
US$1 690.00
2500
US$1.60
US$4 000.00
5000
US$1.54
US$7 700.00
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